CIRCUIT BOARD STRUCTURE HAVING ELECTRONIC COMPONENTS INTEGRATED THEREIN
    91.
    发明申请
    CIRCUIT BOARD STRUCTURE HAVING ELECTRONIC COMPONENTS INTEGRATED THEREIN 有权
    具有集成电子元件的电路板结构

    公开(公告)号:US20080165515A1

    公开(公告)日:2008-07-10

    申请号:US11970112

    申请日:2008-01-07

    Abstract: The present invention provides a circuit board having electronic components integrated therein, including a carrier board having an metallic oxide layer formed on each two surfaces of a metal layer, and having at least one through cavity; at least a semiconductor chip hold in the opening; at least a capacitor disposed on one surface of the carrier board, wherein the surface with the capacitor disposed thereon is at the same side with the active surface of the semiconductor chip. The capacitor is constituted of a first electrode plate disposed on partial surface of one side of the carrier board, a high dielectric material layer disposed on the surface of the first electrode plate, and a second electrode plate, paralleling and corresponding to the first electrode plate, disposed on the surface of the high dielectric material. The metal layer and the oxidation layer of the carrier board can enhance rigidity as well as tenacity and also integrate semiconductor chips and capacitors in the circuit board structure.

    Abstract translation: 本发明提供了一种集成有电子部件的电路板,包括:载体板,其具有在金属层的每两个表面上形成的金属氧化物层,并具有至少一个通孔; 至少一个半导体芯片保持在开口中; 至少设置在所述载板的一个表面上的电容器,其中设置有所述电容器的所述表面与所述半导体芯片的有源表面处于同一侧。 电容器由设置在载板的一侧的部分表面上的第一电极板,设置在第一电极板的表面上的高介电材料层和与第一电极板相对应的第二电极板 ,设置在高电介质材料的表面上。 载体板的金属层和氧化层可以提高刚性和强度,并且还将半导体芯片和电容器集成在电路板结构中。

    Method of manufacturing wiring board
    92.
    发明授权
    Method of manufacturing wiring board 有权
    制造布线板的方法

    公开(公告)号:US07375022B2

    公开(公告)日:2008-05-20

    申请号:US11317403

    申请日:2005-12-23

    Abstract: A method of manufacturing a wiring board is disclosed. The wiring board has: a capacitor, having multiple electrode layers which oppose each other with a dielectric layer in between, that is connected to a semiconductor chip; one or more via wirings which pierce the electrode layers and which are connected to the semiconductor chip, and pattern wirings connected to the via wirings. The method includes: forming the electrode layers, each having one or more through holes which the via wirings pierce, and the dielectric layer, and forming the capacitor; installing the capacitor such that the capacitor opposes the pattern wirings over an insulating layer; forming one or more via holes which reach the pattern wirings from the through holes; and forming the via wiring in the via hole.

    Abstract translation: 公开了一种制造布线板的方法。 布线板具有:电容器,具有多个彼此相对的电极层,中间具有介电层,并连接到半导体芯片; 一个或多个穿透电极层并且连接到半导体芯片的通孔布线以及连接到通孔布线的图案布线。 该方法包括:形成各自具有通孔布线穿过的一个或多个通孔的电极层和电介质层,并形成电容器; 安装电容器使得电容器与绝缘层上的图案布线相对; 形成从通孔到达图案布线的一个或多个通孔; 以及在通孔中形成通孔布线。

    Capacitor embedded printed circuit board and manufacturing method thereof
    93.
    发明申请
    Capacitor embedded printed circuit board and manufacturing method thereof 审中-公开
    电容器嵌入式印刷电路板及其制造方法

    公开(公告)号:US20080100986A1

    公开(公告)日:2008-05-01

    申请号:US11907563

    申请日:2007-10-15

    Abstract: Provided is a method of manufacturing a capacitor embedded printed circuit board. In the method, a laminated body is prepared, including a laminated plate having first and second copper films on both sides thereof, where at least one bottom electrode is provided on at least one side. A dielectric layer is formed on the at least one bottom electrode. A metal layer is formed on a top surface of the dielectric layer where a capacitor is to be formed. A conductive paste layer is formed on at least one region of a top surface of the metal layer, where the conductive paste layer and the metal layer is provided as a top electrode. An insulation resin layers are formed on both sides of the laminated plate, respectively. A conductive via is formed in the insulation resin layer such that it is connected to the conductive paste layer.

    Abstract translation: 提供一种制造电容器嵌入式印刷电路板的方法。 在该方法中,制备层压体,其包括其两侧具有第一和第二铜膜的层压板,其中在至少一侧上设置有至少一个底部电极。 在所述至少一个底部电极上形成介电层。 在要形成电容器的电介质层的顶表面上形成金属层。 在金属层的顶表面的至少一个区域上形成导电浆料层,其中导电浆料层和金属层设置为顶部电极。 绝缘树脂层分别形成在层压板的两侧。 导电通孔形成在绝缘树脂层中,使其与导电糊层连接。

    Capacitor built-in interposer and method of manufacturing the same and electronic component device
    94.
    发明申请
    Capacitor built-in interposer and method of manufacturing the same and electronic component device 失效
    电容器内置插入器及其制造方法和电子元器件

    公开(公告)号:US20080030968A1

    公开(公告)日:2008-02-07

    申请号:US11882646

    申请日:2007-08-03

    Inventor: Naohiro Mashino

    Abstract: A capacitor built-in interposer of the present invention, includes a base resin layer, a capacitor first electrode provided to pass through the base resin layer and having projection portions projected from both surface sides of the base resin layer respectively whereby the projection portion on one surface side of the base resin layer serves as a connection portion, a capacitor dielectric layer for covering the projection portion of the first electrode on other surface side of the base resin layer, and a capacitor second electrode for covering the dielectric layer, wherein a plurality of capacitors each constructed by the first electrode, the dielectric layer, and the second electrode are arranged and aligned in a lateral direction in a state that the capacitors are passed through the base resin layer.

    Abstract translation: 本发明的电容器内置插入件包括基底树脂层,设置成穿过基底树脂层并具有从基底树脂层的两个表面侧突出的突出部分的电容器第一电极,其中突出部分在一个 基础树脂层的表面侧用作连接部分,用于覆盖基础树脂层的另一表面侧上的第一电极的突出部分的电容器电介质层和用于覆盖电介质层的电容器第二电极,其中多个 每个由第一电极,电介质层和第二电极构成的电容器在电容器通过基础树脂层的状态下沿横向排列和排列。

    Semiconductor package, method of production of same, and semiconductor device
    96.
    发明授权
    Semiconductor package, method of production of same, and semiconductor device 有权
    半导体封装,其制造方法和半导体器件

    公开(公告)号:US07314780B2

    公开(公告)日:2008-01-01

    申请号:US11145924

    申请日:2005-06-07

    Abstract: A semiconductor package, provided with a multilayer interconnect structure, for mounting a semiconductor chip on its top surface, wherein a topmost stacked structure of the multilayer interconnect structure includes a capacitor structure, the capacitor structure having a dielectric layer comprised of a mixed electrodeposited layer of high dielectric constant inorganic filler and insulating resin and including chip connection pads for directly connecting top electrodes and bottom electrodes with electrodes of the semiconductor chip, whereby greater freedom in design of interconnect patterns can be secured, the degree of proximity of the capacitor and semiconductor chip can be greatly improved, and the package can be made smaller and lighter in weight, a method of production of the same, and a semiconductor device using this semiconductor package.

    Abstract translation: 一种半导体封装,其具有多层互连结构,用于将半导体芯片安装在其顶表面上,其中所述多层互连结构的最上层堆叠结构包括电容器结构,所述电容器结构具有介电层,所述电介质层由混合电沉积层 高介电常数无机填料和绝缘树脂,并且包括用于直接连接具有半导体芯片电极的顶电极和底电极的芯片连接焊盘,从而可以确保互连图案设计的更大自由度,电容器和半导体芯片的接近程度 可以大大改善,并且可以使包装重量更小更轻,其制造方法以及使用该半导体封装的半导体器件。

    Thin-film embedded capacitance, method for manufacturing thereof, and a printed wiring board
    97.
    发明授权
    Thin-film embedded capacitance, method for manufacturing thereof, and a printed wiring board 有权
    薄膜嵌入式电容,其制造方法以及印刷电路板

    公开(公告)号:US07310238B2

    公开(公告)日:2007-12-18

    申请号:US11498070

    申请日:2006-08-03

    Inventor: Kiyotaka Tsukada

    Abstract: The present invention provides a thin-film embedded capacitance having a substantial electrostatic capacity per unit area, and a method for manufacturing thereof.A thin film embedded capacitance comprising: a metallic thin-film for wiring made of a metallic material in a non-yield state; the first electrode formed on the film for wiring; a dielectric material layer formed on the first electrode and the film for wiring, at a temperature not lower than ordinary room temperature to lower than a yield temperature of the film for wiring, having a coefficient of thermal expansion lower than that the film for wiring; and the second electrode formed on the dielectric material layer, and a method for manufacturing thereof.

    Abstract translation: 本发明提供了具有每单位面积的显着静电容量的薄膜嵌入式电容及其制造方法。 一种薄膜嵌入式电容器,包括:用于非金属材料制成的布线的金属薄膜; 形成在用于布线的膜上的第一电极; 在不低于普通室温至低于布线用膜的屈服温度的温度下形成的第一电极和布线用电介质材料层,其热膨胀系数低于布线用膜; 和形成在电介质材料层上的第二电极及其制造方法。

    FLEXIBLE CIRCUIT HAVING OVERVOLTAGE PROTECTION
    100.
    发明申请
    FLEXIBLE CIRCUIT HAVING OVERVOLTAGE PROTECTION 有权
    具有过电压保护功能的柔性电路

    公开(公告)号:US20070146941A1

    公开(公告)日:2007-06-28

    申请号:US11679061

    申请日:2007-02-26

    Abstract: A first voltage variable material (“VVM”) includes an insulative binder, first conductive particles with a core and a shell held in the insulating binder and second conductive particles without a shell held in the insulating binder; a second VVM includes an insulating binder, first conductive particles with a core and a shell held in the insulating binder, second conductive particles without a shell held in the insulating binder, and semiconductive particles with a core and a shell held in the insulating binder; a third VVM includes only first conductive particles with a core and a shell held in the insulating binder.

    Abstract translation: 第一电压可变材料(“VVM”)包括绝缘粘合剂,具有芯和保持在绝缘粘合剂中的壳的第一导电颗粒和没有保持在绝缘粘合剂中的壳的第二导电颗粒; 第二VVM包括绝缘粘合剂,具有芯和保持在绝缘粘合剂中的壳的第一导电颗粒,没有保持在绝缘粘合剂中的壳的第二导电颗粒和保持在绝缘粘合剂中的芯和壳的半导体颗粒; 第三VVM仅包括具有芯和保持在绝缘粘合剂中的壳的第一导电颗粒。

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