公开(公告)号：US20160017492A1

公开(公告)日：2016-01-21

申请号：US14801348

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Alexandros T. DEMOS ,  Vu Ngoc Tran NGUYEN ,  Kelvin CHAN ,  He REN ,  Kang Sub YIM ,  Mehul B. NAIK

IPC: C23C16/48 ,  C23C16/40 ,  C23C16/505 ,  B01J19/12

CPC classification number: C23C16/482 ,  C23C16/401 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76829

Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.

Abstract translation: 本文所述的实施例提供了一种用于密封多孔低k电介质膜的方法。 该方法包括使用循环过程在多孔低k电介质膜上形成密封层。 循环过程包括重复在多孔低k电介质膜上沉积密封层的顺序并处理密封层，直到密封层达到预定厚度。 每个中间密封层的处理在每个中间密封层的表面上产生更多的反应性位点，这提高了所得密封层的质量。

公开(公告)号：US20150284849A1

公开(公告)日：2015-10-08

申请号：US14657627

申请日：2015-03-13

Applicant: Applied Materials, Inc.

Inventor： Kang Sub YIM ,  Taewan KIM ,  Alexandros T. DEMOS

IPC: C23C16/48 ,  C23C16/455 ,  C23C16/50 ,  C23C16/26

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68792

Abstract: Methods for making a low k porous dielectric film with improved mechanical strength are disclosed herein. A method of forming a dielectric layer can include delivering a deposition gas to a substrate in a processing chamber, the deposition gas comprising an acrylate precursor with a UV active side group and an oxygen containing precursor; activating the deposition gas to deposit an uncured carbon-containing layer on a surface of the substrate; and delivering UV radiation to the uncured carbon-containing layer to create a cured carbon-containing layer, the UV active side group crosslinking with a second group.

Abstract translation: 本文公开了制造具有改善的机械强度的低k多孔介电膜的方法。 形成电介质层的方法可以包括将沉积气体输送到处理室中的衬底，沉积气体包含具有UV活性侧基团和含氧前体的丙烯酸酯前体; 激活沉积气体以在基板的表面上沉积未固化的含碳层; 并向未固化的含碳层递送UV辐射以产生固化的含碳层，所述UV活性侧基与第二基团交联。

公开(公告)号：US20150232992A1

公开(公告)日：2015-08-20

申请号：US14623357

申请日：2015-02-16

Applicant: Applied Materials, Inc.

Inventor： Taewan KIM ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: C23C16/48 ,  C23C16/46 ,  C23C16/30 ,  C23C16/50

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348

Abstract: Embodiments of the present invention generally provide a method and apparatus for forming a low-k dielectric porous silicon oxycarbon layer within an integrated circuit. In one embodiment, a method is provided for depositing a porogen and bulk layer containing silicon oxycarbon layer, selectively removing the porogens from the formed layer without simultaneously cross-linking the bulk layer, and then cross-linking the bulk layer material. In other embodiments, methods are provided for depositing multiple silicon oxycarbon sublayers, selectively removing porogens from each sub-layer without simultaneously cross-linking the bulk material of the sub-layer, and separately cross-linking the sub-layers.

Abstract translation: 本发明的实施方案通常提供了用于在集成电路内形成低k电介质多孔硅氧化碳层的方法和装置。 在一个实施方案中，提供了一种用于沉积含有硅氧化碳层的致孔剂和本体层的方法，选择性地从成形层除去致孔剂，而不同时交联本体层，然后交联本体层材料。 在其它实施方案中，提供了用于沉积多个硅氧化碳亚层的方法，从每个子层选择性地除去致孔剂，而不同时交联子层的主体材料，以及分别交联子层。

公开(公告)号：US20150162189A1

公开(公告)日：2015-06-11

申请号：US14098428

申请日：2013-12-05

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Kelvin CHAN ,  Alexandros T. DEMOS

IPC: H01L21/02

CPC classification number: H01L21/02118 ,  C23C16/482 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6719

Abstract: Embodiments of the invention generally provide methods for sealing pores at a surface of a dielectric layer formed on a substrate. In one embodiment, the method includes exposing a dielectric layer formed on a substrate to a first pore sealing agent, wherein the first pore sealing agent contains a compound with a general formula CxHyOz, where x has a range of between 1 and 15, y has a range of between 2 and 22, and z has a range of between 1 and 3, and exposing the substrate to UV radiation in an atmosphere of the first pore sealing agent to form a first sealing layer on the dielectric layer.

Abstract translation: 本发明的实施方案通常提供了在形成在基底上的电介质层的表面处密封孔的方法。 在一个实施方案中，该方法包括将形成在基底上的电介质层暴露于第一孔密封剂，其中第一孔密封剂含有具有通式C x H y O z的化合物，其中x具有1至15的范围，y具有 在2和22之间的范围，z具有1和3之间的范围，并且在第一孔密封剂的气氛中将基底暴露于UV辐射，以在介电层上形成第一密封层。

公开(公告)号：US20140264780A1

公开(公告)日：2014-09-18

申请号：US14213038

申请日：2014-03-14

Applicant: Applied Materials, Inc.

Inventor： Kang Sub YIM ,  Pendar ARDALAN ,  Sure NGO ,  Alexandros T. DEMOS

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L29/06 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/7682 ,  H01L21/76829 ,  H01L2221/1047

Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.

Abstract translation: 本发明的实施例提供了一种薄膜堆叠和用于沉积低介电常数体积层的粘合剂层的方法，而不需要起始层。 用于半导体器件的薄膜叠层包括直接沉积在下层上的双层低K电介质。 双低K电介质由不含无碳的起始层沉积的粘合剂层组成。

公开(公告)号：US20160296981A1

公开(公告)日：2016-10-13

申请号：US15180514

申请日：2016-06-13

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC: B08B7/00 ,  B08B5/00 ,  C23C16/48 ,  C23C16/44 ,  C23C16/455 ,  B08B9/08 ,  B08B17/02

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20160172239A1

公开(公告)日：2016-06-16

申请号：US14943913

申请日：2015-11-17

Applicant: Applied Materials, Inc.

Inventor： Deenesh PADHI ,  Yihong CHEN ,  Kelvin CHAN ,  Abhijit Basu MALLICK ,  Alexandros T. DEMOS ,  Mukund SRINIVASAN

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5329 ,  C23C16/30 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a process chamber; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas comprising a nitrogen-containing gas, a hydrogen containing gas, or combinations thereof; delivering the reactant gas to the process gas to create a deposition gas that deposits a silicon and aluminum containing layer on the substrate; and purging the process region. The above elements can be performed one or more times to deposit an etch stop stack.

Abstract translation: 本文描述的实施方案一般涉及形成含硅和铝的层。 本文所述的方法可以包括将基底定位在处理室的处理区域中; 将工艺气体输送到所述工艺区域，所述工艺气体包括含铝气体和含硅气体; 活化包含含氮气体，含氢气体或其组合的反应气体; 将反应气体输送到工艺气体以产生在衬底上沉积含硅和铝的层的沉积气体; 并清除过程区域。 可以执行上述元件一次或多次以沉积蚀刻停止叠层。

公开(公告)号：US20160133489A1

公开(公告)日：2016-05-12

申请号：US14589990

申请日：2015-01-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Karthik JANAKIRAMAN ,  Abhijit Basu MALLICK ,  Hari K. PONNEKANTI ,  Mandyam SRIRAM ,  Alexandros T. DEMOS ,  Mukund SRINIVASAN ,  Juan Carlos ROCHA-ALVAREZ ,  Dale R. DUBOIS

IPC: H01L21/67 ,  C23C16/458 ,  H01L21/687 ,  C23C14/58 ,  C23C14/50 ,  B05C13/00 ,  C23C16/56

CPC classification number: H01L21/67207 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67213 ,  H01L21/67709 ,  H01L21/6776

Abstract: An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.

Abstract translation: 本文描述了一种用于在包含沉积室，处理室和隔离区域的处理系统中处理衬底的装置和方法，将沉积室与处理分离。 沉积室在基板上沉积膜。 处理室从沉积室接收衬底并且利用膜性质改变装置改变沉积在沉积室中的膜。 根据上述实施例和其他实施例提供处理系统和方法。

公开(公告)号：US20160099167A1

公开(公告)日：2016-04-07

申请号：US14505731

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Taewan KIM ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: H01L21/764 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02312 ,  H01L21/7682 ,  H01L21/76885 ,  H01L2221/1047

Abstract: Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include depositing a carbon containing stack over one or more features in a substrate, depositing a porous dielectric layer over the carbon containing stack, and curing the substrate to volatilize the carbon containing stack. The resulting device includes a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.

Abstract translation: 本文公开了使用气隙降低层的k值的方法和由所述方法制造的装置。 本文公开的方法可以包括在衬底中的一个或多个特征上沉积含碳堆叠，在含碳堆叠之上沉积多孔介电层，以及固化衬底以使含碳堆叠挥发。 所得到的器件包括其中形成有一个或多个特征的衬底，在特征上形成的多孔介电层，其中形成有特征中的气隙。

公开(公告)号：US20160020090A1

公开(公告)日：2016-01-21

申请号：US14799988

申请日：2015-07-15

Applicant: Applied Materials, Inc.

Inventor： Kang Sub YIM ,  Mahendra CHHABRA ,  Kelvin CHAN ,  Alexandros T. DEMOS ,  Priyanka DASH

IPC: H01L21/02

CPC classification number: H01L21/02203 ,  H01L21/02126 ,  H01L21/0272 ,  H01L21/3105

Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.

Abstract translation: 本文描述的实施方案一般涉及用UV能量处理衬底上的电介质膜的方法。 在一个实施方案中，前体膜沉积在基底上，并且前体膜包括多个致孔剂分子。 首先在第一温度下将前体膜暴露于UV能以引发交联过程。 在第一预定时间之后，将前体膜的温度升至第二温度第二预定时间以除去致孔剂分子并继续进行交联过程。 所得膜是具有改善的弹性模量和硬度的多孔低k电介质膜。