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    SILICON SUBSTRATE PROCESSING METHOD, ELEMENT EMBEDDED SUBSTRATE, AND CHANNEL FORMING SUBSTRATE
    113.
    发明申请
    SILICON SUBSTRATE PROCESSING METHOD, ELEMENT EMBEDDED SUBSTRATE, AND CHANNEL FORMING SUBSTRATE 审中-公开
    硅基板处理方法，元件嵌入式基板和通道形成基板

    公开(公告)号：US20140217066A1

    公开(公告)日：2014-08-07

    申请号：US14174235

    申请日：2014-02-06

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Kazuhiro GOMI

    IPC: C03C15/00 ,  H01L21/768 ,  H01L23/498

    CPC classification number: H01L23/49827 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1645 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/268 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A silicon substrate processing method includes forming an etching mask which has an opening portion, on a surface of a silicon substrate, forming an etching guide hole in the opening portion on the silicon substrate, and forming a through-hole which passes through the silicon substrate, by applying an etching treatment onto the silicon substrate in which the etching guide hole is formed. In the forming of the guide hole, the etching guide hole passing through the silicon substrate is formed by irradiating the opening portion with a laser beam a plurality of times, with a cooling period between each instance of irradiation with the laser beam.

    Abstract translation: 硅衬底处理方法包括在硅衬底的表面上形成具有开口部分的蚀刻掩模，在硅衬底的开口部分中形成蚀刻引导孔，并形成通过硅衬底的通孔 通过对形成有蚀刻导向孔的硅基板进行蚀刻处理。 在导向孔的形成中，穿过硅衬底的蚀刻引导孔通过激光束多次照射开口部分而形成，在每次激光束照射之间具有冷却期间。

    PATTERNING OF ANTISTICTION FILMS FOR ELECTROMECHANICAL SYSTEMS DEVICES
    116.
    发明申请
    PATTERNING OF ANTISTICTION FILMS FOR ELECTROMECHANICAL SYSTEMS DEVICES 失效
    电气系统设备防伪膜的图案

    公开(公告)号：US20130120414A1

    公开(公告)日：2013-05-16

    申请号：US13294114

    申请日：2011-11-10

    Applicant: Teruo Sasagawa

    Inventor： Teruo Sasagawa

    IPC: G06F15/00 ,  B05D3/06 ,  G02B26/00

    CPC classification number: B81C1/00492 ,  B81C1/00269 ,  B81C2201/0143 ,  B81C2203/019

    Abstract: A laser absorption layer is first selectively formed in a seal pattern region surrounding an array of electromechanical systems elements, followed by depositing an antistiction layer as a blanket layer over the substrate and the laser absorption layer. The antistiction layer is then selectively removed from the seal pattern using a laser. An epoxy sealing material is provided in the seal pattern where the antistiction layer was removed and a backplate is sealed to the substrate using epoxy.

    Abstract translation: 首先在围绕机电系统元件的阵列的密封图案区域中选择性地形成激光吸收层，随后在基板和激光吸收层上沉积抗静电层作为覆盖层。 然后使用激光从密封图案中选择性地去除抗静电层。 在密封图案中提供环氧密封材料，其中除去抗静电层，并且使用环氧树脂将背板密封到基底上。

    SYSTEM AND METHODS FOR PREPARING FREESTANDING FILMS USING LASER-ASSISTED CHEMICAL ETCH, AND FREESTANDING FILMS FORMED USING SAME
    117.
    发明申请
    SYSTEM AND METHODS FOR PREPARING FREESTANDING FILMS USING LASER-ASSISTED CHEMICAL ETCH, AND FREESTANDING FILMS FORMED USING SAME 有权
    使用激光辅助化学蚀刻制备自动膜的系统和方法以及使用其形成的自动膜

    公开(公告)号：US20130043486A1

    公开(公告)日：2013-02-21

    申请号：US13655198

    申请日：2012-10-18

    Applicant: Margaret H. Abraham ,  David P. Taylor

    Inventor： Margaret H. Abraham ,  David P. Taylor

    IPC: H01L21/302 ,  H01L29/20 ,  H01L29/16 ,  H01L29/02

    CPC classification number: H01L21/30604 ,  B81C1/00047 ,  B81C1/00547 ,  B81C2201/0143 ,  B82Y30/00

    Abstract: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.

    Abstract translation: 提供了使用激光辅助化学蚀刻（LACE）制备独立膜的系统和方法，以及使用其形成的独立膜。 根据一个方面，衬底具有限定各向同性定义的空腔的表面和部分; 并且基本上连续的膜设置在基底表面并跨越各向同性地限定的腔。 根据另一方面，一种衬底具有限定各向同性定义的空腔的表面和一部分; 并且膜被设置在基板表面并跨越各向同性地限定的空腔，所述膜包括预定相的氧化铪（HfO 2），类金刚石碳，石墨烯和碳化硅（SiC）中的至少一种。 根据另一方面，一种基板具有限定各向同性定义的空腔的表面和一部分; 并且多层膜设置在基板表面并跨越各向同性定义的空腔。

    FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES
    118.
    发明申请
    FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES 审中-公开
    自由形式印刷硅微结构和纳米结构

    公开(公告)号：US20130029480A1

    公开(公告)日：2013-01-31

    申请号：US13639221

    申请日：2011-04-05

    Applicant: Frank Niklaus ,  Andreas Fischer

    Inventor： Frank Niklaus ,  Andreas Fischer

    IPC: H01L21/20 ,  H01L21/205

    CPC classification number: B81C1/00373 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0143 ,  B81C2201/0188 ,  B82Y20/00

    Abstract: A method of making a three-dimensional structure in semiconductor material includes providing a substrate (20) is provided having at least a surface including semiconductor material. Selected areas of the surface of the substrate are exposed to a focussed ion beam whereby the ions are implanted in the semiconductor material in the selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focussed ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focussed ion beam is etched away so as to provide a three-dimensional structure on the substrate (20).

    Abstract translation: 在半导体材料中制造三维结构的方法包括提供至少具有包括半导体材料的表面的基底（20）。 将基板的表面的选定区域暴露于聚焦的离子束，由此将离子注入到所选择的区域中的半导体材料中。 选自由单晶，多晶或非晶半导体材料组成的组的几层材料沉积在衬底表面上，并且在沉积之间聚焦离子束以暴露表面以便限定三维结构 。 不会被聚焦的离子束限定的最终结构（30）的部分的材料被蚀刻掉，以便在衬底（20）上提供三维结构。

    Laser patterning of glass bodies
    119.
    发明授权
    Laser patterning of glass bodies 有权
    玻璃体的激光图案化

    公开(公告)号：US08257603B2

    公开(公告)日：2012-09-04

    申请号：US12480933

    申请日：2009-06-09

    Applicant: Stephan Lvovich Logunov ,  Joseph Francis Schroeder, III

    Inventor： Stephan Lvovich Logunov ,  Joseph Francis Schroeder, III

    IPC: B44C1/22 ,  B23K26/00

    CPC classification number: C03C23/0025 ,  B81C1/00539 ,  B81C2201/0133 ,  B81C2201/0143 ,  C03C15/00

    Abstract: Methods are provided for laser patterning a partial depth surface portion of a glass body by controlling the amount of stress induced in the glass body. A laser beam is directed along an impinged path on the surface portion of the glass body to heat the glass body to form a swell. The glass body is then cooled and etched. The surface portion of the glass body is heated above the strain point at a heating rate HR to form a swell. The heating rate HR is a function of a target temperature T and an exposure time of the output laser beam. The exposure time is controlled to reach a target temperature above the softening point of the glass body and does not require a power density that would lead to laser ablation of the surface portion. The surface portion is cooled below the strain point to induce regions of localized stress. The unablated surface portion is etched while in a state of laser-induced localized stress to form a patterned glass body.

    Abstract translation: 提供了通过控制在玻璃体中引起的应力的量来激光图案化玻璃体的部分深度表面部分的方法。 激光束沿着玻璃体的表面部分上的冲击路径引导以加热玻璃体以形成膨胀。 然后将玻璃体冷却并蚀刻。 将玻璃体的表面部分以加热速率HR加热到应变点以上以形成膨胀。 加热速率HR是目标温度T和输出激光束的曝光时间的函数。 控制曝光时间以达到高于玻璃体的软化点的目标温度，并且不需要将导致表面部分的激光烧蚀的功率密度。 将表面部分冷却到应变点以下以引起局部应力的区域。 在激光引起的局部应力的状态下，对未加工的表面部分进行蚀刻，以形成图案化的玻璃体。

    SYSTEMS AND METHODS FOR PREPARING FREESTANDING FILMS USING LASER-ASSISTED CHEMICAL ETCH, AND FREESTANDING FILMS FORMED USING SAME
    120.
    发明申请
    SYSTEMS AND METHODS FOR PREPARING FREESTANDING FILMS USING LASER-ASSISTED CHEMICAL ETCH, AND FREESTANDING FILMS FORMED USING SAME 有权
    使用激光辅助化学蚀刻制备自动膜的系统和方法以及使用其形成的自动膜

    公开(公告)号：US20120049200A1

    公开(公告)日：2012-03-01

    申请号：US12869597

    申请日：2010-08-26

    Applicant: Margaret H. Abraham ,  David P. Taylor

    Inventor： Margaret H. Abraham ,  David P. Taylor

    IPC: H01L29/20 ,  H01L23/31 ,  H01L21/306

    CPC classification number: H01L21/30604 ,  B81C1/00047 ,  B81C1/00547 ,  B81C2201/0143 ,  B82Y30/00

    Abstract: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.

    Abstract translation: 提供了使用激光辅助化学蚀刻（LACE）制备独立膜的系统和方法，以及使用其形成的独立膜。 根据一个方面，衬底具有限定各向同性定义的空腔的表面和部分; 并且基本上连续的膜设置在基底表面并跨越各向同性地限定的腔。 根据另一方面，一种衬底具有限定各向同性定义的空腔的表面和一部分; 并且膜被设置在基板表面并跨越各向同性地限定的空腔，所述膜包括预定相的氧化铪（HfO 2），类金刚石碳，石墨烯和碳化硅（SiC）中的至少一种。 根据另一方面，一种基板具有限定各向同性定义的空腔的表面和一部分; 并且多层膜设置在基板表面并跨越各向同性定义的空腔。

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