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    Control of solid state dimensional features
    134.
    发明申请
    Control of solid state dimensional features 有权

    公开(公告)号：US20030066749A1

    公开(公告)日：2003-04-10

    申请号：US10186105

    申请日：2002-06-27

    Applicant: President and Fellows of Harvard College

    Inventor： Jene A. Golovchenko ,  Daniel Branton ,  Michael J. Aziz ,  Jiali Li ,  Derek M. Stein ,  Ciaran J. McMullan

    IPC: C23C014/32

    CPC classification number: B81C1/00626 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A solid state structure having a surface is provided and is exposed to a flux, F, of incident ions. The conditions of this incident ion exposure are selected based on: 1 null null t null C null ( r , t ) = F null null null Y 1 + D null null 2 null C - C null trap - F null null null C null null null null C , where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, Y1 is number of adatoms created per incident ion, D is adatom diffusivity, nulltrap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of solid state structure material, and nullCis cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, material of the structure to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding material of the structure to the feature location.

    Laser release process for micromechanical devices
    135.
    发明授权
    Laser release process for micromechanical devices 有权
    微机械装置的激光释放过程

    公开(公告)号：US06538233B1

    公开(公告)日：2003-03-25

    申请号：US09992946

    申请日：2001-11-06

    Applicant: W. David Lee ,  Paul A. Ruggerio

    Inventor： W. David Lee ,  Paul A. Ruggerio

    IPC: B23K2600

    CPC classification number: B81C1/00484 ,  B23K26/40 ,  B23K2103/50 ,  B81C1/00968 ,  B81C2201/0143 ,  G01P15/0802 ,  G01P2015/0814

    Abstract: A method for releasing a structure from contact with a substrate in a micromechanical device includes the step of irradiating the structure with energy having parameters selected to produce a thermal gradient normal to the surface of the structure which causes upward bowing and release of the structure from the substrate. Preferably, the structure is irradiated with laser energy and, more preferably, the structure is irradiated with pulsed laser energy. The temperature gradient creates a strain gradient, due to thermal expansion, which causes the structure to bow upwardly. Support elements react and hold the structure up after the thermal gradient has disappeared.

    Abstract translation: 用于在微机械装置中释放结构与基底接触的方法包括以下步骤：用能量进行照射，所述能量具有选择的参数，以产生与结构表面垂直的热梯度，这导致结构的向上弯曲和释放 基质。 优选地，用激光能量照射该结构，更优选地，用脉冲激光能量照射该结构。 温度梯度由于热膨胀而产生应变梯度，这导致结构向上弯曲。 支撑元件在热梯度消失后反应并保持结构。

    Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS
    136.
    发明申请
    Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS 失效
    具有加强的支撑梁的微机电装置以及在MEMS中形成加强的支撑梁的方法

    公开(公告)号：US20030032215A1

    公开(公告)日：2003-02-13

    申请号：US09924370

    申请日：2001-08-07

    Inventor： Thomas W. Ives

    IPC: H01L021/00 ,  H01L021/44 ,  H01L021/48 ,  H01L021/50 ,  H01L029/82

    CPC classification number: G01P15/08 ,  B81B3/007 ,  B81B2201/0235 ,  B81C2201/0143 ,  G01P2015/0817

    Abstract: A microelectromechanical device (MEMD) defined within a substrate of a MEMS includes a mass element defining an area of interest. The device also includes a support beam supporting the mass element in spaced-apart relationship from the substrate. The support beam includes a first beam member defined by a first fixed end connected to the substrate, and a first free end connected to the mass element. The support beam further includes a second beam member defined by a second fixed end connected to the substrate, and a second free end connected to the mass element. The beam members are in spaced-apart relationship from one another. A first cross member connects the first beam member and the second beam member. Preferably, the support beam includes a plurality of cross members. Two such support beams can be used to support a mass element in a MEMD in a bridge configuration.

    Abstract translation: 限定在MEMS的衬底内的微机电装置（MEMD）包括限定感兴趣区域的质量元件。 该装置还包括支撑梁，该支撑梁以与衬底隔开的关系支撑质量元件。 支撑梁包括由连接到基板的第一固定端和连接到质量元件的第一自由端限定的第一梁构件。 支撑梁还包括由连接到基板的第二固定端限定的第二梁构件和连接到质量元件的第二自由端。 梁构件彼此间隔开。 第一横向构件连接第一梁构件和第二梁构件。 优选地，支撑梁包括多个横向构件。 可以使用两个这样的支撑梁来支撑桥梁构造中的MEMD中的质量元件。

    Ultraviolet method of embedding structures in photocerams
    137.
    发明申请
    Ultraviolet method of embedding structures in photocerams 有权
    紫外线包埋结构在光油中的应用

    公开(公告)号：US20020139769A1

    公开(公告)日：2002-10-03

    申请号：US09821918

    申请日：2001-03-30

    Applicant: The Aerospace Corporation

    Inventor： Henry Helvajian ,  Peter D. Fuqua ,  William W. Hansen

    IPC: B44C001/22 ,  C03C015/00

    CPC classification number: B81C1/00492 ,  B44C1/227 ,  B44C1/228 ,  B81C2201/0133 ,  B81C2201/0143 ,  C03C23/0025

    Abstract: A laser direct write method creates true three dimensional structures within photocerams using an focused pulsed ultraviolet laser with a wavelength in a weakly absorbing region of the photoceram material. A critical dose of focused laser UV light selectively exposes embedded volumes of the material for subsequent selective etching. The photoceram material exposure is nonlinear with the laser fluence and the critical dose depends on the square of the per shot fluence and the number of pulses. The laser light is focused to a focal depth for selective volumetric exposure of the material within a focal volume within the remaining collateral volumes that is critically dosed for selecting etching and batch fabrication of highly defined embedded structures.

    Abstract translation: 激光直接写入方法使用在光致抗蚀剂材料的弱吸收区域中具有波长的聚焦脉冲紫外激光器在光泽内产生真正的三维结构。 聚焦激光UV光的关键剂量选择性地暴露了材料的嵌入体积，用于随后的选择性蚀刻。 光泽材料暴露是非线性的，具有激光注量，临界剂量取决于每个射流注量的平方和脉冲数。 激光被聚焦到焦点深度，用于在残留的临时体积内的焦点体积内材料的选择性体积暴露，其被批量选择用于选择高度限定的嵌入结构的蚀刻和批量制造。

    MANUFACTURING METHOD OF MEMS DEVICE
    138.
    发明公开
    MANUFACTURING METHOD OF MEMS DEVICE 审中-公开

    公开(公告)号：US20240351865A1

    公开(公告)日：2024-10-24

    申请号：US18622059

    申请日：2024-03-29

    Applicant: Xintec Inc.

    Inventor： Jiun-Yen LAI ,  Wei-Luen SUEN ,  Ming-Chung CHUNG ,  Chih-Wei LIU

    IPC: B81C1/00

    CPC classification number: B81C1/00825 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2201/0146 ,  B81C2201/0159

    Abstract: A manufacturing method of a micro electro mechanical system (MEMS) device includes forming a buffer protection layer on a semiconductor structure, wherein the semiconductor structure includes a wafer, a MEMS membrane, and an isolation layer between the wafer and the MEMS membrane, and the buffer protection layer is located in a slit of the MEMS membrane and on a surface of the MEMS membrane facing away from the isolation layer; etching the wafer to form a cavity such that a portion of the isolation layer is exposed though the cavity; etching the portion of the isolation layer; and removing the buffer protection layer.

    Fluid sensor system
    140.
    发明授权
    Fluid sensor system 有权

    公开(公告)号：US12044646B2

    公开(公告)日：2024-07-23

    申请号：US17321130

    申请日：2021-05-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Chwen Yu

    IPC: G01N27/22 ,  B81C1/00

    CPC classification number: G01N27/226 ,  B81C1/00531 ,  G01N27/227 ,  B81C2201/0143

    Abstract: The present disclosure provides a fluid sensor and a method for fabricating a fluid sensor. The fluid sensor includes a substrate including a first material and having a first surface and a second surface opposite to the first surface, wherein the substrate further comprises a recess recessed from the first surface, a first conductive layer over the first surface of the substrate, a protection layer between the first surface of the substrate and the first conductive layer, wherein the protection layer includes a second material, and a through via connected to the recess.

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