公开(公告)号：US11993512B2

公开(公告)日：2024-05-28

申请号：US17694296

申请日：2022-03-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yang-Che Chen ,  Victor Chiang Liang ,  Chen-Hua Lin ,  Chwen-Ming Liu ,  Huang-Wen Tseng ,  Yi-Chuan Teng

IPC: B81B7/04 ,  B81C3/00 ,  B81C1/00

CPC classification number: B81B7/04 ,  B81C3/001 ,  B81B2201/033 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C1/00357 ,  B81C1/00468 ,  B81C1/00476 ,  B81C1/00484 ,  B81C2201/0132 ,  B81C2203/038

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.

公开(公告)号：US11952268B2

公开(公告)日：2024-04-09

申请号：US17304094

申请日：2021-06-14

Applicant: Lawrence Semiconductor Research Laboratory, Inc.

Inventor： Chantal Arena ,  Nupur Bhargava ,  Alec Fischer

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00476 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0177

Abstract: A free-standing microstructure may be formed from an engineered substrate including a first silicon layer, a second silicon layer, and an intermediate layer. The second silicon layer may include a monocrystalline silicon film. The intermediate layer may be between the first silicon layer and the second silicon layer. The intermediate layer may include a silicon- or germanium-based material having a different lattice constant than the first silicon layer or the second silicon layer. The intermediate layer of the free-standing microstructure may further include one or more voids wherein at least a portion of the silicon- or germanium-based material is absent between the first silicon layer and the second silicon layer.

公开(公告)号：US11939216B2

公开(公告)日：2024-03-26

申请号：US17188082

申请日：2021-03-01

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Stephan Helbig ,  Adolf Koller

IPC: B81C1/00 ,  G02B26/08 ,  G02B26/10

CPC classification number: B81C1/00904 ,  B81C1/00888 ,  G02B26/0833 ,  G02B26/105 ,  B81B2201/042 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0143

Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

公开(公告)号：US11932534B2

公开(公告)日：2024-03-19

申请号：US17696299

申请日：2022-03-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Hua Lin ,  Chang-Ming Wu ,  Chung-Yi Yu ,  Ping-Yin Liu ,  Jung-Huei Peng

IPC: B81C1/00 ,  B81B7/00 ,  H01L23/00

CPC classification number: B81C1/00238 ,  B81B7/008 ,  B81C1/00333 ,  H01L24/09 ,  H01L24/89 ,  B81B2207/07 ,  B81C2201/0132 ,  B81C2203/0109 ,  B81C2203/0785 ,  B81C2203/0792 ,  H01L2224/091 ,  H01L2224/80013 ,  H01L2224/80895

Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

公开(公告)号：US11905166B2

公开(公告)日：2024-02-20

申请号：US17446898

申请日：2021-09-03

Applicant: Robert Bosch GmbH

Inventor： Heribert Weber ,  Peter Schmollngruber ,  Thomas Friedrich ,  Andreas Scheurle ,  Joachim Fritz ,  Sophielouise Mach

IPC: B81C1/00 ,  B81B3/00 ,  H04R3/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/016 ,  B81C2201/0132 ,  H04R3/00

Abstract: A production method for a micromechanical component for a sensor or microphone device. The method includes: patterning a plurality of first trenches through a substrate surface of a monocrystalline substrate made of at least one semiconductor material using anisotropic etching, covering the lateral walls of the plurality of first trenches with a passivation layer, while bottom areas of the plurality of first trenches are kept free or are freed of the passivation layer, etching at least one first cavity, into which the plurality of first trenches opens, into the monocrystalline substrate using an isotropic etching method, in which an etching medium of the isotropic etching method is conducted through the plurality of first trenches, and by covering the plurality of first trenches by epitaxially growing a monocrystalline sealing layer on the substrate surface of the monocrystalline substrate made of the at least one identical semiconductor material as the monocrystalline substrate.

公开(公告)号：US11878906B2

公开(公告)日：2024-01-23

申请号：US17937123

申请日：2022-09-30

Applicant: Sciosense B.V.

Inventor： Kailash Vijayakumar ,  Remco Henricus Wilhelmus Pijnenburg ,  Willem Frederik Adrianus Besling ,  Sophie Guillemin ,  Jörg Siegert

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81C1/00595 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2201/014 ,  B81C2201/0132 ,  B81C2201/053

Abstract: In an embodiment, an integrated MEMS transducer device includes a substrate body having a first electrode on a substrate, an etch stop layer located on a surface of the substrate, a suspended micro-electro-mechanical systems (MEMS) diaphragm with a second electrode, an anchor structure with anchors connecting the MEMS diaphragm to the substrate body and a sacrificial layer in between the anchors of the anchor structure, the sacrificial layer including a first sub-layer of a first material, wherein the first sub-layer is arranged on the etch stop layer, a second sub-layer of a second material, wherein the second sub-layer is arranged on the first sub-layer, and wherein the first and the second material are different materials.

公开(公告)号：US20230382717A1

公开(公告)日：2023-11-30

申请号：US18448600

申请日：2023-08-11

Applicant: ROHM CO., LTD.

Inventor： Martin Wilfried HELLER

IPC: B81B3/00 ,  B81C1/00 ,  G01P15/125

CPC classification number: B81B3/0051 ,  B81C1/00341 ,  G01P15/125 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0132

Abstract: A MEMS sensor includes a semiconductor chip that has a first principal surface and a second principal surface and that has a cavity, a frame portion that forms a bottom portion and a side portion of the cavity, and a movable portion that is formed on the side of the first principal surface and that is supported by the frame portion in a floating state with respect to the cavity, and, in the MEMS sensor, the frame portion has a stepped surface formed at a height position between the bottom portion of the cavity and the first principal surface, and the movable portion includes a main body portion facing the cavity in a first direction and an extension portion that extends from the main body portion toward an upper region of the stepped surface in a second direction and that faces the stepped surface in the first direction.

公开(公告)号：US20230373781A1

公开(公告)日：2023-11-23

申请号：US18319154

申请日：2023-05-17

Applicant: Hahn-Schickard-Gesellschaft für angewandte Forschung e. V.

Inventor： Jan Rockstroh ,  Achim Bittner ,  Daniel Hoffmann ,  Alfons Dehé

IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08

CPC classification number: B81B3/0043 ,  B81C1/00158 ,  G02B26/0833 ,  B81B2201/032 ,  B81B2201/042 ,  B81B2203/0118 ,  B81C2201/0132 ,  B81B2203/055 ,  B81B2203/0127

Abstract: A MEMS actuator comprising a frame structure and at least one actuator arm. The actuator arm is connected at a first end to the frame structure and at a second end to an actuator body. The MEMS actuator is characterized in that the at least one actuator arm has a meander structure comprising two or more actuator sections. The two or more actuator sections are oriented substantially perpendicular to the longitudinal axis of the actuator arm. Furthermore, the two or more actuator sections comprise at least one layer of an actuator material, wherein a movement of the actuator body can be effected by actuating the two or more actuator sections. Further disclosed is a method for producing the MEMS actuator.

公开(公告)号：US11787688B2

公开(公告)日：2023-10-17

申请号：US17099442

申请日：2020-11-16

Applicant: KNOWLES ELECTRONICS, LLC

Inventor： Sung Bok Lee ,  Vahid Naderyan ,  Bing Yu ,  Michael Kuntzman ,  Yunfei Ma ,  Michael Pedersen

IPC: B81C1/00 ,  B81B3/00 ,  H04R31/00 ,  G01L9/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  G01L9/0042 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0132 ,  B81C2201/0133

Abstract: A method of forming an acoustic transducer comprises providing a substrate and depositing a first structural layer on the substrate. The first structural layer is selectively etched to form at least one of an enclosed trench or an enclosed pillar thereon. A second structural layer is deposited on the first structural layer and includes a depression or a bump corresponding to the enclosed trench or pillar, respectively. At least the second structural layer is heated to a temperature above a glass transition temperature of the second structural layer causing the second structural layer to reflow. A diaphragm layer is deposited on the second structural layer such that the diaphragm layer includes at least one of a downward facing corrugation corresponding to the depression or an upward facing corrugation corresponding to the bump. The diaphragm layer is released, thereby forming a diaphragm suspended over the substrate.

公开(公告)号：US20230312337A1

公开(公告)日：2023-10-05

申请号：US18023904

申请日：2021-09-01

Applicant: 3C PROJECT MANAGEMENT LIMITED

Inventor： Gregory John MCAVOY

IPC: B81B7/02 ,  B41J2/14 ,  H10N30/20 ,  B81C1/00 ,  B41J2/045

CPC classification number: B81C1/00246 ,  B41J2/04581 ,  B41J2/14 ,  B81B7/02 ,  H10N30/20 ,  B81B2201/03 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0132 ,  B81C2201/016

Abstract: A method of manufacturing a MEMS device, the MEMS device comprising a movable Micro-Electro-Mechanical piezoelectric component and a CMOS circuit configured to be in conductive communication with the Micro-Electro-Mechanical component. A plurality of CMOS circuit layers are formed on a substrate to form the CMOS circuit, the plurality of CMOS circuit layers comprising a plurality of CMOS passivation and metallisation layers. A portion of at least one of the plurality of CMOS passivation and metallisation layers is removed in a component region of the device. One or more component region layers are formed in place of the removed portion in the component region to form the movable Micro-Electro-Mechanical piezoelectric component. The one or more component region layers are different from the portion of the at least one of the plurality of CMOS passivation and metallisation layers.