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    NANOFABRICATION USING A NEW CLASS OF ELECTRON BEAM INDUCED SURFACE PROCESSING TECHNIQUES
    12.
    发明申请
    NANOFABRICATION USING A NEW CLASS OF ELECTRON BEAM INDUCED SURFACE PROCESSING TECHNIQUES 审中-公开
    使用新类型的电子束诱导表面处理技术的纳米制备

    公开(公告)号：US20170073814A1

    公开(公告)日：2017-03-16

    申请号：US14851962

    申请日：2015-09-11

    Applicant: FEI Company

    Inventor： James Bishop ,  Toan Trong Tran ,  Igor Aharonovich ,  Charlene Lobo ,  Milos Toth

    IPC: C23C16/48

    Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

    Abstract translation: 描述了基于电子束诱导的衬底表面化学变化的直接光刻图案定义的方法和系统。 该方法涉及对于指定表面化学（SC）的全局定义的初始化学处理。 然后使用气态前体和表面之间的电子束诱导表面反应来局部改变SC。 因此可以实现在衬底上稳定的指定表面化学物质的高分辨率图案化。 然后可以通过利用某些SC组合的特异性或通过表面能的差异的方法将限定的图案用于选择性材料沉积。 可以在不破坏真空的情况下原位执行所有步骤。

    GAS-ASSISTED LASER ABLATION
    16.
    发明申请
    GAS-ASSISTED LASER ABLATION 审中-公开
    气体辅助激光消除

    公开(公告)号：US20140054267A1

    公开(公告)日：2014-02-27

    申请号：US13969892

    申请日：2013-08-19

    Applicant: FEI Company

    Inventor： Milos Toth ,  Marcus Straw

    IPC: B23K26/12

    CPC classification number: B29C35/08 ,  B23K26/0624 ,  B23K26/12 ,  B23K26/126 ,  B23K26/127 ,  B23K26/16 ,  B23K26/36 ,  B41M5/24

    Abstract: An improved method for laser processing that prevents material redeposition during laser ablation but allows material to be removed at a high rate. In a preferred embodiment, laser ablation is performed in a chamber filled with high pressure precursor (etchant) gas so that sample particles ejected during laser ablation will react with the precursor gas in the gas atmosphere of the sample chamber. When the ejected particles collide with precursor gas particles, the precursor is dissociated, forming a reactive component that binds the ablated material. In turn, the reaction between the reactive dissociation by-product and the ablated material forms a new, volatile compound that can be pumped away in a gaseous state rather than redepositing onto the sample.

    Abstract translation: 一种改进的激光加工方法，可防止激光烧蚀过程中的材料再沉积，但可以高速率去除材料。 在优选实施例中，在填充有高压前体（蚀刻剂）气体的室中进行激光烧蚀，使得在激光烧蚀期间喷射的样品颗粒将与样品室的气体气氛中的前体气体反应。 当喷射的颗粒与前体气体颗粒碰撞时，前体解离，形成结合烧蚀材料的反应性组分。 反过来，反应性离解副产物与消融材料之间的反应形成一种新的挥发性化合物，其可以以气态泵送而不是重新沉积在样品上。

    High Resolution Plasma Etch
    17.
    发明申请
    High Resolution Plasma Etch 审中-公开
    高分辨率等离子体蚀刻

    公开(公告)号：US20130192758A1

    公开(公告)日：2013-08-01

    申请号：US13669195

    申请日：2012-11-05

    Applicant: FEI Company

    Inventor： Milos Toth ,  Noel Smith

    IPC: B05C21/00

    CPC classification number: B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

    Abstract: An apparatus for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

    Abstract translation: 一种用于制造微观结构的装置，其使用诸如光束诱导的前体分解的光束过程，以精确图案沉积掩模，然后选择性等离子体束，包括以下步骤：首先创建保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且其次使用选择性等离子体束蚀刻工艺来蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对地选择的等离子体束工艺进行。

    Nanofabrication using a new class of electron beam induced surface processing techniques
    19.
    发明授权
    Nanofabrication using a new class of electron beam induced surface processing techniques 有权

    公开(公告)号：US11377740B2

    公开(公告)日：2022-07-05

    申请号：US16709312

    申请日：2019-12-10

    Applicant: FEI Company

    Inventor： James Bishop ,  Toan Trong Tran ,  Igor Aharonovich ,  Charlene Lobo ,  Milos Toth

    IPC: C23C16/04 ,  C23C16/48 ,  H01J37/317

    Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

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