Integrating three-dimensional high capacitance density structures
    102.
    发明授权
    Integrating three-dimensional high capacitance density structures 有权
    集成三维高电容密度结构

    公开(公告)号:US08174017B2

    公开(公告)日:2012-05-08

    申请号:US11505201

    申请日:2006-08-16

    Abstract: Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.

    Abstract translation: 公开了高表面电极上的三维电介质结构和制造方法。 示例性结构包括铜箔衬底,形成在衬底上的沟槽电极或高表面积多孔电极结构,在表面上形成的绝缘薄膜,并将箔层压在有机衬底上。 可以使用各种材料来制造包括钛酸钡,钛酸锶,钛酸锶钡(BST),锆钛酸铅(PZT)等周波陶瓷的膜。 其它中间介电常数膜如氧化锌,氮化铝,氮化硅; 典型的顺电介质如氧化钽,氧化铝和二氧化钛。 可以使用溶胶 - 凝胶,水热合成,阳极氧化或气相沉积技术来制造膜。

    SOLDERING PREFORM
    103.
    发明申请
    SOLDERING PREFORM 审中-公开
    焊接优先

    公开(公告)号:US20120074210A1

    公开(公告)日:2012-03-29

    申请号:US13270655

    申请日:2011-10-11

    Applicant: Franc DUGAL

    Inventor: Franc DUGAL

    Abstract: A soldering preform for soldering in a reducing atmosphere is substantially disc-shaped and has two soldering surfaces each for being in contact with an object to be soldered, respectively, and with at least one recess on at least one soldering surfaces for constituting a channel open to a surface of the object.

    Abstract translation: 用于在还原气氛中焊接的焊接预成型件基本上是圆盘形的,并且具有分别与待焊接物体接触的两个焊接表面,并且在至少一个焊接表面上具有用于构成通道开口的至少一个凹部 到物体的表面。

Patent Agency Ranking