公开(公告)号：US20230317458A1

公开(公告)日：2023-10-05

申请号：US17887292

申请日：2022-08-12

Applicant: Applied Materials, Inc.

Inventor： Kai WU ,  Xi CEN ,  Dixiong WANG ,  Yang LI ,  Peiqi WANG

IPC: H01L21/285 ,  C23C16/56 ,  C23C16/455 ,  C23C16/50 ,  C23C16/08

CPC classification number: H01L21/28568 ,  C23C16/56 ,  C23C16/45553 ,  C23C16/50 ,  C23C16/08

Abstract: A method of forming an interconnect structure over a substrate includes forming a nucleation layer over a surface of the substrate. The surface of the substrate comprises a plurality of openings, and the process of forming the nucleation layer includes (a) exposing the substrate to a tungsten-containing precursor gas to form a tungsten-containing layer over a surface of each of the plurality of openings, (b) exposing the formed tungsten-containing layer to an etchant gas, wherein exposing the tungsten-containing layer to the etchant gas etches at least a portion of the tungsten-containing layer disposed at a top region of each of the plurality of openings, and repeating (a) and (b) one or more times. The method further includes forming a bulk layer over the formed nucleation layer.

公开(公告)号：US20230023235A1

公开(公告)日：2023-01-26

申请号：US17477413

申请日：2021-09-16

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Yun TAEWOONG ,  Shirish A. PETHE ,  Kai WU ,  Nobuyuki SASAKI ,  Wei LEI

IPC: H01L21/768

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of filling a feature in a substrate includes: depositing a seed layer of tungsten nitride in the feature via a physical vapor deposition (PVD) process; depositing a liner layer of tungsten on the seed layer of tungsten nitride in the feature via a PVD process; and subsequently filling the feature with a tungsten bulk fill via a chemical vapor deposition (CVD) process.

公开(公告)号：US20210335586A1

公开(公告)日：2021-10-28

申请号：US16855496

申请日：2020-04-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Tom H. YU ,  Wei Min CHAN ,  Peiqi WANG ,  Kai WU ,  Adolph Miller ALLEN ,  Kazuya DAITO

IPC: H01J37/32 ,  B08B5/00 ,  B08B7/00

Abstract: Methods and apparatus for cleaning a showerhead are provided. For example, the methods includes moving a substrate support including a heater disposed therein from a substrate processing position a first distance away from the showerhead to a cleaning position a second distance away from the showerhead, wherein the second distance is less than the first distance; heating the showerhead using the heater disposed in the substrate support to a predetermined temperature; at least one of supplying at least one cleaning gas to the processing chamber to form a plasma or supplying the plasma from a remote plasma source; and providing a predetermined pressure within an inner volume of the processing chamber and maintaining the plasma within the inner volume of the processing chamber while heating the showerhead to the predetermined temperature.

公开(公告)号：US20190157145A1

公开(公告)日：2019-05-23

申请号：US16252100

申请日：2019-01-18

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Feiyue MA ,  Yu LEI ,  Kai WU ,  Mehul B. NAIK ,  Zhiyuan WU ,  Vikash BANTHIA ,  Hua AI

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L23/522

Abstract: Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.

公开(公告)号：US20150076110A1

公开(公告)日：2015-03-19

申请号：US14028099

申请日：2013-09-16

Applicant: Applied Materials, Inc.

Inventor： Kai WU ,  Sang Ho YU ,  Kie Jin PARK ,  Glen T. MORI ,  Joshua COLLINS

IPC: C23F4/00 ,  H01J37/32

CPC classification number: C23F4/00 ,  C23G5/00 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02068

Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

Abstract translation: 本文描述的实施例通常提供了一种用于执行半导体预清洗处理的方法。 更具体地，本文提供的实施方案涉及用于氧化铝蚀刻增强的硼电离。 从铝中除去天然氧化物的方法可以单独使用电离硼或与卤素等离子体组合使用。 电离硼可以提供改进的氧化铝蚀刻性质，同时更通常地对天然氧化物具有高选择性。

公开(公告)号：US20140326276A1

公开(公告)日：2014-11-06

申请号：US14255443

申请日：2014-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Kai WU ,  Bo ZHENG ,  Sang Ho YU ,  Avgerinos V. GELATOS ,  Bhushan N. ZOPE ,  Jeffrey ANTHIS ,  Benjamin SCHMIEGE

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  B08B9/00 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

Abstract translation: 本文描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不想要的沉积累积的方法和装置。 在一个实施方式中，提供了在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除含钴或钴的沉积物的方法。 该方法包括从含氟清洗气体混合物中形成反应性物质，使反应物质与钴和/或含钴沉积物反应形成气态氟化钴，并将氟化氢以气态吹扫出来 基板处理室。

公开(公告)号：US20240282631A1

公开(公告)日：2024-08-22

申请号：US18419526

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Yao XU ,  Yang LI ,  Meng ZHU ,  Insu HA ,  Jianqiu GUO ,  Chao LI ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/76879 ,  H01L21/02068 ,  H01L21/28568 ,  H01L21/76843

Abstract: A method of filling a via having a necking point includes performing a pre-clean process to remove residues from an exposed surface of a metal layer at a bottom of a via and recover inner surfaces of the via, wherein the via is formed within a dielectric layer and has a necking point protruding within the via, performing a selective deposition process to partially fill the via with metal fill material from the exposed surface of the metal layer below the necking point, performing a liner deposition process to form a liner layer on exposed inner surfaces of the via, and performing a metal fill process to fill the via with the metal fill material.

公开(公告)号：US20240222128A1

公开(公告)日：2024-07-04

申请号：US18558388

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Mingrui ZHAO ,  Peiqi WANG ,  Kai WU ,  Harpreet SINGH ,  Michael C. KUTNEY

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC classification number: H01L21/28506 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/52 ,  H01L21/76879

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process. The processing system is configured to periodically condition the first radial generator by forming a plasma of a relatively low amount of a halogen-based gas.

公开(公告)号：US20240014072A1

公开(公告)日：2024-01-11

申请号：US18212352

申请日：2023-06-21

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han YANG ,  Zhimin QI ,  Yongqian GAO ,  Rongjun WANG ,  Yi XU ,  Yu LEI ,  Xingyao GAO ,  Chih-Hsun HSU ,  Xi CEN ,  Wei LEI ,  Shiyu YUE ,  Aixi ZHANG ,  Kai WU ,  Xianmin TANG

IPC: H01L21/768 ,  H01J37/32

CPC classification number: H01L21/76879 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32422 ,  H01J2237/2001 ,  H01J37/321 ,  H01J2237/332

Abstract: A method of forming a semiconductor device structure includes forming a nucleation layer within at least one feature. The method includes exposing the nucleation layer to a nitrogen plasma treatment. The nitrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal growth.

公开(公告)号：US20230130756A1

公开(公告)日：2023-04-27

申请号：US17508581

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Srinivas Tokur MOHANA ,  Sandesh YADAMANE ,  Kai WU ,  Jallepally RAVI ,  Xiaozhou YU ,  Peiqi WANG

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687

Abstract: Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.