Abstract:
The present invention provides a circuit board having electronic components integrated therein, including a carrier board having an metallic oxide layer formed on each two surfaces of a metal layer, and having at least one through cavity; at least a semiconductor chip hold in the opening; at least a capacitor disposed on one surface of the carrier board, wherein the surface with the capacitor disposed thereon is at the same side with the active surface of the semiconductor chip. The capacitor is constituted of a first electrode plate disposed on partial surface of one side of the carrier board, a high dielectric material layer disposed on the surface of the first electrode plate, and a second electrode plate, paralleling and corresponding to the first electrode plate, disposed on the surface of the high dielectric material. The metal layer and the oxidation layer of the carrier board can enhance rigidity as well as tenacity and also integrate semiconductor chips and capacitors in the circuit board structure.
Abstract:
A method of manufacturing a wiring board is disclosed. The wiring board has: a capacitor, having multiple electrode layers which oppose each other with a dielectric layer in between, that is connected to a semiconductor chip; one or more via wirings which pierce the electrode layers and which are connected to the semiconductor chip, and pattern wirings connected to the via wirings. The method includes: forming the electrode layers, each having one or more through holes which the via wirings pierce, and the dielectric layer, and forming the capacitor; installing the capacitor such that the capacitor opposes the pattern wirings over an insulating layer; forming one or more via holes which reach the pattern wirings from the through holes; and forming the via wiring in the via hole.
Abstract:
Provided is a method of manufacturing a capacitor embedded printed circuit board. In the method, a laminated body is prepared, including a laminated plate having first and second copper films on both sides thereof, where at least one bottom electrode is provided on at least one side. A dielectric layer is formed on the at least one bottom electrode. A metal layer is formed on a top surface of the dielectric layer where a capacitor is to be formed. A conductive paste layer is formed on at least one region of a top surface of the metal layer, where the conductive paste layer and the metal layer is provided as a top electrode. An insulation resin layers are formed on both sides of the laminated plate, respectively. A conductive via is formed in the insulation resin layer such that it is connected to the conductive paste layer.
Abstract:
A capacitor built-in interposer of the present invention, includes a base resin layer, a capacitor first electrode provided to pass through the base resin layer and having projection portions projected from both surface sides of the base resin layer respectively whereby the projection portion on one surface side of the base resin layer serves as a connection portion, a capacitor dielectric layer for covering the projection portion of the first electrode on other surface side of the base resin layer, and a capacitor second electrode for covering the dielectric layer, wherein a plurality of capacitors each constructed by the first electrode, the dielectric layer, and the second electrode are arranged and aligned in a lateral direction in a state that the capacitors are passed through the base resin layer.
Abstract:
Methods of making capacitors are disclosed that comprise forming a dielectric layer over a substrate with a first electrode or a bare metallic foil, depositing a top conductive layer over the dielectric layer, and annealing the dielectric layer and the top conductive layer wherein the foil or first electrode, the dielectric, and the conductive layer form a capacitor.
Abstract:
A semiconductor package, provided with a multilayer interconnect structure, for mounting a semiconductor chip on its top surface, wherein a topmost stacked structure of the multilayer interconnect structure includes a capacitor structure, the capacitor structure having a dielectric layer comprised of a mixed electrodeposited layer of high dielectric constant inorganic filler and insulating resin and including chip connection pads for directly connecting top electrodes and bottom electrodes with electrodes of the semiconductor chip, whereby greater freedom in design of interconnect patterns can be secured, the degree of proximity of the capacitor and semiconductor chip can be greatly improved, and the package can be made smaller and lighter in weight, a method of production of the same, and a semiconductor device using this semiconductor package.
Abstract:
The present invention provides a thin-film embedded capacitance having a substantial electrostatic capacity per unit area, and a method for manufacturing thereof.A thin film embedded capacitance comprising: a metallic thin-film for wiring made of a metallic material in a non-yield state; the first electrode formed on the film for wiring; a dielectric material layer formed on the first electrode and the film for wiring, at a temperature not lower than ordinary room temperature to lower than a yield temperature of the film for wiring, having a coefficient of thermal expansion lower than that the film for wiring; and the second electrode formed on the dielectric material layer, and a method for manufacturing thereof.
Abstract:
Compositions comprising: an epoxy containing cyclic olefin resin with a water absorption of 2% or less; one or more phenolic resins with water absorption of less than 2% or less; an epoxy catalyst; optionally one or more of an electrically insulated filler, a defoamer and a colorant and one or more organic solvents. The compositions are useful as encapsulants and have a cure temperature of 190° C. or less.
Abstract:
An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
Abstract:
A first voltage variable material (“VVM”) includes an insulative binder, first conductive particles with a core and a shell held in the insulating binder and second conductive particles without a shell held in the insulating binder; a second VVM includes an insulating binder, first conductive particles with a core and a shell held in the insulating binder, second conductive particles without a shell held in the insulating binder, and semiconductive particles with a core and a shell held in the insulating binder; a third VVM includes only first conductive particles with a core and a shell held in the insulating binder.