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    BEAM LINE SYSTEM OF ION IMPLANTER
    11.
    发明申请
    BEAM LINE SYSTEM OF ION IMPLANTER 有权
    离子植入物的束线系统

    公开(公告)号：US20130009075A1

    公开(公告)日：2013-01-10

    申请号：US13177621

    申请日：2011-07-07

    Applicant: Boon-Chau TONG

    Inventor： Boon-Chau TONG

    IPC: G21K5/10

    CPC classification number: H01J37/3171 ,  H01J37/16 ,  H01J2237/0268 ,  H01J2237/028 ,  H01J2237/31703 ,  H01J2237/31705

    Abstract: A beam line system includes a hollow tube and a plurality of protruding structures. The hollow tube has an inlet and an outlet. An ion beam emitted by the ion implanter is introduced into the hollow tube through the inlet and exited from the hollow tube through the outlet. The protruding structures are formed on an inner wall of the hollow tube. Each of the protruding structures has a reflective surface for reflecting a portion of the ion beam.

    Abstract translation: 束线系统包括中空管和多个突出结构。 中空管具有入口和出口。 由离子注入机发射的离子束通过入口引入中空管，并通过出口从中空管中排出。 突出结构形成在中空管的内壁上。 每个突出结构具有用于反射离子束的一部分的反射表面。

    POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS
    13.
    发明申请
    POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS 有权
    用于离子植入系统的后胶磁能过滤器

    公开(公告)号：US20090321630A1

    公开(公告)日：2009-12-31

    申请号：US12477631

    申请日：2009-06-03

    Applicant: Geoffrey Ryding ,  Theodore Smick ,  Marvin Farley ,  Takao Sakase ,  Bo Vanderberg

    Inventor： Geoffrey Ryding ,  Theodore Smick ,  Marvin Farley ,  Takao Sakase ,  Bo Vanderberg

    IPC: B01D59/44 ,  A61N5/00 ,  H01J37/08

    CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J2237/0492 ,  H01J2237/103 ,  H01J2237/1405 ,  H01J2237/1501 ,  H01J2237/1523 ,  H01J2237/153 ,  H01J2237/21 ,  H01J2237/24528 ,  H01J2237/31705

    Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

    Abstract translation: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法，其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析，其中选择离子。 一旦离子束被质量分析，离子束然后通过减速器减速，并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供，其中形成磁场以截取离开减速器的离子束中的离子，以选择性地过滤不需要的离子和快速中性粒子。

    Ion implantation ion source, system and method
    15.
    发明授权
    Ion implantation ion source, system and method 失效
    离子注入离子源，系统和方法

    公开(公告)号：US07479643B2

    公开(公告)日：2009-01-20

    申请号：US11174107

    申请日：2005-07-01

    Applicant: Thomas Neil Horsky

    Inventor： Thomas Neil Horsky

    IPC: H01J27/02

    CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

    Abstract: The ionization chamber is defined by a removable block disposed in heat transfer relationship to a temperature controlled mounting block, preferably the removable block comprised of graphite, silicon carbide or aluminum. The ion source includes a mounting flange for joining the ion source to the housing of an ion implanter, the ionization chamber being located on the inside of the mounting flange and the vaporizer being removably mounted to the exterior of the mounting flange via at least one isolation valve which is separable from the mounting flange with the vaporizer, enabling the vaporizer charge volume to be isolated by the valve in closed position during handling, preferably there being two isolation valve in series, one unified with and transportable with a removed vaporizer unit, and one constructed to remain with and isolate the remainder of the ion source from the atmosphere. In certain preferred embodiments, two such vaporizers are provided, enabling one to be absent, while being charged or serviced, while the other operates, or enabling two different materials to be vaporized without maintenance of the ion source, or enabling additional quantities of the same materials to be present to enable a protracted implant run.

    Abstract translation: 电离室由与温度控制的安装块的热传递关系设置的可移除的块限定，优选地由石墨，碳化硅或铝组成的可移除块。 离子源包括用于将离子源连接到离子注入机的壳体的安装凸缘，电离室位于安装凸缘的内侧，并且蒸发器通过至少一个隔离件可拆卸地安装到安装凸缘的外部 阀，其与安装法兰与蒸发器分离，使得蒸发器充气体积在处理期间由阀处于闭合位置隔离，优选地具有两个串联的隔离阀，一个与已移除的蒸发器单元统一并且可移除的隔离阀，以及 一个被构造为留下离子源的剩余部分并与之隔离。 在某些优选实施例中，提供了两个这样的蒸发器，使得一个在被充电或维修的同时被放置，而另一个操作时，或者使得两个不同的材料在不维护离子源的情况下蒸发，或使得能够附加数量相同 存在的材料能够延长植入物运行。

    Contamination reduction during ion implantation
    16.
    发明申请
    Contamination reduction during ion implantation 失效
    离子注入过程中污染减少

    公开(公告)号：US20080230724A1

    公开(公告)日：2008-09-25

    申请号：US11728020

    申请日：2007-03-23

    Applicant: Russell John Low

    Inventor： Russell John Low

    IPC: G21K5/04

    CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31705

    Abstract: A method includes generating an ion beam having ions at a first charge state, accelerating the ions at the first charge state to a final energy, altering the first charge state to a second charge state for some of said ions, the second charge state less than the first charge state, providing an ion beam having ions at the second charge state and parasitic beamlets having ions at a charge state different than the second charge state, directing the ion beam having ions at the second charge state towards a wafer, and directing the parasitic beamlets away from the wafer. An ion implanter having a charge exchange apparatus is also provided.

    Abstract translation: 一种方法包括产生具有处于第一充电状态的离子的离子束，将处于第一充电状态的离子加速到最终能量，将一些所述离子的第一充电状态改变为第二充电状态，第二充电状态小于 第一充电状态，提供具有处于第二充电状态的离子的离子束和具有不同于第二充电状态的充电状态的离子的寄生子束，将具有处于第二充电状态的离子的离子束引向晶片，并引导 寄生的子束远离晶片。 还提供了具有电荷交换装置的离子注入机。

    ELECTROSTATIC PARTICLE GETTERING IN AN ION IMPLANTER
    18.
    发明申请
    ELECTROSTATIC PARTICLE GETTERING IN AN ION IMPLANTER 审中-公开
    离子植入物中的静电颗粒捕获

    公开(公告)号：US20070187618A1

    公开(公告)日：2007-08-16

    申请号：US11674413

    申请日：2007-02-13

    Applicant: Robert Dolan

    Inventor： Robert Dolan

    IPC: A61N5/00

    CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/022 ,  H01J2237/31705 ,  H01L21/265 ,  H01L21/3221

    Abstract: Methods and apparatus are disclosed for removing particles from an ion implantation chamber by introducing at least one sacrificial wafer into the implanter and subjecting it to ion implantation. As the sacrificial wafer is exposed to the ion beam, it becomes charged. Particles present in the implantation chamber are then drawn to a charged wafer surface by electrostatic forces. The sacrificial wafer thus serves as a gettering element, attracting and capturing particulates from the surrounding environment.

    Abstract translation: 公开了通过将至少一个牺牲晶片引入注入机并对其进行离子注入来从离子注入室去除颗粒的方法和装置。 当牺牲晶片暴露于离子束时，它被充电。 存在于植入室中的颗粒然后通过静电力被吸引到带电的晶片表面。 牺牲晶片因此用作吸气元件，吸引和捕获来自周围环境的微粒。

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