METHOD FOR GENERATING MASK PATTERN
    130.
    发明公开

    公开(公告)号:US20230393458A1

    公开(公告)日:2023-12-07

    申请号:US18031865

    申请日:2021-09-27

    Inventor: Jaiin MOON

    CPC classification number: G03F1/36

    Abstract: A method for generating a mask pattern for a patterning process. The method includes obtaining (i) a subset of target features (e.g., features too close) within a target pattern, the subset of target features having physical characteristic values below a threshold value, and (ii) an initial mask pattern (e.g., using an existing OPC process) associated with the target pattern; and modifying, based on a mask manufacturing constraint and a performance metric of the patterning process, one or more features of the initial mask pattern corresponding to the subset of target features to generate the mask pattern, the modifying including applying a curvature to a portion of the one or more features of the initial mask pattern.

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