Abstract:
The present disclosure relates generally to the field of sequential surface chemistry. More specifically, it relates to products and methods for manufacturing products using Atomic Layer Deposition (“ALD”) to depose one or more materials onto a surface. ALD is an emerging variant of Chemical Vapor Deposition (“CVD”) technology with capability for high-quality film deposition at low pressures and temperatures, which may produce defect-free films, on a macroscopic scale, at any given thickness. The present disclosure includes, in varying embodiments, methods of manufacturing microelectronic assemblies and components such as battery electrodes, capacitors, resistors, catalyzers and PCB assemblies by ALD, and the products manufactured by those methods.
Abstract:
In a multilayer wiring board comprising a core board, and a wiring layer and an electrically insulating layer that are stacked on one surface of said core board, a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, and a capacitor is provided on one surface of said core board, wherein said capacitor comprises an upper electrode being the conductive material in said through hole, and a lower electrode disposed so as to confront said upper electrode via a dielectric layer.
Abstract:
An interposer integrated with capacitors (100) includes a plug substrate (10) in which via-plugs (12) is formed, and a capacitor substrate (20) in which capacitors are formed. The capacitor substrate (20) includes a substrate body (21), capacitors (22) formed on the main surface of the substrate body, a cover insulating film (25) that covers the capacitors, a terminal electrodes (26) connected to the electrodes of the capacitor and formed on the cover insulating film, electrode pads (24) formed on the rear surface of the substrate body, and via-plugs 23 connecting together the terminal electrodes and electrode pads. The plug substrate (10) includes a substrate body (11), and electrode pads (13) formed on the main surface of the substrate body corresponding to the terminal electrodes of the capacitor substrate, and via-plugs (12) penetrating the substrate body and connected to the electrode pads.
Abstract:
A process for forming a laminate with capacitance and the laminate formed thereby. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate wherein the foil has a dielectric. A conductive layer is formed on the dielectric. The conductive foil is treated to electrically isolate a region of conductive foil containing the conductive layer from additional conductive foil. A cathodic conductive couple is made between the conductive layer and a cathode trace and an anodic conductive couple is made between the conductive foil and an anode trace.
Abstract:
A first voltage variable material (“VVM”) includes an insulative binder, first conductive particles with a core and a shell held in the insulating binder and second conductive particles without a shell held in the insulating binder; a second VVM includes an insulating binder, first conductive particles with a core and a shell held in the insulating binder, second conductive particles without a shell held in the insulating binder, and semiconductive particles with a core and a shell held in the insulating binder; a third VVM includes only first conductive particles with a core and a shell held in the insulating binder.
Abstract:
In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.
Abstract:
A multilayer printed wiring board 10 includes: a mounting portion 60 on the top surface of which is mounted a semiconductor element that is electrically connected to a wiring pattern 32, etc.; and a capacitor portion 40 having a high dielectric constant layer 43, formed of ceramic and first and second layer electrodes 41 and 42 that sandwich the high dielectric constant layer 43. One of either of the first and second layer electrodes 41 and 42 is connected to a power supply line of the semiconductor element and the other of either of the first and second layer electrodes 41 and 42 is connected to a ground line. In this multilayer printed wiring board 10, high dielectric constant layer 43 included in the layered capacitor portion 40, which is connected between the power supply line and the ground line, is formed of ceramic. With this structure, the static capacitance of the layered capacitor portion 40 can be high, and an adequate decoupling effect is exhibited even under circumstances in which instantaneous potential drops occur readily.
Abstract:
An embedded capacitor structure comprising a main body; at least one embedded capacitor, having a first electrode, a dielectric layer, and a second electrode, formed in the main body; and at least one via electrical connection formed in the main body; wherein at least one of the first and second electrodes is free from direct electrical connection to the via electrical connections.
Abstract:
This disclosure relates to compositions and methods for using such compositions to provide protective coatings, particularly of electronic components. Fired-on-foil ceramic capacitors coated with a polybenzoxazole encapsulant which may be embedded in printed wiring boards are disclosed.
Abstract:
Thick-film capacitors are formed on ceramic interconnect substrates having high capacitance densities and other desirable electrical and physical properties. The capacitor dielectrics are fired at high temperatures.