公开(公告)号：US20230358607A1

公开(公告)日：2023-11-09

申请号：US18223277

申请日：2023-07-18

Applicant: Hamamatsu Photonics K.K.

Inventor： Takuya FUJITA ,  Yusei Tamura ,  Kenji Makino ,  Takashi Baba ,  Koel Yamamoto

IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

CPC classification number: G01J1/44 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/107 ,  G01J2001/442 ,  G01J2001/4466

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US11788883B2

公开(公告)日：2023-10-17

申请号：US17163271

申请日：2021-01-29

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Nir Yahav ,  Robert Jan Visser ,  Adi de la Zerda

IPC: G01J1/04 ,  H10N60/85 ,  H10N60/01 ,  G01J1/44

CPC classification number: G01J1/0437 ,  H10N60/0801 ,  H10N60/85 ,  G01J2001/0496 ,  G01J2001/442

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconductive wire on the seed layer. The distributed Bragg reflector includes a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material. The wire is a metal nitride different from the metal nitride of the seed material.

公开(公告)号：US11778926B2

公开(公告)日：2023-10-03

申请号：US17883508

申请日：2022-08-08

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L21/67 ,  H10N60/01 ,  C23C14/54 ,  C23C14/34 ,  H10N60/12 ,  H10N60/85 ,  G01J1/44

CPC classification number: H10N60/0941 ,  C23C14/3464 ,  C23C14/54 ,  H10N60/124 ,  H10N60/855 ,  G01J1/44 ,  G01J2001/442

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US20230304857A1

公开(公告)日：2023-09-28

申请号：US18011394

申请日：2021-04-07

Applicant: NANJING UNIVERSITY

Inventor： Labao ZHANG ,  Rui YIN ,  Biao ZHANG ,  Qi CHEN ,  Jiayu LV ,  Rui GE ,  Lin KANG ,  Peiheng WU

IPC: G01J1/44 ,  H10N60/83

CPC classification number: G01J1/44 ,  H10N60/83 ,  G01J2001/442 ,  G01J2001/4446 ,  G01J2001/444

Abstract: The present invention discloses a design for reducing a dark count rate of a superconducting nanowire single photon detector (SNSPD) based on a two-wire structure, which includes: intertwining two niobium nitride nanowires that are not crossed to form an SNSPD of a two-wire structure; regulating and controlling behaviors of one nanowire by adopting the other nanowire, and regulating bias current to be close to superconducting critical current; introducing an optical signal into a photosensitive area of the detector by adopting an optical fiber; outputting two channels of signals respectively through the two nanowires to make the dark count rates of the two nanowires mutually excited; and through a voltage comparator and an exclusive-OR gate, reducing a dark count rate signal, and retaining a photon response signal. The generation of the dark count rate of the detector can be inhibited effectively by the unique performance of the SNSPD of the two-wire structure; and by improving the process latter, the coupling efficiency of the dark count rate of the SNSPD is further improved, which is expected to completely inhibit the dark count rate of the SNSPD system and greatly increase the signal-to-noise ratio of the detector.

公开(公告)号：US11747451B2

公开(公告)日：2023-09-05

申请号：US17369982

申请日：2021-07-08

Applicant: Guangzhou Tyrafos Semiconductor Technologies Co., LTD

Inventor： Ping-Hung Yin ,  Jia-Shyang Wang

IPC: G01S7/4865 ,  G01S7/481 ,  G01S17/10 ,  G01S7/484 ,  G01J1/44 ,  G01S17/14 ,  G01S7/4863 ,  G04F10/00 ,  H01L27/144 ,  H01L31/107 ,  H01L27/146

CPC classification number: G01S7/4865 ,  G01J1/44 ,  G01S7/484 ,  G01S7/4814 ,  G01S7/4816 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/14 ,  G04F10/005 ,  H01L27/1446 ,  H01L27/14609 ,  H01L31/107 ,  G01J2001/442 ,  G01J2001/444 ,  G01J2001/448 ,  G01J2001/4466

Abstract: A light sensor and its calibration method are provided. The light sensor includes a light source, a sensing sub-pixel, and a control circuit. The light source emits a sensing light beam. The sensing sub-pixel includes a diode, a quenching resistor, and a time-to-digital converter. The diode has a first terminal coupled to an operation voltage. The quenching resistor is coupled between a second terminal of the diode and a ground voltage. The time-to-digital converter is coupled to the second terminal of the diode. The control circuit is coupled to the sensing sub-pixel and calibrates a sensing sensitivity of the sensing sub-pixel according to at least one of a photon detection probability, an internal gain value, and a resistance value of the quenching resistor corresponding to the diode of the sensing sub-pixel, so that the sensing sub-pixel generates a single-photon avalanche diode sensing signal only when receiving the sensing light beam.

公开(公告)号：US20230266163A1

公开(公告)日：2023-08-24

申请号：US17264844

申请日：2020-11-30

Applicant: TIANJIN UNIVERSITY

Inventor： Xiaolong HU ,  Yun MENG ,  Kai ZOU ,  Nan HU ,  Liang XU

IPC: G01J1/44

CPC classification number: G01J1/44 ,  G01J2001/442 ,  B82Y15/00

Abstract: The present invention discloses a superconducting nanowire single photon detector, comprises an arced fractal nanowire structure and the optical cavity structure; the arced fractal nanowire structures being used to alleviate the current-crowding effect and realize that the detection efficiency is insensitive to the polarization states of incident photons, and the arced fractal nanowire structures including parallel-connected arced fractal nanowires and serial-connected arced fractal nanowires; the optical cavity structure being used to achieve simultaneous optimization of the internal quantum efficiency and the absorption efficiency. The invention can be widely used in many fields such as optical communication, single-photon imaging, fluorescence detection, quantum optics, etc. The excellent performance of the detector can significantly promote the development and progress of these fields.

公开(公告)号：US20230175886A1

公开(公告)日：2023-06-08

申请号：US17920054

申请日：2021-04-23

Applicant: LEICA MICROSYSTEMS CMS GMBH

Inventor： Holger Birk ,  Frank Hecht ,  Luis Alvarez ,  Bernd Widzgowski

IPC: G01J1/44 ,  G01N21/64 ,  G02B21/00

CPC classification number: G01J1/44 ,  G01N21/6408 ,  G01N21/6458 ,  G02B21/0076 ,  G02B21/0084 ,  G01J2001/442

Abstract: An apparatus is configured to count N-photon events within a time-dependent sequence of events of interactions of a plurality of photons with a light sensitive detector. The apparatus includes a signal-processing device and the light sensitive detector. An N-photon event represents an occurrence of at least N timely overlapping single photon events. The light sensitive detector is adapted to generate a time-dependent digital signal comprising digital patterns representing the time-dependent sequence of events from the detection of the plurality of photons with the light sensitive detector. Each digital pattern in the digital signal comprises a digital pattern width having a continuous sequence of digital values representing at least one event of interaction of at least one photon with the light sensitive detector. The signal-processing device is adapted to identify N-photon events from the digital patterns in the digital signal in dependence from the respective digital pattern width.

公开(公告)号：US20180328783A1

公开(公告)日：2018-11-15

申请号：US15775600

申请日：2016-11-04

Applicant: Sony Semiconductors Solutions Corporation

Inventor： Toshiyuki Nishihara ,  Keniichi Okumura

IPC: G01J1/44 ,  G01T1/20 ,  G01T1/15 ,  G01T1/208 ,  H04N5/3745 ,  H04N5/32

CPC classification number: G01J1/44 ,  G01J1/02 ,  G01J2001/442 ,  G01J2001/4466 ,  G01T1/15 ,  G01T1/20 ,  G01T1/2018 ,  G01T1/208 ,  H04N5/32 ,  H04N5/3745 ,  H04N5/37455

Abstract: The present technology relates to an optical pulse detection device, an optical pulse detection method, a radiation counter device, and a biological testing device which are capable of performing radiation counting in a more accurate manner. The optical pulse detection device includes a pixel array unit in which a plurality of pixels are arranged in a two-dimensional lattice shape, an AD converter that converts output signals of each of the pixels in the pixel array unit into digital values with gradation greater than 1 bit, and an output control circuit that performs error determination processing of comparing the digital value with a predetermined threshold value, and discarding a digital value, which is greater than the threshold value, among the digital values as an error. For example, the present technology is applicable to a radiation counter device, and the like.

公开(公告)号：US09927539B2

公开(公告)日：2018-03-27

申请号：US15613998

申请日：2017-06-05

Applicant: General Electric Company

Inventor： Arie Shahar ,  Mark David Fries ,  Yaron Glazer ,  Avishai Ofan

IPC: H01L27/146 ,  G01T7/00 ,  G01T1/24 ,  G01T1/29

CPC classification number: G01T7/005 ,  G01J1/4228 ,  G01J2001/442 ,  G01T1/249 ,  G01T1/2928

Abstract: A radiation detector assembly is provided that includes a semiconductor detector having a surface, plural pixelated anodes, and at least one processor. The pixelated anodes are disposed on the surface. Each pixelated anode is configured to generate a primary signal responsive to reception of a photon by the pixelated anode and to generate at least one secondary signal responsive to an induced charge caused by reception of a photon by at least one adjacent anode. The at least one processor is operably coupled to the pixelated anodes. The at least one processor configured to define sub-pixels for each pixelated anode; acquire signals corresponding to acquisition events from the pixelated anodes; determine sub-pixel locations for the acquisition events using the signals; and apply at least one calibration parameter on a per sub-pixel basis for the acquisition events based on the determined sub-pixel locations.

公开(公告)号：US20180031420A1

公开(公告)日：2018-02-01

申请号：US15551915

申请日：2016-02-24

Applicant: Leica Microsystems CMS GmbH

Inventor： Marcus Dyba

IPC: G01J1/44 ,  G01J3/02 ,  G01J3/28 ,  G02B21/00 ,  H01L31/107

CPC classification number: G01J1/44 ,  G01J1/42 ,  G01J3/0297 ,  G01J3/2803 ,  G01J2001/4406 ,  G01J2001/442 ,  G01J2001/444 ,  G01J2001/4466 ,  G02B21/008 ,  H01L31/107

Abstract: A method for improving dynamic range of a device for detecting light includes providing at least two detection regions. The detection regions are each formed by an array of a plurality of single-photon avalanche diodes (SPADs) and the detection regions each comprise at least one signal output. A characteristic curve is determined for each of the detection regions. The characteristic curves are combined with one another and/or offset against one another in order to obtain a correction curve and/or a correction factor.