公开(公告)号：US09859153B1

公开(公告)日：2018-01-02

申请号：US15350911

申请日：2016-11-14

Applicant: Lam Research Corporation

Inventor： Meliha Gozde Rainville ,  Nagraj Shankar ,  Kapu Sirish Reddy ,  Dennis M. Hausmann

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  C23C22/05 ,  H01L23/532

CPC classification number: H01L21/76834 ,  C23C16/403 ,  C23C16/4554 ,  C23C16/45589 ,  C23C16/52 ,  C23C22/05 ,  H01J37/00 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/31144 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53257

Abstract: Aluminum oxide films characterized by a dielectric constant (k) of less than about 7 (such as between about 4-6) and having a density of at least about 2.5 g/cm3 (such as about 3.0-3.2 g/cm3) are deposited on partially fabricated semiconductor devices over both metal and dielectric to serve as etch stop layers. The films are deposited using a deposition method that does not lead to oxidative damage of the metal. The deposition involves reacting an aluminum-containing precursor (e.g., a trialkylaluminum) with an alcohol and/or aluminum alkoxide. In one implementation the method involves flowing trimethylaluminum to the process chamber housing a substrate having an exposed metal and dielectric layers; purging and/or evacuating the process chamber; flowing t-butanol to the process chamber and allowing it to react with trimethylaluminum to form an aluminum oxide film and repeating the process steps until the film of desired thickness is formed.

公开(公告)号：US20170306492A1

公开(公告)日：2017-10-26

申请号：US15491231

申请日：2017-04-19

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Kazutaka IIZUKA

IPC: C23C16/50 ,  C23C16/04

CPC classification number: C23C16/50 ,  C23C16/042 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/54 ,  H01J37/00

Abstract: A film forming apparatus configured to form a film on part of a work. The film forming apparatus comprises a film forming vessel comprising a first mold located above the work and a second mold located below the work to be opposed to the first mold. The first mold is configured to include a first recessed portion that is recessed upward viewed from a film formation target part of the work and a first planar portion arranged around the first recessed portion. The second mold is configured to include a second planar portion in a place opposed to the first planar portion. The film forming apparatus also comprises a first seal member located between the first planar portion and the work. The first seal member is configured to come into contact with the first planar portion and the work when the work is away from the first planar portion. The film forming apparatus further comprises a second seal member located between the second planar portion and the work. The second seal member is configured to come into contact with the second planar portion and the work when the work is away from the second planar portion. The second seal member is provided on a lower face of the work. This configuration suppresses poor film formation when the seal member is placed between the film forming vessel and the work.

公开(公告)号：US09752981B2

公开(公告)日：2017-09-05

申请号：US15089214

申请日：2016-04-01

Applicant: Lam Research Corporation

Inventor： Seonkyung Lee ,  Dmitry Opaits

IPC: G01N21/55 ,  G01N21/27 ,  H01J37/00 ,  G01N21/84

CPC classification number: G01N21/55 ,  G01N21/272 ,  G01N2021/8411 ,  G01N2201/0633 ,  G01N2201/08 ,  G01N2201/1222 ,  H01J37/00 ,  H01J37/32972

Abstract: A spectral reflectometer system for measuring a substrate is provided. A light source is provided. At least one optical detector is provided. An optical cable comprises a plurality of optical fibers, wherein the plurality of optical fibers comprises a first plurality of optical fibers, which are transmission optical fibers which extend from the light source to an optical path, and a second plurality of optical fibers, which are reflection optical fibers which extend from the optical path to the at least one optical detector. A microlens array is in the optical path.

公开(公告)号：US09704714B2

公开(公告)日：2017-07-11

申请号：US14688191

申请日：2015-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Weibo Yu ,  Jui-Ping Chuang ,  Chen-Hsiang Lu ,  Shao-Yen Ku

IPC: H01L21/66 ,  H01L21/263 ,  H05F3/06 ,  H05F3/04 ,  H01L21/67 ,  H01J37/00 ,  H01L21/677

CPC classification number: H01L21/263 ,  H01J37/00 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67733 ,  H01L21/67736 ,  H01L22/14 ,  H01L22/20 ,  H05F3/04 ,  H05F3/06

Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.

公开(公告)号：US20170186582A1

公开(公告)日：2017-06-29

申请号：US14979583

申请日：2015-12-28

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： HERRE TJERK STEENSTRA

IPC: H01J37/24 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/243 ,  G03F7/2059 ,  G05B2219/45028 ,  G06F1/14 ,  G06F13/40 ,  H01J37/00 ,  H01J37/045 ,  H01J37/3174 ,  H04J3/0638 ,  H04L7/0008

Abstract: A method for initializing a first operation in a first module at a first start time value in a first time base, the method comprising generating a clock signal, generating a second time base in the first module based on the clock signal, determining a second sync value in the second time base, determining a first sync value in the first time base corresponding to a second sync value in the second time base, determining a start trigger value in the second time base based on the first sync value and the start time value in the first time base, and initializing the first operation in the first module based on the start trigger value and a current value of the second time base in the first module.

公开(公告)号：US20170176298A1

公开(公告)日：2017-06-22

申请号：US15063514

申请日：2016-03-08

Applicant: BIO MATERIALS ANALYSIS TECHNOLOGY INC.

Inventor： Pin Chang ,  Ying-Chan Hung ,  Hung-Jen Chen

IPC: G01N1/02 ,  G02B5/20

CPC classification number: G01N1/02 ,  G01N23/2204 ,  G02B5/208 ,  G02B21/00 ,  H01J37/00

Abstract: A sample collection component including a main body and a removable light shielding component is provided. The main body has a sample storing space which is sealable and allows light to pass through. The removable light shielding component is disposed on the main body and located outside the sample storing space for shielding at least a portion of the light passing through the sample storing space. In addition, a manufacturing method of the sample collection component is also provided.

公开(公告)号：US20160322215A1

公开(公告)日：2016-11-03

申请号：US14701479

申请日：2015-04-30

Applicant: Lam Research Corporation

Inventor： Fayaz Shaikh

IPC: H01L21/02

CPC classification number: H01J37/00 ,  C23C16/45565 ,  C23C16/45587 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32926 ,  H01J37/32935

Abstract: Methods and systems for depositing material layers with gap variation between film deposition operations. One method includes depositing a material layer over a substrate. The depositing is performed in a plasma chamber having a bottom electrode and a top electrode. The method includes providing a substrate over the bottom electrode in the plasma chamber. The method sets a first gap between the bottom and top electrodes and performs plasma deposition to deposit a first film of the material layer over the substrate while the first gap is set between the bottom and top electrodes. The method then sets a second gap between the bottom a top electrodes and performs plasma deposition to deposit a second film of the material layer over the substrate while the second gap is set between the bottom and top electrodes. The material layer is defined by the first and second films and the first gap is varied to the second gap to offset expected non-uniformities when depositing the first film followed by the second film.

Abstract translation: 用于在膜沉积操作之间沉积具有间隙变化的材料层的方法和系统。 一种方法包括在衬底上沉积材料层。 在具有底部电极和顶部电极的等离子体室中进行沉积。 该方法包括在等离子体室中的底部电极上提供衬底。 该方法设置底部和顶部电极之间的第一间隙，并且执行等离子体沉积以在衬底上沉积材料层的第一膜，同时将第一间隙设置在底部和顶部电极之间。 然后，该方法在底部的顶部电极之间设置第二间隙，并执行等离子体沉积，以在第二间隙设置在底部电极和顶部电极之间的同时在衬底上沉积材料层的第二膜。 材料层由第一和第二膜限定，并且第一间隙随着第二间隙而变化到第二间隙以抵消预期的不均匀性，当沉积第一膜后跟第二膜时。

公开(公告)号：US09460915B2

公开(公告)日：2016-10-04

申请号：US14485142

申请日：2014-09-12

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha Varadarajan ,  Shankar Swaminathan ,  Saangrut Sangplung ,  Frank Pasquale ,  Ted Minshall ,  Adrien LaVoie ,  Mohamed Sabri ,  Cody Barnett

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

Abstract translation: 用于在衬底上沉积膜的衬底处理系统包括限定反应体积并包括用于支撑衬底的衬底支撑件的处理室。 气体输送系统被配置为将处理气体引入到处理室的反应体积中。 等离子体发生器被配置为在反应体积中选择性地产生RF等离子体。 夹持系统被配置为在膜的沉积期间将衬底夹持到衬底支撑件。 背面清洗系统被配置为在膜的沉积期间将反应气体供应到衬底的后侧边缘以净化后侧边缘。

公开(公告)号：US09315757B2

公开(公告)日：2016-04-19

申请号：US14831630

申请日：2015-08-20

Applicant: Jackson Thornton ,  Vinay G. Sakhrani ,  Charles Tomasino ,  Robert A. Mineo

Inventor： Jackson Thornton ,  Vinay G. Sakhrani ,  Charles Tomasino ,  Robert A. Mineo

IPC: A61M5/31 ,  C10M107/50 ,  F16C33/04 ,  C10M155/02 ,  C10M147/04 ,  C10M177/00 ,  C10M107/38 ,  H01J37/00 ,  A61M5/315

CPC classification number: C10M107/50 ,  A61M5/3129 ,  A61M5/31513 ,  A61M2005/3131 ,  C10M107/38 ,  C10M147/04 ,  C10M155/02 ,  C10M177/00 ,  C10M2213/0606 ,  C10M2229/0405 ,  C10M2229/0415 ,  C10N2230/06 ,  C10N2240/66 ,  C10N2280/00 ,  H01J37/00 ,  H01J37/321 ,  H01J37/32192 ,  H05H2001/466 ,  H05H2001/4667

Abstract: The present application is directed to methods and devices for altering material properties of lubricants and other cross-linkable compounds comprising organic or organometallic materials through exposure to energized gaseous species. The energized gaseous species may create reactive sites among lubricant molecules that may alter their material properties by cross-linking at least a portion of the lubricant molecules. The cross-linked lubricant may reduce the ability of the lubricant to migrate away when force is applied between lubricated sliding friction surfaces.

公开(公告)号：US20160086759A1

公开(公告)日：2016-03-24

申请号：US14961021

申请日：2015-12-07

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Thomas N. Horsky ,  Sami K. Hahto

IPC: H01J27/20 ,  H01J27/02

CPC classification number: H01J27/205 ,  C23C14/48 ,  H01J27/022 ,  H01J37/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/082 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.

Abstract translation: 提供了一种用于离子注入机的等离子体发生器。 等离子体发生器包括用于形成适于产生多个离子和多个电子的等离子体的电离室。 电离室的内表面暴露于等离子体并由第一非金属材料构成。 等离子体发生器还包括热离子发射器，其包括暴露于等离子体的至少一个表面。 热离子发射器由第二非金属材料构成。 等离子体发生器还包括用于从电离室中提取多个离子或多个电子中的至少一个的出射孔，以形成离子束或电子通量中的至少一个。 离子束或电子通量基本上不包含金属。 第一和第二非金属材料可以相同或不同。