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    MEMS elements with integrated porous membranes and method of making the same
    13.
    发明授权
    MEMS elements with integrated porous membranes and method of making the same 有权
    集成多孔膜的MEMS元件及其制造方法

    公开(公告)号：US06613241B1

    公开(公告)日：2003-09-02

    申请号：US09699116

    申请日：2000-10-27

    Applicant: Axel Scherer ,  Theodore Doll ,  Michael Hochberg

    Inventor： Axel Scherer ,  Theodore Doll ,  Michael Hochberg

    IPC: B44C122

    CPC classification number: B01D67/0086 ,  B01D67/0065 ,  B01D71/025 ,  B81B2201/10 ,  B81C1/00158 ,  B81C2201/0109 ,  B81C2201/053 ,  B81C2203/032 ,  C25D11/045 ,  Y10T428/24331 ,  Y10T428/24926

    Abstract: The invention is a method of introducing porous membranes into MEMS elements by supporting the membranes by frames to form an heterostructure. This is achieved by attaching to a structured or porous substrate one or more monolithically fabricated frames and membranes. Having membranes disposed on frames enables them to be batch processed and facilitates separation, handling and mounting within MEMS or nanofluidic systems. Applications include, but are not limited to, filters for gases or liquids, electron transmissive windows and scanning electron microscopy (SEM) accessible arrays of nanotest tubes containing liquid phases and other sample states. The invention includes the apparatus made by the method.

    Abstract translation: 本发明是通过框架支撑膜以形成异质结构而将多孔膜引入MEMS元件的方法。 这通过将一个或多个整体制造的框架和膜附接到结构化或多孔基底来实现。 将膜放置在框架上使得它们能够被批量处理，并且有助于在MEMS或纳米流体系统中的分离，处理和安装。 应用包括但不限于用于气体或液体的过滤器，电子透射窗和扫描电子显微镜（SEM）可访问的纳米级管，其包含液相和其他样品状态的阵列。 本发明包括通过该方法制造的装置。

    Process for manufacturing a micromechanical structure having a buried area provided with a filter
    16.
    发明授权
    Process for manufacturing a micromechanical structure having a buried area provided with a filter 有权
    具有设置有过滤器的掩埋区域的微机械结构的制造方法

    公开(公告)号：US09061248B1

    公开(公告)日：2015-06-23

    申请号：US14133290

    申请日：2013-12-18

    Applicant: STMicroelectronics S.r.l.

    Inventor： Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

    IPC: H01L21/00 ,  B01D67/00 ,  B01D71/02 ,  B01L3/00 ,  F04B19/00

    CPC classification number: B81C1/00119 ,  B01D67/0062 ,  B01D71/02 ,  B01D2325/021 ,  B01D2325/028 ,  B01L3/502707 ,  B01L3/502753 ,  B01L2300/0681 ,  B81B2201/10 ,  B81C1/00071 ,  B81C1/00087 ,  B81C2201/0133 ,  B81C2201/0157 ,  F04B19/006

    Abstract: A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.

    Abstract translation: 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面的部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。

    Process for manufacturing a micromechanical structure having a buried area provided with a filter
    17.
    发明授权
    Process for manufacturing a micromechanical structure having a buried area provided with a filter 有权
    具有设置有过滤器的掩埋区域的微机械结构的制造方法

    公开(公告)号：US08633553B2

    公开(公告)日：2014-01-21

    申请号：US13190254

    申请日：2011-07-25

    Applicant: Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

    Inventor： Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

    IPC: H01L29/84 ,  H01L21/00

    CPC classification number: B81C1/00119 ,  B01D67/0062 ,  B01D71/02 ,  B01D2325/021 ,  B01D2325/028 ,  B01L3/502707 ,  B01L3/502753 ,  B01L2300/0681 ,  B81B2201/10 ,  B81C1/00071 ,  B81C1/00087 ,  B81C2201/0133 ,  B81C2201/0157 ,  F04B19/006

    Abstract: A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.

    Abstract translation: 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。

    Method For Manufacturing A Membrane In A (111) Surface Of A (100) Silicon Wafer
    20.
    发明申请
    Method For Manufacturing A Membrane In A (111) Surface Of A (100) Silicon Wafer 审中-公开
    在（100）硅晶片的（111）表面中制造膜的方法

    公开(公告)号：US20080020579A1

    公开(公告)日：2008-01-24

    申请号：US10550384

    申请日：2004-03-22

    Applicant: Warner Jurrien Venstra

    Inventor： Warner Jurrien Venstra

    IPC: H01L21/311

    CPC classification number: B81C1/0015 ,  B81B2201/10 ,  B81B2201/12 ,  B81B2203/019 ,  B81C1/00158 ,  B81C2201/0132

    Abstract: The invention relates to a method for the fabrication of a membrane oriented in a (111) plane of a (100) silicon wafer. To this end the method comprises the following steps: applying a mask to both sides of the wafer, wherein portions of the sides are covered by the mask; and the at least partial removal by etching away silicon material from the portions of the two sides of the wafer that are not covered. This method is characterised in that the etching step substantially removes the silicon material forming recesses in the two surfaces of the wafer, such that the walls of the recesses are formed by (111) planes, and in that not covered portions at both sides of the wafer are aligned in relation to one another such that a (111) plane is formed and the distance d between said two planes is less than the thickness of the silicon wafer, so as to form a membrane in the (111) plane having a thickness d. Such a membrane has many application possibilities in the field of MEMS, for example by dividing the membrane into individual cantilevers.

    Abstract translation: 本发明涉及一种用于制造在（100）硅晶片的（111）面中取向的膜的方法。 为此，该方法包括以下步骤：将掩模施加到晶片的两侧，其中边的部分被掩模覆盖; 以及通过从未覆盖的晶片的两侧的部分蚀刻掉硅材料来进行至少部分去除。 该方法的特征在于，蚀刻步骤基本上去除晶片的两个表面中的形成硅材料的凹槽，使得凹部的壁由（111）面形成，并且在该两面的不覆盖部分 晶片相对于彼此对准，使得形成（111）面并且所述两个平面之间的距离d小于硅晶片的厚度，以便在（111）面中形成具有厚度的膜 d。 这种膜在MEMS领域具有许多应用可能性，例如通过将膜分成单独的悬臂。

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