Abstract:
A method for manufacturing fine-pitch bumps comprises the steps of providing a silicon substrate; forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first zones and a plurality of second zones; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer to form a plurality of opening slots; forming a plurality of copper bumps at the opening slots, wherein each of the copper bumps comprises a first top surface and a ring surface; heating the photoresist layer to form a plurality of body portions and a plurality of removable portions; etching the photoresist layer; and removing the second zones to enable each of the first zones to form an under bump metallurgy layer having a bearing portion and an extending portion.
Abstract:
A substrate structure with compliant bump comprises a substrate, a plurality of bumps, and a metallic layer, wherein the substrate comprises a surface, a trace layer, and a protective layer. The trace layer comprises a plurality of conductive pads, and each of the conductive pads comprises an upper surface. The protective layer comprises a plurality of openings. The bumps are formed on the surface, and each of the bumps comprises a top surface, an inner surface and an outer surface and defines a first body and a second body. The first body is located on the surface. The second body is located on top of the first body. The metallic layer is formed on the top surface, the inner surface, and the upper surface.
Abstract:
A method for fabricating a carrier with a three-dimensional inductor comprises the steps of providing a substrate having a protective layer; forming a first photoresist layer on the protective layer; patterning the first photoresist layer to form a second opening and a plurality of disposing slots; forming a first metal layer in second opening and disposing slots; removing the first photoresist layer; forming a first dielectric layer on the protective layer; forming a second photoresist layer on the first dielectric layer; patterning the second photoresist layer to form a plurality of slots; forming a second metal layer in slots to form a plurality of inductive portions; removing the second photoresist layer; forming a second dielectric layer on the first dielectric layer; forming a third photoresist layer on the second dielectric layer; patterning the third photoresist layer to form a plurality of slots; and forming a third metal layer in slots.
Abstract:
A laser sintering system is provided for sintering a die having a serrate edge. The laser sintering system comprises a laser generator for generating a laser beam and a movable carriage for carrying said die. The laser beam sinters the serrate edge of said die into a smooth edge. A method of sintering a die, the die having a serrate edge, comprises the following steps of providing a die and using a laser beam sintering the serrate edge of said die into a smooth edge. A die has a smooth edge sintered by a laser beam.
Abstract:
The present invention relates to a wafer level package structure with a metal protection layer, and more particularly, to a wafer level package structure with a metal protection layer which is made of titanium, nickel, chromium or alloy thereof. The metal protection layer is adopted to prevent the substrate from being damaged by metal solder bumps. The metal protection layer also contributes to heat conduction and heat dissipation. Moreover, the metal protection layer is acid and alkali resistant and electromagnetic interference (EMI) resistant. The present invention improves the reliability of the IC component effectively.