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    ELECTRON GUN AND RADIATION GENERATING APPARATUS
    134.
    发明申请
    ELECTRON GUN AND RADIATION GENERATING APPARATUS 审中-公开
    电子枪和辐射发生装置

    公开(公告)号：US20160293375A1

    公开(公告)日：2016-10-06

    申请号：US15037971

    申请日：2014-09-16

    Applicant: SIEMENS AKTIENGESELLSCHAFT

    Inventor： Oliver HEID

    IPC: H01J3/02 ,  H01J35/14 ,  H01J3/18 ,  H01J35/06

    CPC classification number: H01J3/027 ,  H01J3/02 ,  H01J3/18 ,  H01J35/06 ,  H01J35/14

    Abstract: The invention relates to an electron gun for generating a flat electron beam, comprising a cathode with an emission surface which is curved about a central axis and which is designed to emit electrons. The electron gun further comprises an accelerating device for accelerating the electrons in a radial direction towards a target region on the central axis. Furthermore, the emission surface has a width in the azimuth direction and a height oriented perpendicularly to the width, said width being at least ten times greater than the height.

    Abstract translation: 本发明涉及一种用于产生平面电子束的电子枪，包括具有围绕中心轴线弯曲且被设计为发射电子的发射表面的阴极。 电子枪还包括加速装置，用于沿着径向加速电子朝向中心轴上的目标区域。 此外，发射表面具有方位方向上的宽度和垂直于宽度的高度，所述宽度比高度高至少十倍。

    ION Implantation with Charge and Direction Control
    136.
    发明申请
    ION Implantation with Charge and Direction Control 有权
    离子注入与充电和方向控制

    公开(公告)号：US20150069913A1

    公开(公告)日：2015-03-12

    申请号：US14541314

    申请日：2014-11-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0041 ,  H01J2237/31705

    Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    Abstract translation: 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。

    Electron beam exposure system
    139.
    再颁专利
    Electron beam exposure system 有权
    电子束曝光系统

    公开(公告)号：USRE44908E1

    公开(公告)日：2014-05-27

    申请号：US13343036

    申请日：2012-01-04

    Applicant: Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

    Inventor： Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

    IPC: H01J37/30 ,  H01J37/304 ,  H01J37/06

    CPC classification number: H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

    Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

    Abstract translation: 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

    Unbalanced field RF electron gun
    140.
    发明授权
    Unbalanced field RF electron gun 有权
    不平衡场RF电子枪

    公开(公告)号：US08581526B1

    公开(公告)日：2013-11-12

    申请号：US12807136

    申请日：2010-08-28

    Applicant: Alicia Hofler

    Inventor： Alicia Hofler

    IPC: H05H7/00

    CPC classification number: H01J3/02

    Abstract: A design for an RF electron gun having a gun cavity utilizing an unbalanced electric field arrangement. Essentially, the electric field in the first (partial) cell has higher field strength than the electric field in the second (full) cell of the electron gun. The accompanying method discloses the use of the unbalanced field arrangement in the operation of an RF electron gun in order to accelerate an electron beam.

    Abstract translation: 用于具有利用不平衡电场布置的枪腔的RF电子枪的设计。 本质上，第一（部分）电池中的电场具有比电子枪第二（满）电池中的电场高的场强。 伴随的方法公开了在RF电子枪的操作中使用不平衡场布置以加速电子束。

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