公开(公告)号：US12261231B2

公开(公告)日：2025-03-25

申请号：US17751189

申请日：2022-05-23

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/05 ,  H01L31/18

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US20230082682A1

公开(公告)日：2023-03-16

申请号：US17801093

申请日：2021-02-19

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/58 ,  C23C14/50 ,  C23C14/22 ,  H01G9/20 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US11502212B2

公开(公告)日：2022-11-15

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US20200343402A1

公开(公告)日：2020-10-29

申请号：US16956366

申请日：2018-12-20

Applicant: First Solar, Inc.

Inventor： Paul King ,  Xiaoping Li ,  Roger Malik ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/103 ,  H01L31/0296 ,  H01L31/18

Abstract: According to the embodiments provided herein, a photovoltaic device can have an energy side configured to be exposed to a light source. The photovoltaic device can include an absorber layer. The absorber layer can include a first surface facing the energy side and a thickness defined between the first surface and a second surface. The absorber layer can include mercury having a mole fraction y, cadmium having a mole fraction (1−y), and tellurium. The mole fraction y of the mercury can vary through the thickness of the absorber layer with distance from the first surface of the absorber layer.

公开(公告)号：US20250029792A1

公开(公告)日：2025-01-23

申请号：US18906018

申请日：2024-10-03

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C14/58 ,  H01G9/20 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/16 ,  H10K85/30

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US12112897B2

公开(公告)日：2024-10-08

申请号：US17801093

申请日：2021-02-19

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C14/58 ,  H01G9/20 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/16 ,  H10K85/30

CPC classification number: H01G9/0036 ,  C23C14/0694 ,  C23C14/228 ,  C23C14/50 ,  C23C14/5806 ,  H01G9/2009 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/164 ,  H10K85/30

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US11791427B2

公开(公告)日：2023-10-17

申请号：US17509710

申请日：2021-10-25

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20210376177A1

公开(公告)日：2021-12-02

申请号：US17287988

申请日：2019-10-23

Applicant: First Solar, Inc.

Inventor： Le Chen ,  Sachit Grover ,  Jason Kephart ,  Sergei Kniajanski ,  Chungho Lee ,  Xiaoping Li ,  Feng Liao ,  Dingyuan Lu ,  Rajni Mallick ,  Wenming Wang ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/073 ,  H01L31/0296

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.