公开(公告)号：US20060197453A1

公开(公告)日：2006-09-07

申请号：US11355952

申请日：2006-02-17

Applicant: Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

Inventor： Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

IPC: H01K1/62

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/3045

Abstract: An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.

Abstract translation: 提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。 在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过 提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便 基于检测结果校正电子束的位置或偏转量。

公开(公告)号：US07005659B2

公开(公告)日：2006-02-28

申请号：US10885666

申请日：2004-07-08

Applicant: Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Masato Muraki ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J3/26 ,  H01J37/28 ,  G21K5/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174

Abstract: A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.

Abstract translation: 带电粒子束曝光装置具有光束整形光学系统，其形成发射带电粒子束的带电粒子源的图像，孔径阵列和静电透镜，其从带电粒子源的图像形成带电粒子源的多个图像 粒子源，还原电子光学系统，其将带电粒子源的多个图像减少并投影到晶片上;以及当束整形光学系统形成带电粒子源的图像以产生像散的第一标示器，以便校正 在还原电子光学系统中产生散光。 通过用带电粒子束扫描使基板曝光的带电粒子束曝光方法包括使基板上的带电粒子束的扫描方向的尺寸小于垂直于该方向的方向上的尺寸的调整步骤。

公开(公告)号：US06992307B2

公开(公告)日：2006-01-31

申请号：US10873250

申请日：2004-06-23

Applicant: Yoshikiyo Yui ,  Hiroya Ohta

Inventor： Yoshikiyo Yui ,  Hiroya Ohta

IPC: H01J29/70 ,  A61N5/00 ,  G21G5/00

CPC classification number: H01J37/065 ,  H01J2237/3175

Abstract: An electron gun is composed of a hemispherical cathode (1) and a second bias electrode (8) having apertures (9, 7, 11) along an optical axis of an electron beam fired from the electron gun, a first bias electrode (6) and an anode (10), arranged in that order, as well as a controller for variably controlling an electric potential applied to the first and second bias electrodes. The controller, for example, holds the sum of the electric potentials of the first and second bias electrodes relative to the cathode (1) substantially constant. Further, by adding one or more third bias electrode(s) (20) between the first and second bias electrodes (6, 8) as necessary, the intensity of the electron beam discharged from the high-intensity, high-emittance electron gun can be adjusted without affecting the current density angular distribution.

Abstract translation: 电子枪由半球形阴极（1）和具有沿着从电子枪发射的电子束的光轴上的孔（9,7,11）的第二偏置电极（8）组成，第一偏置电极（6） 和阳极（10），以及用于可变地控制施加到第一和第二偏置电极的电位的控制器。 例如，控制器保持第一和第二偏置电极相对于阴极（1）的电位的总和基本上恒定。 此外，通过根据需要在第一和第二偏置电极（6,8）之间添加一个或多个第三偏置电极（20），从高强度高发射电子枪放出的电子束的强度可以 在不影响电流密度角分布的情况下进行调整。

公开(公告)号：US06667486B2

公开(公告)日：2003-12-23

申请号：US10219769

申请日：2002-08-16

Applicant: Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin'ichi Hashimoto

Inventor： Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin'ichi Hashimoto

IPC: H01J3708

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/304 ,  H01J37/3177

Abstract: The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.

Abstract translation: 本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。 在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使 由多个电子束中的每一个形成的图案的图案数据的位置。

公开(公告)号：US5326979A

公开(公告)日：1994-07-05

申请号：US950689

申请日：1992-09-25

Applicant: Katsuhiro Kawasaki ,  Takashi Matsuzaka ,  Hiroya Ohta ,  Toshihiko Kohno

Inventor： Katsuhiro Kawasaki ,  Takashi Matsuzaka ,  Hiroya Ohta ,  Toshihiko Kohno

IPC: H01L21/027 ,  H01J37/302 ,  H01L21/30 ,  H01J37/256

CPC classification number: H01J37/3026

Abstract: An electron beam lithography system which generates phase shift pattern data relating to main patterns, and exposes the phase shift pattern on a mask plate by using an electron beam in accordance with instruction from a computer. An electron beam lithography system is provided which can remarkably decrease a time needed for preparing phase shift pattern data. The apparatus is furnished with a parameter table for storing equations to generate phase shift pattern data, and generates the phase shift pattern data by assigning original pattern data into equations in accordance with a corresponding instruction for applying a phase shift method, and automatically exposes the phase shift pattern.

Abstract translation: 一种电子束光刻系统，其产生与主图案相关的相移图案数据，并且根据来自计算机的指令通过使用电子束在掩模板上曝光相移图案。 提供了一种电子束光刻系统，其可以显着地减少准备相移图案数据所需的时间。 该装置具有用于存储方程式以产生相移模式数据的参数表，并且通过根据用于施加相移方法的相应指令将原始模式数据分配到等式中并生成相移模式数据，并且自动地将相位 移位模式

公开(公告)号：US08330103B2

公开(公告)日：2012-12-11

申请号：US12213905

申请日：2008-06-26

Applicant: Momoyo Enyama ,  Hiroya Ohta

Inventor： Momoyo Enyama ,  Hiroya Ohta

IPC: G01N23/00 ,  G21K7/00

CPC classification number: G01N23/22 ,  H01J37/28

Abstract: In a multi-charged-particle-beam apparatus, when an electric field and voltage on a surface of a specimen are varied according to characteristics of the specimen, a layout of plural primary beams on the surface of the specimen and a layout of plural secondary beams on each detector vary. Then, calibration is executed to adjust the primary beams on the surface of the specimen to an ideal layout corresponding to the variation of operating conditions including inspecting conditions such as an electric field on the surface and voltage applied to the specimen. The layout of the primary beams on the surface of the specimen is acquired as images displayed on a display of reference marks on the stage. Variance with an ideal state of the reference marks is measured based upon these images and is corrected by the adjustment of a primary electron optics system and others.

Abstract translation: 在多电荷粒子束装置中，当试样的表面的电场和电压根据试样的特性而变化时，试样表面上的多个主光束的布局和多个次级的布局 每个探测器上的光束变化。 然后，执行校准以将样品表面上的主光束调整为与包括诸如表面上的电场和施加到样本的电压的检查条件的操作条件的变化相对应的理想布局。 获取样品表面上的主光束的布局作为在舞台上的参考标记的显示器上显示的图像。 基于这些图像测量具有参考标记的理想状态的方差，并且通过一次电子光学系统等的调整来校正。

公开(公告)号：US08288722B2

公开(公告)日：2012-10-16

申请号：US12926489

申请日：2010-11-22

Applicant: Masaki Hasegawa ,  Hiroya Ohta

Inventor： Masaki Hasegawa ,  Hiroya Ohta

IPC: H01J37/26

CPC classification number: G01N23/225 ,  H01J37/026 ,  H01J37/285 ,  H01J37/29 ,  H01J2237/0047 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/2482 ,  H01J2237/2855

Abstract: An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.

Abstract translation: 电子束检查装置对反射电子进行成像并消除由电子束照射产生的负电荷。 照射紫外线，照射紫外线的区域作为光电子图像显示。 光电子图像和反射电子图像在彼此重叠的状态下显示在监视器上，以容易地掌握图像之间的位置关系和它们之间的尺寸差异。 具体地，电子束的照射区域的形状包括在显示屏上照射的紫外线区域的形状。 调整电子束的照射区域中的紫外线的强度，同时维持反射电子图像的反射电子成像条件。 此外，在监视器上控制紫外线量调节机构，使得在观察紫外线照射期间获得的反射电子图像的同时调节紫外线的量。

公开(公告)号：US08268209B2

公开(公告)日：2012-09-18

申请号：US11623776

申请日：2007-01-17

Applicant: Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

Inventor： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

IPC: H01L23/544

CPC classification number: H01L21/76838 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/7076 ,  G11B5/855 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.

Abstract translation: 在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。 此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

公开(公告)号：US08193493B2

公开(公告)日：2012-06-05

申请号：US13032050

申请日：2011-02-22

Applicant: Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

Inventor： Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

IPC: G01N23/00 ,  G01N23/225

CPC classification number: G01N23/225 ,  H01J37/265 ,  H01J37/28

Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

Abstract translation: 一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。 使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。 此外，优化了许多光学参数和设备参数。 此外，测量和调整所选择的一次光束的性质。

公开(公告)号：US20110272576A1

公开(公告)日：2011-11-10

申请号：US13143404

申请日：2010-01-04

Applicant: Hiroki Otaki ,  Momoyo Enyama ,  Hiroya Ohta

Inventor： Hiroki Otaki ,  Momoyo Enyama ,  Hiroya Ohta

IPC: G01N23/00

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G01R31/305 ,  H01J37/3023 ,  H01J2237/004 ,  H01J2237/0044

Abstract: Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.

Abstract translation: 提供了一种可实现的多束式带电粒子束施加装置，能够实现二次带电粒子的高检测精度和加工特性不同的试样的高速度。 孔径阵列（111）包括多个孔径图案。 用于选择主光束通过的孔径图案的偏转器（109）设置在电子枪（102）（即带电粒子源）与孔径阵列（111）之间产生的带电粒子源图像的位置处， 。 在充电控制光束照明时，在信号检测光束照射时，选择孔径阵列（111）的孔径图案，透镜阵列（112），表面电场控制电极（ 118）等与每个波束扫描同步地切换。 因此，控制电荷并且在合适的条件下分别在不同的定时检测信号。