公开(公告)号：US20160358776A1

公开(公告)日：2016-12-08

申请号：US13686058

申请日：2012-11-27

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Jed W. Pitera ,  Hsinyu Tsai

IPC: H01L21/033 ,  B81B7/00 ,  H01L21/768 ,  H01L21/311 ,  B81C1/00

CPC classification number: G03F7/0002 ,  B81B7/0006 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0035 ,  G03F7/165 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144

Abstract: After formation of a template layer over a neutral polymer layer, a self-assembling block copolymer material is applied and self-assembled. The template layer includes a first linear portion, a second linear portion that is shorter than the first linear portion, and blocking template structures having a greater width than the second linear portion. The self-assembling block copolymer material is phase-separated into alternating lamellae in regions away from the widthwise-extending portion. The blocking template structures perturb, and cause termination of, the lamellae. A cavity parallel to the first and second linear portions and terminating in self-alignment to the blocking template structures is formed upon selective removal of a polymeric block component. The pattern of the cavity can be inverted and transferred into the material layer to form fins having different lengths.

Abstract translation: 在中性聚合物层上形成模板层之后，自组装嵌段共聚物材料被应用并自组装。 模板层包括第一直线部分，比第一直线部分短的第二直线部分，以及阻挡具有比第二直线部分更大的宽度的模板结构。 自组装嵌段共聚物材料在远离宽度方向延伸部分的区域中相分离成交替的薄片。 阻挡模板结构扰乱并导致薄片的终止。 在选择性去除聚合物嵌段组分时，形成平行于第一和第二直线部分并终止于与阻挡模板结构自对准的空腔。 空腔的图案可以反转并转移到材料层中以形成具有不同长度的翅片。

公开(公告)号：US09495991B2

公开(公告)日：2016-11-15

申请号：US14419616

申请日：2013-09-09

Applicant: LG CHEM, LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Yang Kyoo Han ,  Je Gwon Lee ,  Hyun Jin Lee ,  No Ma Kim ,  Sung Soo Yoon ,  Eun Ji Shin ,  Yeon Sik Jung

IPC: G11B5/855 ,  H01L21/3065 ,  G03F7/00 ,  G11B5/84 ,  G11B5/851 ,  H01L21/027 ,  G11B5/74 ,  B81C1/00 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/18 ,  C08F220/56

CPC classification number: G11B5/855 ,  B81C1/00396 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/18 ,  C08F220/56 ,  C08F2438/03 ,  G03F7/0002 ,  G11B5/746 ,  G11B5/8404 ,  G11B5/851 ,  H01L21/027 ,  H01L21/3065

Abstract: The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same.The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern.

Abstract translation: 形成氧化硅纳米图案的方法包括以下步骤：在基材的氧化硅上形成包含特定硬链段和含有（甲基）丙烯酸酯基重复单元的软链段的嵌段共聚物薄膜; 导电薄膜的取向; 从嵌段共聚物薄膜中选择性地除去软链段; 并使用去除了软链段的嵌段共聚物薄膜作为掩模进行氧化硅的反应离子蚀刻，以形成氧化硅纳米点或纳米孔图案。

公开(公告)号：US09458353B1

公开(公告)日：2016-10-04

申请号：US14687834

申请日：2015-04-15

Applicant: International Business Machines Corporation

Inventor： Joy Cheng ,  Anindarupa Chunder ,  Daniel P. Sanders ,  Melia Tjio ,  Ankit Vora

IPC: C09D169/00 ,  C09D125/08 ,  C08L69/00 ,  C08L25/08 ,  C08G64/18 ,  C08F220/22 ,  H01L21/3105 ,  H01L21/308 ,  H01L21/02 ,  C09D133/16 ,  C09D127/12 ,  B81C1/00

CPC classification number: C08F220/68 ,  B81C1/00523 ,  B81C2201/0149 ,  C08F12/20 ,  C08F12/22 ,  C08F212/08 ,  C08F212/14 ,  C08F220/04 ,  C08F2438/01 ,  C08G64/18 ,  C08G64/183 ,  C08L25/08 ,  C08L69/00 ,  C09D125/08 ,  C09D125/18 ,  C09D127/12 ,  C09D133/16 ,  C09D169/00 ,  G03F7/0002 ,  H01L21/0271 ,  C08F2220/281 ,  C08F2220/325 ,  C08F2220/283 ,  C08F220/14 ,  C08F220/24

Abstract: A film layer comprising a high-chi (χ) block copolymer for self-assembly and a surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a styrene-based block). The SAP comprises a hydrophobic fluorinated first repeat unit and a non-fluorinated second repeat unit bearing at least one pendent OH group present as an alcohol or acid (e.g., carboxylic acid). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.

Abstract translation: 在自组装嵌段共聚物的畴上中性润湿的基材表面上制备包含用于自组装的高岐（χ）嵌段共聚物和表面活性聚合物（SAP）的薄膜层。 嵌段共聚物包含至少一个聚碳酸酯嵌段和至少一个其它嵌段（例如基于苯乙烯的嵌段）。 SAP包含疏水性氟化第一重复单元和带有作为醇或酸（例如羧酸）存在的至少一个侧挂OH基团的非氟化第二重复单元。 其顶表面与大气接触的膜层自组装形成相对于下面的表面具有垂直取向的层状或圆柱形区域图案。 使用缺少SAP的薄膜获得其他形态（例如高度为1.0Lo的岛和孔）。 SAP优选与包含聚碳酸酯嵌段的结构域混溶并降低其表面能。

公开(公告)号：US09450154B2

公开(公告)日：2016-09-20

申请号：US14244460

申请日：2014-04-03

Applicant: Cheng-Sheng Tsung

Inventor： Cheng-Sheng Tsung ,  Shih-Hao Chuang

IPC: H01L31/0216 ,  H01L29/788 ,  H01L51/52 ,  H01L51/56 ,  G02B1/10 ,  H01L33/60 ,  H01L33/44 ,  B81C1/00 ,  G02B5/00 ,  G01N21/01

CPC classification number: H01L33/44 ,  B81C1/00031 ,  B81C2201/0149 ,  G01N21/01 ,  G01N2201/02 ,  G02B5/008 ,  H01L33/60 ,  H01L2933/0058

Abstract: A method for fabricating a microstructure to generate surface plasmon waves comprises steps of: preparing a substrate, and using a carrier material to carry a plurality of metallic nanoparticles and letting the metallic nanoparticles undertake self-assembly to form a microstructure on the substrate, wherein the metallic nanoparticles are separated from each other or partially agglomerated to allow the microstructure to be formed with a discontinuous surface. The present invention fabricates the microstructure having the discontinuous surface by a self-assembly method to generate the surface plasmon waves, thus exempts from using the expensive chemical vapor deposition (CVD) technology and is able to reduce the time and cost of fabrication. The present invention also breaks the structural limitation on generation of surface plasmon waves to enhance the effect of generating the surface plasmon waves.

Abstract translation: 用于制造微结构以产生表面等离子体激元波的方法包括以下步骤：制备基底，并使用载体材料携带多个金属纳米颗粒并使金属纳米粒子进行自组装以在基底上形成微结构，其中 金属纳米颗粒彼此分离或部分团聚以允许微结构形成不连续表面。 本发明通过自组装方法制造具有不连续表面的微结构以产生表面等离子体波，从而免除使用昂贵的化学气相沉积（CVD）技术，并且能够减少制造的时间和成本。 本发明还破坏了表面等离子体激元波的产生的结构限制，以增强产生表面等离子体波的效果。

公开(公告)号：US09410020B2

公开(公告)日：2016-08-09

申请号：US14373553

申请日：2013-01-28

Applicant: CARNEGIE MELLON UNIVERSITY

Inventor： Krzysztof Matyjaszewski ,  Michael Bockstaller

IPC: C08L33/12 ,  C08J3/02 ,  B81C1/00 ,  C08J3/00 ,  C08L25/06 ,  C08G83/00 ,  C08L101/00 ,  B82Y30/00

CPC classification number: C08J3/02 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08G83/003 ,  C08J3/005 ,  C08J2325/06 ,  C08J2333/12 ,  C08L25/06 ,  C08L33/12 ,  C08L101/005 ,  C08L2205/025

Abstract: A method of forming a composition includes adding together a plurality of particle brush systems wherein each of the particle brush systems includes a particle and a polymer brush including a plurality of polymer chains attached to the particle. The plurality of polymer chains of the polymer brush exhibit two chain conformations as the degree of polymerization of the polymer chains increases so that the polymer brush includes a concentrated polymer brush region with stretched polymer chains and a semi-dilute polymer brush region with relaxed chains that is radially outside of the concentrated polymer brush region. The degree of polymerization of the polymer brush is no less than 10% less than a critical degree of polymerization and no more than 20% greater than the critical degree of polymerization. The critical degree of polymerization is defined as the degree of polymerization required to achieve a transition from the concentrated polymer brush region to the semi-dilute polymer brush region.

Abstract translation: 形成组合物的方法包括将多个颗粒刷系统加入到其中，其中每个颗粒刷系统包括颗粒和包含附着到颗粒上的多个聚合物链的聚合物刷。 当聚合物链的聚合度增加时，聚合物刷的多个聚合物链表现出两个链构象，使得聚合物刷包括具有拉伸聚合物链的浓缩聚合物刷区域和具有松弛链的半稀释聚合物刷区域 位于浓缩聚合物刷区域的径向外侧。 聚合物刷的聚合度不低于临界聚合度的10％且不低于临界聚合度的20％以上。 临界聚合度定义为实现从浓缩聚合物刷区域到半稀释聚合物刷涂区域的转变所需的聚合度。

公开(公告)号：US09355865B2

公开(公告)日：2016-05-31

申请号：US14617174

申请日：2015-02-09

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Cheng-Hsiung Tsai ,  Chung-Ju Lee ,  Tsung-Jung Tsai ,  Yu-Sheng Chang

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  B81C1/00 ,  H01L21/308 ,  H01L29/02 ,  H01L21/306 ,  H01L21/324

CPC classification number: H01L21/32139 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/324 ,  H01L29/02

Abstract: One or more techniques or systems for forming a pattern during semiconductor fabrication are provided herein. In some embodiments, a photo resist (PR) region is patterned and a spacer region is formed above or surrounding at least a portion of the patterned PR region. Additionally, at least some of the spacer region and the patterned PR region are removed to form one or more spacers. Additionally, a block co-polymer (BCP) is filled between the spacers. In some embodiments, the BCP comprises a first polymer and a second polymer. In some embodiments, the second polymer is removed, thus forming a pattern comprising the first polymer and the spacers. In this manner, a method for forming a pattern during semiconductor fabrication is provided, such that a width of the spacer or the first polymer is controlled.

公开(公告)号：US20160137799A1

公开(公告)日：2016-05-19

申请号：US14897441

申请日：2014-06-13

Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLC

Inventor： Antonio Checco ,  Charles T. Black ,  Atikur Rahman ,  Benjamin M. Ocko

IPC: C08J7/12 ,  H01J37/32 ,  C08J7/06

CPC classification number: H01L21/3086 ,  B81C1/00111 ,  B81C2201/0149 ,  G02B1/118 ,  G02B1/18 ,  G03F7/0002 ,  G03F7/405 ,  H01J2237/334 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3065

Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.

Abstract translation: 描述了用于蚀刻衬底中的纳米结构的方法和系统的技术。 所述方法可以包括在衬底上沉积图案化的嵌段共聚物。 该方法可以包括将前体施加到图案化的嵌段共聚物上以产生渗透的嵌段共聚物。 前体可能渗入第一聚合物嵌段结构域并产生一种材料。 所述方法可以包括将有效去除聚合物嵌段结构域的去除剂施加到渗透的嵌段共聚物以产生该材料的图案。 该方法可以包括蚀刻衬底。 材料的图案可以掩盖衬底以图案化蚀刻。 蚀刻可以在衬底中产生纳米结构的条件下进行。 该方法可以包括去除材料的图案并用疏水涂层涂覆纳米结构和基底的表面。

公开(公告)号：US09269388B2

公开(公告)日：2016-02-23

申请号：US14673471

申请日：2015-03-30

Applicant: Seagate Technology LLC

Inventor： Shuaigang Xiao ,  XiaoMin Yang

IPC: G11B5/84 ,  B05D5/00 ,  B05D1/32 ,  B05D3/06 ,  B81C1/00 ,  B82Y10/00 ,  G11B5/74 ,  G11B5/82 ,  G11B5/855 ,  G11B5/596 ,  B05D3/00

CPC classification number: G11B5/84 ,  B05D1/322 ,  B05D3/00 ,  B05D3/06 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  G03F7/0002 ,  G11B5/59633 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B5/855 ,  Y10T428/24802

Abstract: A substrate having an arrangement of self-assembling magnetic domains and a method of fabrication therefor. In some embodiments, a substrate is patterned with a plurality of chemically contrasted alignment features, and a block copolymer having a magnetic component and a non-magnetic component is deposited onto the substrate. The block copolymer self-assembles into a sequence of magnetic domains responsive to the alignment features. The period of the alignment features is between about 2 times and about 10 times the period of the magnetic domains.

Abstract translation: 具有自组装磁畴布置的基板及其制造方法。 在一些实施例中，用多个化学对比的对准特征图案化基底，并且将具有磁性成分和非磁性成分的嵌段共聚物沉积在基底上。 嵌段共聚物自组装成响应于对准特征的一系列磁畴。 对准特征的周期是磁畴周期的约2倍至约10倍。

公开(公告)号：US09230820B2

公开(公告)日：2016-01-05

申请号：US14707315

申请日：2015-05-08

Applicant: HGST Netherlands B.V.

Inventor： Ricardo Ruiz ,  Lei Wan

IPC: G03F7/26 ,  H01L21/308 ,  H01L21/027 ,  C09D153/00 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/3086 ,  B81C1/00031 ,  B81C2201/0149 ,  C09D153/00 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/0272 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/31058 ,  H01L21/31138

Abstract: A method for directed self-assembly (DSA) of block copolymers (BCPs) uses a BCP blend with a small portion of functional homopolymers, called “inks”, before deposition and annealing of the BCP. A substrate has a patterned sublayer formed on it. The BCP blend is deposited on the patterned sublayer and annealed. The BCP blend is guided by the sublayer pattern. The inks selectively distribute into blocks, and part of the inks graft on the substrate underneath the blocks. The BCP blend layer is rinsed away, leaving the grafted inks. The grafted inks form a chemical contrast pattern that has the same geometry with the BCP bulk morphology. This process is repeated, which results in the grafted inks forming a thicker and denser chemical contrast pattern. This chemical contrast pattern of grafted inks is used for the DSA of a BCP that self-assembles as lamellae perpendicular to the substrate.

Abstract translation: 嵌段共聚物（BCP）的定向自组装（DSA）的方法在BCP的沉积和退火之前使用具有少量功能均聚物的BCP共混物，称为“油墨”。 衬底上形成有图案化的子层。 将BCP共混物沉积在图案化的子层上并退火。 BCP混合物由子层图案引导。 油墨选择性地分配到块中，并且部分油墨移植到块下面的基底上。 将BCP混合层冲洗掉，留下接枝的油墨。 接枝油墨形成与BCP体积形态具有相同几何形状的化学对比图案。 重复该过程，这导致接枝油墨形成更浓且更致密的化学对比度图案。 接枝油墨的这种化学对比图案用于自组装成垂直于衬底的薄片的BCP的DSA。

公开(公告)号：US20150375262A1

公开(公告)日：2015-12-31

申请号：US14845488

申请日：2015-09-04

Applicant: Thomas P. Russell ,  Sung Woo Hong ,  Dong Hyun Lee ,  Soojin Park ,  Ting Xu

Inventor： Thomas P. Russell ,  Sung Woo Hong ,  Dong Hyun Lee ,  Soojin Park ,  Ting Xu

IPC: B05D3/04

CPC classification number: B05D3/0466 ,  B05D3/0254 ,  B05D3/10 ,  B05D3/107 ,  B05D5/02 ,  B81C1/00031 ,  B81C1/00055 ,  B81C1/00063 ,  B81C1/00071 ,  B81C1/00079 ,  B81C2201/0149 ,  G03F7/0002 ,  Y10T428/24521

Abstract: A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.

Abstract translation: 通过包括在基板表面上形成具有平行小面的嵌段共聚物膜，并且使嵌段共聚物膜退火以形成退火的嵌段共聚物膜的方法形成具有高程度的高程度的线图案的嵌段共聚物膜 具有平行于衬底表面并且垂直于衬底的平行面的线性微区域。 线图案化的嵌段共聚物膜可用于制造磁存储介质，偏振装置和纳米线阵列。