公开(公告)号：US09638913B2

公开(公告)日：2017-05-02

申请号：US14553807

申请日：2014-11-25

Applicant: Inphenix, Inc.

Inventor： Mohammad Kamal ,  Tongning Li ,  David Eu ,  Qinian Qi

IPC: H01S5/00 ,  H01S3/08 ,  G02B26/00 ,  H01S5/14 ,  H01S3/083 ,  H01S3/105

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

公开(公告)号：US09631929B2

公开(公告)日：2017-04-25

申请号：US15037532

申请日：2014-10-21

Applicant: SAFRAN ELECTRONICS & DEFENSE

Inventor： Alain Jeanroy ,  Philippe Onfroy

IPC: G01C19/574 ,  G01C19/5769 ,  G01C19/5733 ,  B81B3/00 ,  B81C1/00

CPC classification number: G01C19/574 ,  B81B3/0021 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81C1/00547 ,  B81C2201/013 ,  G01C19/5733 ,  G01C19/5769

Abstract: An inertial sensor comprising a frame to which at least two seismic bodies are connected by resilient means so as to be movable in a suspension plane, and transducers to keep the seismic bodies vibrating and to determine a relative movement of the seismic bodies relative to one another, characterized in that the seismic bodies have a single shape and a single mass, and in that the seismic bodies comprise interlocking parts such that the seismic bodies are nested inside one another while being movable in the suspension plane relative to the other of the seismic bodies, with the seismic bodies having centers of gravity that coincide with one another. A method for manufacturing such a sensor.

公开(公告)号：US09624099B2

公开(公告)日：2017-04-18

申请号：US14966128

申请日：2015-12-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00 ,  H01P1/10

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20170050844A1

公开(公告)日：2017-02-23

申请号：US14827683

申请日：2015-08-17

Applicant: Texas Instruments Incorporated

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (101a), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom first metal seed film (131a) adhering to the substrate and a bottom second metal seed film (131b) adhering to the bottom first seed film, both seed films of a first width (131c) and a common sidewall (138); further a top first metal seed film (132a) adhering to the cap and a top second metal seed film (132b) adhering to the top first seed film, both seed films with a second width (132c) smaller than the first width and a common sidewall (139); the bottom and top metal seed films tied to a metal layer (135) including gold-indium intermetallic compounds, layer (135) having a second height (133a) greater than the first height and encasing the seed films and common sidewalls.

Abstract translation: 一种密封包装，其包括具有具有第一高度（101a）的MEMS结构（101）的表面的基底（110），所述基底被气密地密封到在所述MEMS结构上形成空腔的帽（120） 所述盖通过粘附到所述基板表面和所述盖的金属层的垂直堆叠（130）附接到所述基板表面，所述堆叠具有围绕所述MEMS结构的连续轮廓，同时与所述MEMS结构隔开距离（140）; 所述堆叠具有附着到所述基板的底部第一金属种子膜（131a）和粘附到所述底部第一种子膜的底部第二金属种子膜（131b），具有第一宽度（131c）和公共侧壁（138）的两种种子膜 ）; 另外，粘附到盖的顶部第一金属种子膜（132a）和粘附到顶部第一种子膜的顶部第二金属种子膜（132b），具有小于第一宽度的第二宽度（132c）的两种种子膜和共同的 侧壁（139）; 连接到包括金 - 铟金属间化合物的金属层（135）的底部和顶部金属种子膜，具有大于第一高度的第二高度（133a）的层（135）并且包围种子膜和共同侧壁。

公开(公告)号：US20170022054A1

公开(公告)日：2017-01-26

申请号：US15291599

申请日：2016-10-12

Applicant: INVENSENSE, INC.

Inventor： Julius Ming-Lin Tsai ,  Michael J. Daneman

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B7/007 ,  B81B3/0029 ,  B81B2201/032 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00182 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0792

Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

公开(公告)号：US20170022050A1

公开(公告)日：2017-01-26

申请号：US15005826

申请日：2016-01-25

Applicant: Sarah K. HANEY ,  Weng Hong TEH ,  Feras EID ,  Sasha N. OSTER

Inventor： Sarah K. HANEY ,  Weng Hong TEH ,  Feras EID ,  Sasha N. OSTER

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0041 ,  B81B7/0032 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00293 ,  B81C1/00539 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0136 ,  B81C2203/0792

Abstract: Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.

Abstract translation: 本发明的实施例描述了用于MEMS器件的气密封装和用于创建气密封装结构的工艺。 实施例包括进一步包括磁体的MEMS基板堆叠，第一层压有机介电膜，设置在磁体上的第一密封涂层，设置在密封涂层上的第二层压有机绝缘膜，设置在磁体上的MEMS器件层，以及 围绕MEMS器件层的多个金属互连。 密封板随后结合到MEMS衬底叠层并且设置在所形成的MEMS器件层上，以至少部分地形成围绕MEMS器件层的气密封装的腔体。 在各种实施例中，气密封装的空腔进一步由第一密封涂层形成，并且该组金属互连中的至少一个或沉积在该组金属互连件上的第二密封涂层。

公开(公告)号：US09546508B2

公开(公告)日：2017-01-17

申请号：US14825213

申请日：2015-08-13

Applicant: Raviv Erlich ,  Yuval Gerson

Inventor： Raviv Erlich ,  Yuval Gerson

IPC: E05D7/00 ,  E05D11/00 ,  B81B3/00 ,  B81C1/00 ,  E05D1/02 ,  G02B26/08

CPC classification number: F16C11/12 ,  B81B3/0043 ,  B81B2201/0235 ,  B81B2201/034 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0163 ,  B81C1/0015 ,  B81C1/00198 ,  B81C1/00523 ,  B81C2201/013 ,  E05D1/02 ,  E05D7/00 ,  E05D11/0081 ,  F16F1/48 ,  F16F2224/025 ,  F16F2226/00 ,  F16F2226/042 ,  G01C19/02 ,  G01P15/09 ,  G01P15/093 ,  G01P15/125 ,  G02B26/0833 ,  G02B26/105 ,  Y10T16/522 ,  Y10T16/525 ,  Y10T29/24 ,  Y10T29/25

Abstract: A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.

Abstract translation: 机械装置包括由刚性弹性材料制成的长而窄的元件。 刚性框架构造成锚固附接到框架的元件的至少一个端部并且限定沿着梁和框架之间的元件纵向延伸的间隙，使得元件在间隙内自由移动 。 与刚性弹性材料不同的固体填充材料填充元件和框架之间的间隙的至少一部分，以便允许元件在间隙内的第一移动模式，同时抑制不同的第二模式 运动。

公开(公告)号：US09533877B2

公开(公告)日：2017-01-03

申请号：US15098353

申请日：2016-04-14

Applicant: Innovative Micro Technology

Inventor： Benedikt Zeyen

IPC: H01L33/18 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0067 ,  B81B2201/0264 ,  B81B2201/047 ,  B81B2207/115 ,  B81C1/00317 ,  B81C3/001 ,  B81C2201/013 ,  B81C2201/0197 ,  B81C2203/031 ,  H01L24/00 ,  H04R19/02

Abstract: A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.

Abstract translation: 具有图案化电介质阻挡层和可氧化金属层的第一富离子电介质基片阳极结合到第二富离子电介质基片上。 为了结合基板，可氧化的金属层被氧化。 电介质阻挡层可以抑制这些离子迁移到粘结线，否则可能会损害粘结强度。 因此，当接合两个基板时，在晶片之间保持牢固的结合。

公开(公告)号：US20160318753A1

公开(公告)日：2016-11-03

申请号：US14699070

申请日：2015-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Yen Chou

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81B2203/0163 ,  B81B2207/012 ,  B81C1/00801 ,  B81C1/00952 ,  B81C2201/013 ,  B81C2201/014 ,  B81C2203/0792

Abstract: A method for manufacturing a microelectromechanical systems (MEMS) structure with sacrificial supports to prevent stiction is provided. A first etch is performed into an upper surface of a carrier substrate to form a sacrificial support in a cavity. A thermal oxidation process is performed to oxidize the sacrificial support, and to form an oxide layer lining the upper surface and including the oxidized sacrificial support. A MEMS substrate is bonded to the carrier substrate over the carrier substrate and through the oxide layer. A second etch is performed into the MEMS substrate to form a movable mass overlying the cavity and supported by the oxidized sacrificial support. A third etch is performed into the oxide layer to laterally etch the oxidized sacrificial support and to remove the oxidized sacrificial support. A MEMS structure with anti-stiction bumps is also provided.

Abstract translation: 提供了一种用于制造具有牺牲支撑以防止静摩擦的微机电系统（MEMS）结构的方法。 执行第一蚀刻到载体基板的上表面中以在空腔中形成牺牲支撑。 进行热氧化处理以氧化牺牲载体，并形成衬在上表面上并包括氧化牺牲载体的氧化物层。 MEMS衬底在载体衬底上并通过氧化物层结合到载体衬底。 执行第二蚀刻到MEMS衬底中以形成覆盖空腔并由氧化的牺牲支撑支撑的可移动质量。 执行第三蚀刻到氧化物层中以横向蚀刻氧化的牺牲载体并除去氧化的牺牲载体。 还提供了具有抗静电凸块的MEMS结构。

公开(公告)号：US20160264400A1

公开(公告)日：2016-09-15

申请号：US15158968

申请日：2016-05-19

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: B81B3/00 ,  B06B1/02 ,  G10K9/12 ,  B81C1/00

CPC classification number: B06B1/0292 ,  B06B1/02 ,  B81B3/0021 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2203/0118 ,  B81C2203/0735 ,  B81C2203/0771 ,  G10K9/12 ,  G10K11/18

Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

Abstract translation: 描述了CMOS超声波传感器及其制造方法。 所述方法可以包括在第一晶片上形成空腔并将第一晶片接合到第二晶片。 可以处理第二晶片以形成用于空腔的膜。 可以提供对腔的电接入。