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公开(公告)号：US08829549B2
公开(公告)日：2014-09-09
申请号：US13687120
申请日：2012-11-28
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Chih-Ling Wu , Yu-Yun Lo , Po-Jen Su
CPC classification number: H01L33/60 , H01L33/20 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/641 , H01L2224/16
Abstract: A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading.
Abstract translation: 提供了包括第一掺杂层，发光层，第二掺杂层和衬底的发光二极管。 多个第一凹槽穿过第二掺杂层和发光层。 因此，暴露第一掺杂层的部分表面。 多个第一凹槽中的至少一个延伸到第二涂料层和发光层的边缘。 绝缘层设置在第二掺杂层的一部分上并延伸到第一凹槽的侧壁。 第一接触件设置在第一凹槽中并电连接至第一掺杂层。 第二接触设置在第二掺杂层上并电连接到第二掺杂层。 通过第一凹槽，第一接触可以电连接到第一掺杂层以改善电流扩展。
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12.发明申请METHOD OF FORMING LIGHT EMITTING DIODE DIES, LIGHT EMITTING DIODE WAFER AND LIGHT EMITTING DIODE DIE 有权形成发光二极管，发光二极管和发光二极管的方法公开(公告)号：US20140103367A1
公开(公告)日：2014-04-17
申请号：US13835367
申请日：2013-03-15
Applicant: GENESIS PHOTONICS INC.
Inventor： Cheng-Hung Lin , Yu-Yun Lo , Cheng-Yen Chen , Yu-Hung Lai
CPC classification number: H01L33/36 , H01L27/15 , H01L33/005 , H01L33/0095 , H01L2933/0025
Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.
Abstract translation: 一种形成发光二极管管芯的方法包括：形成在衬底晶片的前表面上限定发光单元的外延层状结构; 在所述衬底晶片的背面上形成光致抗蚀剂层; 对准衬底晶片并图案化光致抗蚀剂层以在光致抗蚀剂层中形成开口，每个开口具有小于相应发光单元的投影面积的面积; 在光致抗蚀剂层上形成焊料层，使得焊料层填充光致抗蚀剂层中的开口; 从衬底晶片去除光致抗蚀剂层和覆盖光致抗蚀剂层的焊料层的一部分; 并切割衬底晶片。
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公开(公告)号：US20190237627A1
公开(公告)日：2019-08-01
申请号：US16384871
申请日：2019-04-15
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
IPC: H01L33/40
CPC classification number: H01L33/405 , H01L33/42
Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.
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公开(公告)号：US20180190882A1
公开(公告)日：2018-07-05
申请号：US15908762
申请日：2018-02-28
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Kuan-Yung Liao , Yi-Ru Huang , Yu-Yun Lo
CPC classification number: H01L33/505 , H01L33/486 , H01L33/50 , H01L33/54 , H01L33/58
Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.
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公开(公告)号：US09577154B2
公开(公告)日：2017-02-21
申请号：US14535333
申请日：2014-11-07
Applicant: Genesis Photonics Inc.
Inventor： Yu-Yun Lo , Yi-Fan Li , Chih-Ling Wu , Yi-Ru Huang , Jing-En Huang , Shao-Ying Ting
Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.
Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。
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Patent Agency Ranking
公开(公告)号：US20160293809A1
公开(公告)日：2016-10-06
申请号：US15175019
申请日：2016-06-06
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Kuan-Yung Liao , Yi-Ru Huang , Yu-Yun Lo
CPC classification number: H01L33/505 , H01L33/486 , H01L33/50 , H01L33/54 , H01L33/58
Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.
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公开(公告)号：US20160079496A1
公开(公告)日：2016-03-17
申请号：US14943036
申请日：2015-11-17
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Shao-Ying Ting , Kuan-Yung Liao , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
Abstract: A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees.
Abstract translation: 发光二极管封装结构包括封装载体，导光部件和发光单元。 导光部件设置在封装载体上。 发光单元设置在相对远离封装载体的导光部件的上表面上。 导光部件的水平投影面积大于发光部件的水平投影面积。 发光单元适于发射光束，并且光束的一部分进入导光部件并从导光部件的上表面发射。 存在于光束与上表面的法线方向之间的夹角为0度〜75度。
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公开(公告)号：US20160043281A1
公开(公告)日：2016-02-11
申请号：US14919693
申请日：2015-10-21
Applicant: Genesis Photonics Inc.
Inventor： Yu-Yun Lo , Yi-Ru Huang , Chih-Ling Wu , Tzu-Yang Lin , Yun-Li Li
CPC classification number: H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2224/14 , H01L2933/0016
Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.
Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。
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公开(公告)号：US20150103556A1
公开(公告)日：2015-04-16
申请号：US14513210
申请日：2014-10-14
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Jing-En Huang , Pei-Hsin Chen , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
IPC: F21V8/00
CPC classification number: F21K9/61 , F21Y2115/10
Abstract: A package carrier is suitable for carrying at least one light emitting unit. The package carrier includes an annular shell and a transparent light guiding stage. The annular shell has a cavity. The transparent light guiding stage is disposed in the cavity of the annular shell. The light emitting unit is adapted to be disposed on the transparent light guiding stage, and a horizontal projection area of the transparent light guiding stage is greater than that of the light emitting unit. The light emitting unit emits a light beam to enter the transparent light guiding stage, and the light beam emits from a surface of the transparent light guiding stage relatively distant from the cavity.
Abstract translation: 包装载体适用于承载至少一个发光单元。 包装载体包括环形壳和透明导光级。 环形壳体具有空腔。 透明导光台设置在环形壳体的空腔中。 发光单元适于设置在透明导光台上，并且透明导光台的水平投影区域大于发光单元的水平投影区域。 发光单元发射光束进入透明光引导台，并且光束从相对远离空腔的透明导光台的表面发射。
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公开(公告)号：US20150102379A1
公开(公告)日：2015-04-16
申请号：US14513228
申请日：2014-10-14
Applicant: Genesis Photonics Inc.
Inventor： Yun-Li Li , Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.
Abstract translation: 发光二极管结构包括基板和发光单元。 基板具有突出部和导光部。 突出部和导光部之间具有无缝连接，突出部的水平投影面积小于导光部的水平投影面积。 发光单元设置在基板的突出部分上。 发光单元适于发射光束，并且光束的一部分从突出部分进入导光部分，并且从未被突出部分覆盖的导光部分的上表面发射。
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