公开(公告)号：US10233548B2

公开(公告)日：2019-03-19

申请号：US13808261

申请日：2011-07-05

Applicant: Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

Inventor： Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

IPC: C23C14/34 ,  C23F4/02 ,  H01J37/08 ,  G01N23/225 ,  H01J37/244 ,  G01N1/32 ,  H01J37/30 ,  H01J37/305

Abstract: Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

公开(公告)号：US20190074158A1

公开(公告)日：2019-03-07

申请号：US15905896

申请日：2018-02-27

Applicant: Toshiba Memory Corporation

Inventor： Tsuyoshi Fujii ,  Takayuki Ito ,  Yasunori Oshima

IPC: H01J37/24 ,  H01J37/317 ,  H01J37/147 ,  H01J37/08 ,  H01J37/20

CPC classification number: H01J37/243 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/032 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/1507 ,  H01J2237/20207 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01J2237/3171

Abstract: In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

公开(公告)号：US10224179B2

公开(公告)日：2019-03-05

申请号：US14878206

申请日：2015-10-08

Applicant: CANON ANELVA CORPORATION

Inventor： Yasushi Yasumatsu ,  Naoyuki Okamoto ,  Masashi Tsujiyama ,  Fumihito Suzuki

IPC: H01J37/30 ,  H01J37/305 ,  H01J37/08 ,  H01J27/02 ,  B08B3/08 ,  H01J37/063 ,  H01J37/317

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

公开(公告)号：US20190066967A1

公开(公告)日：2019-02-28

申请号：US15692745

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Kun KAO ,  Tsung-Min LIN ,  Jen-Chung CHIU ,  Ren-Dou LEE

IPC: H01J37/08 ,  H01J37/317

Abstract: Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.

公开(公告)号：US10217600B1

公开(公告)日：2019-02-26

申请号：US15788428

申请日：2017-10-19

Applicant: Carlos F. M. Borges ,  Manuel A. Jerez ,  Amnon Parizat

Inventor： Carlos F. M. Borges ,  Manuel A. Jerez ,  Amnon Parizat

IPC: H01J37/08 ,  H01J37/317

Abstract: The indirectly heated cathode ion source assembly employs a cathode cup unit and filament arrangement wherein the filament has a flat face spaced from a tungsten disc-shaped body and is disposed in a space that is surrounded by a thermal barrier to reduce thermal losses. The thermal barrier is formed by a plurality of concentric foils that are closely spaced.

公开(公告)号：US20190051486A1

公开(公告)日：2019-02-14

申请号：US15725045

申请日：2017-10-04

Applicant: Dalian University of Technology

Inventor： Fei GAO ,  Younian WANG

IPC: H01J27/20 ,  H01J37/08 ,  H01J37/32 ,  H01J37/24 ,  H01J37/05

Abstract: The present invention discloses a positive and negative ion source based on radio-frequency inductively coupled discharge, comprising a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply. In the present invention, the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved.

公开(公告)号：US10204758B1

公开(公告)日：2019-02-12

申请号：US15725045

申请日：2017-10-04

Applicant: Dalian University of Technology

Inventor： Fei Gao ,  Younian Wang

IPC: H01J27/00 ,  H01J49/10 ,  H01J27/20 ,  H01J37/08 ,  H01J37/24 ,  H01J37/05 ,  H01J37/32

Abstract: The present invention discloses a positive and negative ion source based on radio-frequency inductively coupled discharge, comprising a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply. In the present invention, the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved.

公开(公告)号：US10181402B2

公开(公告)日：2019-01-15

申请号：US15047553

申请日：2016-02-18

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

IPC: H01L29/167 ,  H01J37/05 ,  H01L21/265 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317

Abstract: A method of treating a surface of a silicon substrate forms an accelerated gas cluster ion beam of carbon atoms, promotes fragmentation and/or dissociation of gas cluster ions in the beam, removes charged particles from the beam to form a neutral beam, and treats a portion of a surface of the silicon substrate by irradiating it with the neutral beam. A silicon substrate surface layer of SiCX (0.05

公开(公告)号：US10147584B2

公开(公告)日：2018-12-04

申请号：US15463473

申请日：2017-03-20

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Frank Sinclair ,  Daniel Tieger ,  Klaus Becker

IPC: H01L21/265 ,  G21K5/10 ,  H01J37/317 ,  H01J37/08 ,  H01J37/20

Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

公开(公告)号：US10128083B2

公开(公告)日：2018-11-13

申请号：US15170570

申请日：2016-06-01

Applicant: Veeco Instruments Inc.

Inventor： Boris Druz ,  Rustam Yevtukhov ,  Robert Hieronymi ,  Alan V. Hayes ,  Mathew Levoso ,  Peter Porshnev

IPC: H01J37/08 ,  H01J37/305 ,  H01J27/18

Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.