Abstract:
The present invention concerns a quartz glass blank for an optical component for the transmission of ultraviolet radiation of a wave length of 250 nm and under, as well as its utilization in microlithography in connection with ultraviolet radiation of a wavelength of 250 nm and under. Such quartz glass blank is to have low induced absorption, while being optimized in respect of compaction and de-compaction. The quartz glass blank according to the invention has the following properties: A glass structure essentially free of oxygen defect sites; a H2 content in the range of 3×1017 molecules/cm3 to 2.0×1018 molecules/cm3; an OH content in the range of 500 weight ppm to 1000 weight ppm; a SiH group content of less than 2×1017 molecules/cm3; a chlorine content in the range of 60 weight ppm to 120 weight ppm; a refractive index inhomogeneity, Δn, of less than 2 ppm; and a stress birefringence of less than 2 nm/cm. For utilization according to the invention, the quartz glass blank—in respect of its minimum and maximum hydrogen content, CH2min and CH2max, as well as its OH content COH—is in accordance with the scaling laws (2), (3) and (4), and P standing for the pulse number and ε for the energy density: CH2min[molecules/cm3]=1.0×108ε2P , (2) CH2max[molecules/cm3]=2×1019ε, (3) COH[weight ppm]=1700ε[mJ/cm2]0.4±50 . (4)
Abstract:
First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.05 cm−1 or more, and the silica porous body was subjected to a reduction treatment, followed by baking, thereby forming a dense glass body.
Abstract:
Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02×1018 molecules/cm3 and about 0.18×1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.
Abstract:
An optical waveguide fiber or body having a doped outer region which can be utilized in an optical coupler, a preform which can serve as the precursor for the fiber, an optical coupler, and methods of making same. Water, for example in the form of H2O and/or D2O, may be added to the cladding of the optical waveguide fiber or body.
Abstract translation:具有可用于光耦合器中的掺杂外部区域的光波导纤维或主体,可用作光纤的前体的预成型件,光耦合器及其制造方法。 例如可以将H 2 O 2和/或D 2 O的形式的水添加到光波导纤维或体的包层中。
Abstract:
The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content ≦10 ppm, a F wt. % concentration ≧0.5 wt. %.
Abstract:
High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
Abstract translation:公开了适用于在190nm以下的VUV波长区域中用于光刻应用的光掩模基板的高纯度直接沉积玻璃化硅氧氟化物玻璃。 本发明的直接沉积玻璃化硅氧氟化物玻璃在157nm波长附近是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是在真空紫外(VUV)波长区域中显示非常高的透射率的干直接沉积玻璃化硅氧氟化物玻璃,同时保持通常与高纯度熔融二氧化硅相关的优异的热和物理性能。 除了含氟并且具有很少或不具有OH含量之外,本发明的适用于157nm的光掩模衬底的玻璃化玻璃化氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子 氢和低氯水平。
Abstract:
High purity synthetic quartz glass particles are derived from alkali metal silicate and have a total amount of metal impurities content of at least 1 nullg/g and, in particular, have oxygen-deficient defects. The high-purity synthetic quartz glass particles having high viscosity similar to natural quartz and high-purity similar to known synthetic quartz can be provided at a low cost.
Abstract:
High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content
Abstract translation:公开了具有优选氟含量<0.5重量%的氟氧化硅玻璃,适合用作光刻应用中的低于190nm的VUV波长区域的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃,其在真空紫外(VUV)波长区域中表现出非常高的透射率,同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不具有OH含量之外,本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低 氯水平。
Abstract:
A method of forming an alkali metal oxide-doped optical fiber by diffusing an alkali metal into a surface of a glass article is disclosed. The silica glass article may be in the form of a tube or a rod, or a collection of tubes or rods. The silica glass article containing the alkali metal, and impurities that may have been unintentionally diffused into the glass article, is etched to a depth sufficient to remove the impurities. The silica glass article may be further processed to form a complete optical fiber preform. The preform, when drawn into an optical fiber, exhibits a low attenuation.
Abstract:
Applicants have discovered the existence of loss peaks in optical fiber transmission systems using wavelengths in the E-band and the L-band. Specifically, they have discovered the existence of narrow loss peaks at 1440 nm, 1583 nm and 1614 nm. Because the peaks are relatively narrow, they cannot be easily removed by conventional gain equalizers in long haul transmission systems, and although the peaks are relatively small, they can nonetheless cause transmission channels to drop out in amplified DWDM transmission systems. Applicants have further discovered that these loss peaks are due to carbon contamination of the transmission fiber. Thus optical fibers should be fabricated essentially free of carbon contamination. This means eliminating carbon-containing reagents in preform and tube-making processes.