METHODS FOR DETERMINING THE VIRTUAL SOURCE LOCATION OF A LIQUID METAL ION SOURCE

    公开(公告)号:US20250157780A1

    公开(公告)日:2025-05-15

    申请号:US19020049

    申请日:2025-01-14

    Applicant: FEI Company

    Abstract: Variations in charged-particle-beam (CPB) source location are determined by scanning an alignment aperture that is fixed with respect to a beam defining aperture in a CPB, particularly at edges of a defocused CPB illumination disk. The alignment aperture is operable to transmit a CPB portion to a secondary emission surface that produces secondary emission directed to a scintillator element. Scintillation light produced in response is directed out of a vacuum enclosure associated with the CPB via a light guide to an external photodetection system.

    Particle beam device having a deflection unit

    公开(公告)号:US12288664B2

    公开(公告)日:2025-04-29

    申请号:US17695879

    申请日:2022-03-16

    Abstract: The invention relates to a particle beam device (100) for imaging, analyzing and/or processing an object (114). The particle beam device (100) comprises a first particle beam generator (300) for generating a first particle beam, wherein the first particle beam generator (300) has a first generator beam axis (301), wherein an optical axis (OA) of the particle beam device (100) and the first generator beam axis (301) are identical; a second particle beam generator (400) for generating a second particle beam, wherein the second particle beam generator (400) has a second generator beam axis (401), wherein the optical axis (OA) and the second generator beam axis (401) are arranged at an angle being different from 0° and 180°; a deflection unit (500) for deflecting the second particle beam from the second generator beam axis (401) to the optical axis (OA) and along the optical axis (OA), wherein the deflection unit (500) has a first opening (501) and a second opening (502) being different from the first opening (501), wherein the optical axis (OA) runs through the first opening (501), wherein the second generator beam axis (401) runs through the second opening (502); an objective lens (107) for focusing the first particle beam or the second particle beam onto the object (114), wherein the optical axis (OA) runs through the objective lens (107); and at least one detector (116, 121, 122) for detecting interaction particles and/or interaction radiation.

    PLASMA PROCESSING APPARATUS AND CONTROL METHOD THEREFOR

    公开(公告)号:US20250069858A1

    公开(公告)日:2025-02-27

    申请号:US18807175

    申请日:2024-08-16

    Applicant: ULVAC, INC.

    Abstract: [Object] To provide a plasma processing apparatus capable of expanding an formation region of plasma generated on an upper electrode side to increase the processing speed and a control method therefor.
    [Solving Means] A plasma processing apparatus according to an embodiment of the present invention includes a vacuum chamber, a substrate-supporting stage, a counter electrode, and a resonant circuit. The substrate-supporting stage is disposed inside the vacuum chamber and is connected to a first high-frequency power supply circuit that supplies a high-frequency power at a first frequency. The counter electrode is disposed in opposite to the stage and is connected to a second high-frequency power supply circuit that supplies a high-frequency power at a second frequency. The resonant circuit allows high-frequency current at the second frequency from the counter electrode to pass therethrough.

    Beam pattern device having beam absorber structure

    公开(公告)号:US12154756B2

    公开(公告)日:2024-11-26

    申请号:US17814464

    申请日:2022-07-22

    Abstract: A multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, which is irradiated with a beam of electrically charged particles through a plurality of apertures to form corresponding beamlets, comprises an aperture array device in which said apertures are realized according to several sets of apertures arranged in respective aperture arrangements, and an absorber array device having openings configured for the passage of at least a subset of beamlets that are formed by the apertures. The absorber array device comprises openings corresponding to one of the aperture arrangement sets, whereas it includes a charged-particle absorbing structure comprising absorbing regions surrounded by elevated regions and configured to absorb charged particles impinging thereupon at locations corresponding to apertures of the other aperture arrangements of the aperture array device, effectively confining the effects of irradiated particles and electric charge therein.

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