公开(公告)号：US20230298885A1

公开(公告)日：2023-09-21

申请号：US18185625

申请日：2023-03-17

Applicant: ASM IP Holding, B.V.

Inventor： Ranjit Borude ,  Shinya Yoshimoto ,  Makoto Igarashi ,  Jhoelle Roche Guhit ,  Pamarti Viswanath

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02348 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02222 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32357 ,  H01J2237/332 ,  H01J37/32733

Abstract: Methods and related systems for at least partially filling recesses comprised in a substrate with a gap filling fluid. The gap filling fluid comprises a Si—N bond. The methods comprise exposing the substrate to a nitrogen and hydrogen-containing gas on the one hand and to vacuum ultraviolet light on the other hand.

公开(公告)号：US20230282460A1

公开(公告)日：2023-09-07

申请号：US18196438

申请日：2023-05-12

Applicant: Tokyo Electron Limited

Inventor： Shigeru ISHIZAWA

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32807 ,  B08B7/0035 ,  H01J37/32642 ,  H01J37/32862 ,  H01J37/32899

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

公开(公告)号：US20230246624A1

公开(公告)日：2023-08-03

申请号：US18131341

申请日：2023-04-05

Applicant: Lam Research Corporation

Inventor： Yaswanth Rangineni ,  Sunil Kapoor ,  Edward Augustyniak ,  Yukinori Sakiyama

IPC: H03H7/38 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455 ,  C23C16/505

CPC classification number: H03H7/38 ,  H01J37/32183 ,  H01J37/32899 ,  C23C16/4583 ,  H01J37/32091 ,  H01J37/32174 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/505

Abstract: Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.

公开(公告)号：US20230245862A1

公开(公告)日：2023-08-03

申请号：US18013347

申请日：2022-06-15

Applicant: LAM RESEARCH CORPORATION

Inventor： Anthony John RICCI ,  Ramon Liwanag BUAN ,  Wayne Edward RICHTER ,  Christopher J. PENA ,  Marissa Elena Ortiz AMAYA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32834 ,  H01J37/32899 ,  H01J37/32357 ,  H01J2237/182 ,  H01J2237/186 ,  H01J2237/334 ,  H01J2237/24585

Abstract: A gas delivery system for substrate processing tool includes a first gas box configured to supply a first gas mixture including one or more gases selected from a first set of N gases to a first substrate processing chamber, where N is an integer greater than one. A second gas box is configured to selectively supply a second gas mixture including one or more gases selected from a second set of M gases to a second substrate processing chamber, where M is an integer greater than one. A third gas box is configured to supply a third gas to the first substrate processing chamber at a first concentration and to supply the third gas to the second substrate processing chamber at a second concentration. The third gas is incompatible with one or more gases in the first set of N gases and with one or more gas in the second set of M gases.

公开(公告)号：US20230230811A1

公开(公告)日：2023-07-20

申请号：US17998354

申请日：2021-05-25

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Da Li ,  Younghee Lee ,  Samantha S.H. Tan ,  Alan J. Jensen ,  Jun Xue ,  Mary Anne Manumpil

IPC: H01J37/32 ,  H01L21/027 ,  H01L21/033 ,  G03F7/09 ,  G03F7/004 ,  G03F7/16 ,  G03F7/11

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0332 ,  G03F7/094 ,  G03F7/0042 ,  G03F7/167 ,  G03F7/11 ,  H01J2237/3328 ,  H01J37/32816 ,  H01J37/321 ,  H01J37/32899

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.

公开(公告)号：US11674217B2

公开(公告)日：2023-06-13

申请号：US16070094

申请日：2017-03-23

Applicant: ULVAC, INC.

Inventor： Junsuke Matsuzaki ,  Hirohisa Takahashi

IPC: C23C14/56 ,  C23C14/18 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34 ,  H01L21/67 ,  H01L21/677 ,  H01L31/18 ,  C23C14/34 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/20

CPC classification number: C23C14/56 ,  C23C14/185 ,  C23C14/50 ,  H01J37/32899 ,  H01J37/3488 ,  H01L21/67173 ,  H01L21/67742 ,  H01L31/1864 ,  H01L31/1884 ,  C23C14/34 ,  H01L31/022475 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/202

Abstract: A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

公开(公告)号：US20190122902A1

公开(公告)日：2019-04-25

申请号：US15792252

申请日：2017-10-24

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Junghoon Kim ,  Sean Kang ,  Mang-Mang Ling

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32899 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68742

Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

公开(公告)号：US20190103279A1

公开(公告)日：2019-04-04

申请号：US15958560

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/02 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

CPC classification number: H01L21/3003 ,  B01D67/009 ,  C23C16/452 ,  C23F1/12 ,  H01J37/321 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/006 ,  H01J2237/332 ,  H01L21/02118 ,  H01L21/02252 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0271 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/76826

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US20180315585A1

公开(公告)日：2018-11-01

申请号：US16029847

申请日：2018-07-09

Applicant: Tokyo Electron Limited

Inventor： Atsushi Gomi ,  Tetsuya Miyashita ,  Shinji Furukawa ,  Koji Maeda ,  Masamichi Hara ,  Naoyuki Suzuki ,  Hiroshi Miki ,  Toshiharu Hirata

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32733 ,  C23C14/566 ,  C23C14/568 ,  H01J37/32899 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67745 ,  H01L43/12

Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.

公开(公告)号：US20180294173A1

公开(公告)日：2018-10-11

申请号：US15942800

申请日：2018-04-02

Applicant: Kee Won SUH ,  Allied TechFinders Co., Ltd.

Inventor： Kee Won SUH

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67126 ,  H01L21/6719

Abstract: A semiconductor processing device according to the present invention includes a process chamber having an inner space in which plasma is generated and a chuck unit disposed in the inner space and supporting a substrate processed by the plasma. The process chamber includes a first chamber portion and a second chamber portion that are opened from each other, and when the first chamber portion and the second chamber portion are closed together, the process chamber is provided with the inner space in which the plasma is generated. When the first chamber portion and the second chamber portion are opened from each other, the chuck unit is exposed to outside.