公开(公告)号：US20100086735A1

公开(公告)日：2010-04-08

申请号：US12571830

申请日：2009-10-01

Applicant: Jeffrey W. Baldwin ,  Maxim K. Zalalutdinov ,  Bradford B. Pate ,  Brian H. Houston

Inventor： Jeffrey W. Baldwin ,  Maxim K. Zalalutdinov ,  Bradford B. Pate ,  Brian H. Houston

IPC: B32B3/10 ,  B05D3/06

CPC classification number: B81C1/00206 ,  B81B2201/0271 ,  G01N29/036 ,  G01N2291/0257 ,  H03H9/02259 ,  H03H9/2405 ,  Y10T428/24331

Abstract: A method of functionalizing a nanomechanical resonator involving providing a wafer with a thin film layer on a sacrificial layer, suspending freely a resonator on the wafer, coating the resonator with a liquid containing a terminal allyl group, placing a quartz-mask on the wafer, trapping the liquid between the mask and the wafer, initiating a reaction of the terminal allyl with photo-induced electrons, rinsing the wafer, and drying the wafer. The liquid can be 2-allyl hexafluoroisopropanol or another liquid that has an effective sorbent group for DMMP or DNT. The initiating can be performed via a deep UV source selected from a Hg arc, Xe arc, or DUV laser. The method can further include incorporating narrow gaps of from about 50 to about 300 nm in the resonator.

Abstract translation: 一种纳米机械谐振器的功能化方法，包括在牺牲层上提供具有薄膜层的晶片，将谐振器自由悬挂在晶片上，用含有末端烯丙基的液体涂覆谐振器，在晶片上放置石英掩模， 在面罩和晶片之间捕获液体，引发末端烯丙基与光诱导电子的反应，冲洗晶片和干燥晶片。 液体可以是2-烯丙基六氟异丙醇或具有用于DMMP或DNT的有效吸附剂基团的另一种液体。 起始可以通过选自Hg弧，Xe弧或DUV激光的深UV源进行。 该方法还可以包括在谐振器中引入约50至约300nm的窄间隙。

公开(公告)号：US20100072626A1

公开(公告)日：2010-03-25

申请号：US12234406

申请日：2008-09-19

Applicant: Horst Theuss ,  Markus Loehndorf ,  Florian Schoen

Inventor： Horst Theuss ,  Markus Loehndorf ,  Florian Schoen

IPC: H01L23/52 ,  H01L21/00

CPC classification number: B81C1/00301 ,  B81B2201/0271 ,  B81B2207/095 ,  H01L24/05 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: A wafer-level packaged integrated circuit includes a semiconductor substrate including a first silicon layer. A micro-electromechanical system (MEMS) device is integrated into the first silicon layer. A thin-film deposited sealing member is deposited over the first silicon layer and is configured to seal a cavity in the first silicon layer. At least one additional layer is formed over the sealing member. At least one under bump metallization (UBM) is formed over the at least one additional layer.

Abstract translation: 晶片级封装集成电路包括包括第一硅层的半导体衬底。 微机电系统（MEMS）装置集成到第一硅层中。 在第一硅层上沉积薄膜沉积的密封构件，并且构造成密封第一硅层中的空腔。 在密封构件上形成至少一个附加层。 至少一个下凸起金属化（UBM）在至少一个附加层上形成。

公开(公告)号：US20100051944A1

公开(公告)日：2010-03-04

申请号：US12545235

申请日：2009-08-21

Applicant: Takahisa Kato ,  Yasuhiro Shimada

Inventor： Takahisa Kato ,  Yasuhiro Shimada

IPC: H01L21/66 ,  H01L21/306 ,  H01L31/0232

CPC classification number: B81C1/00626 ,  B81B2201/0271 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0198

Abstract: A silicon processing method includes: forming a mask pattern on a principal plane of a single-crystal silicon substrate; and applying crystal anisotropic etching to the principal surface to form a structure including a (111) surface and a crystal surface equivalent thereto and having width W1 and length L1. The principal plane includes a (100) surface and a crystal surface equivalent thereto or a (110) surface and a crystal surface equivalent thereto. A determining section for determining the width W1 of the structure is formed in the mask pattern. The width of the determining section for the width W1 of the mask pattern is width W2. The width of the mask pattern other than the determining section is larger than the width W2 over a length direction of the mask pattern.

Abstract translation: 硅处理方法包括：在单晶硅衬底的主平面上形成掩模图案; 并对主表面施加结晶各向异性蚀刻，形成包括（111）表面和与其等效的晶面的结构，并具有宽度W1和长度L1。 主平面包括（100）表面和与其等效的（110）表面和与其等效的（110）表面和晶体表面。 用于确定结构的宽度W1的确定部分形成在掩模图案中。 掩模图案的宽度W1的确定部的宽度为宽度W2。 除了确定部分之外的掩模图案的宽度大于在掩模图案的长度方向上的宽度W2。

公开(公告)号：US07662654B2

公开(公告)日：2010-02-16

申请号：US12164820

申请日：2008-06-30

Applicant: Ijaz H. Jafri ,  Galen P. Magendanz

Inventor： Ijaz H. Jafri ,  Galen P. Magendanz

IPC: H01L21/00

CPC classification number: B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

Abstract: A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

公开(公告)号：US20090325335A1

公开(公告)日：2009-12-31

申请号：US12488854

申请日：2009-06-22

Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L21/302 ,  H01L21/02

CPC classification number: B81C1/00595 ,  B81B2201/0271 ,  B81C2201/0109 ,  B81C2201/014

Abstract: The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making: e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; and f) eliminating all or part of the layer of Si.

Abstract translation: 本发明涉及一种从包含至少一种单晶材料中的第一和第二部分的异质衬底制备组分的方法，以及由位于两层单晶之间的至少一层单晶硅的至少一个叠层构成的牺牲层 SiGe，堆叠设置在单晶材料的第一和第二部分之间，其中该方法包括通过以下步骤蚀刻所述堆叠：e）在第一和/或第二部分中的至少一个开口，以及第一和/ SiGe，以达到Si层; 和f）消除Si的全部或部分层。

公开(公告)号：US20090179286A1

公开(公告)日：2009-07-16

申请号：US12013174

申请日：2008-01-11

Applicant: Florian Schoen ,  Wolfgang Raberg ,  Bernhard Winkler ,  Werner Weber

Inventor： Florian Schoen ,  Wolfgang Raberg ,  Bernhard Winkler ,  Werner Weber

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81C1/00182 ,  B81B2201/0271 ,  H01L41/0933 ,  Y10S977/732

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Abstract translation: 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

公开(公告)号：US20090115283A1

公开(公告)日：2009-05-07

申请号：US11630773

申请日：2005-06-29

Applicant: Amyot Tripard ,  Yves Brechet

Inventor： Amyot Tripard ,  Yves Brechet

IPC: H02N11/00 ,  H01L41/22

CPC classification number: H03H3/0072 ,  B81B3/0078 ,  B81B2201/0271 ,  B81B2203/0118 ,  H03H9/2436 ,  H03H2009/02503 ,  Y10T29/42

Abstract: An electromechanical resonator including a vibrating body, at least one excitation electrode, and at least one detection electrode. The vibrating body includes a first part made of a first material with a first Young's modulus and a second part made of a second material with a second Young's modulus, less than the first Young's modulus, the second part being at least partially located facing the detection electrode.

公开(公告)号：US20090075415A1

公开(公告)日：2009-03-19

申请号：US12232051

申请日：2008-09-10

Applicant: Makiko Nakamura

Inventor： Makiko Nakamura

IPC: H01L21/00

CPC classification number: B81C1/00333 ,  B81B2201/0271 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The present invention provides a method for manufacturing a semiconductor device which has an integrated circuit provided on a semiconductor substrate and a movable part which is movable relative to the substrate. This manufacturing method includes: a step of covering the movable part with a sacrificial film; a step of covering the sacrificial film with a first sealing layer which is formed of a material having a tensile stress; a step of forming a through-hole in the first sealing layer; a step of removing the sacrificial film through the through-hole to form a void around the movable part; and a step of film-forming a second sealing layer on the first sealing layer to close the through-hole.

Abstract translation: 本发明提供一种制造半导体器件的方法，该半导体器件具有设置在半导体衬底上的集成电路和可相对于衬底移动的可移动部件。 该制造方法包括：利用牺牲膜覆盖可动部的工序; 用由具有拉伸应力的材料形成的第一密封层覆盖牺牲膜的步骤; 在第一密封层中形成通孔的步骤; 通过所述通孔去除所述牺牲膜以在所述可动部分周围形成空隙的步骤; 以及在第一密封层上成膜第二密封层以闭合通孔的步骤。

公开(公告)号：US20080266008A1

公开(公告)日：2008-10-30

申请号：US12017186

申请日：2008-01-21

Applicant: Akinori Hashimura

Inventor： Akinori Hashimura

IPC: B81B5/00 ,  H01L21/28

CPC classification number: B81C1/00142 ,  B81B2201/0271

Abstract: An electromechanical resonator includes a resonator portion which includes a fixed electrode and an oscillator formed separately from the fixed electrode with a gap. The gap has a first gap region and a second gap region which are arranged in a thickness direction of the fixed electrode. The first gap region is different in width from the second gap region.

Abstract translation: 机电谐振器包括谐振器部分，其包括固定电极和与具有间隙的固定电极分开形成的振荡器。 间隙具有沿固定电极的厚度方向排列的第一间隙区域和第二间隙区域。 第一间隙区域的宽度与第二间隙区域不同。

公开(公告)号：US20080261372A1

公开(公告)日：2008-10-23

申请号：US12164300

申请日：2008-06-30

Applicant: Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

Inventor： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

IPC: H03H3/007

CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/2447 ,  H03H9/462 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49826 ,  Y10T29/49861

Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

Abstract translation: 一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记 被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。