Abstract:
A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.
Abstract:
A laser sintering system is provided for sintering a die having a serrate edge. The laser sintering system comprises a laser generator for generating a laser beam and a movable carriage for carrying said die. The laser beam sinters the serrate edge of said die into a smooth edge. A method of sintering a die, the die having a serrate edge, comprises the following steps of providing a die and using a laser beam sintering the serrate edge of said die into a smooth edge. A die has a smooth edge sintered by a laser beam.
Abstract:
A wafer includes chips, a scribe lane, a metal layer and an inhibitor made of a nonconductive material. The metal layer is provided on the scribe lane and the chip located next to the scribe lane. The inhibitor covers the scribe lane and the chip next to the scribe line and includes a first removed part and an inhibition part which are located above a second removed part and a residual part of the metal layer, respectively. The scribe lane, the first and second removed parts are removed, and the inhibition part and the residual part are retained on each of the chips after a wafer cutting process. The inhibitor is provided to prevent the residual part of the metal layer from being lifted up or generating a metal burr during the wafer cutting process.
Abstract:
A flip-chip bonding structure includes a chip and a circuit board, the chip is bonded to the circuit board by bumps. The circuit board includes a light-transmissive substrate, a first circuit group, a second circuit group, a boundary circuit and an identifying member. The boundary circuit is located between the first and second circuit groups and projects a boundary circuit shadow on light-transmissive substrate. The boundary circuit shadow can be recognized according to the identifying member and is provided to identify the boundary between the first and second circuit groups or identify the position of leads with the smallest pitch.
Abstract:
A storage device of the present invention is provided to store flexible circuit packages, each of the flexible circuit packages includes an electronic component and two circuit portions warped at both sides of the electronic component, respectively. The storage device includes a first carrier and a second carrier. The first carrier includes first accommodation elements provided for placement of the flexible circuit packages, and the second carrier includes a first press portion and a second press portion. As the second carrier is placed on the first carrier, the first and second press portions are provided to press the two circuit portions warped upwardly toward the second carrier so as to reduce the warpage of the two circuit portions.
Abstract:
A COF package includes a substrate and a chip, composite bumps on the chip are bonded to leads on the substrate. Each of the composite bumps includes a raising strip, a UBM layer and a bonding layer. A bonding rib is formed on the bonding layer because of the raising strip and the UBM layer, and the bonding rib on each of the composite bumps can be inserted into each of the leads and surface-contact with each of the leads to increase weld length and bonding strength between the bonding layer and the leads and further reduce a force required for bonding the chip to the substrate in a flip-chip bonding process.
Abstract:
A tray includes a body for placement of a component (e.g. electronic component) and a taker disposed on a bottom surface of the body. The taker is used to take a spacer and includes a first taking element and a second taking element. The first taking element includes a first connection portion and a first confinement portion, and the second taking element includes a second connection portion and a second confinement portion. An accommodation space is provided between the first and second connection portions and a passageway is provided between the first and second confinement portions. While the spacer is moved through the passageway and into the accommodation space, it is confined in the accommodation space by the first and second confinement portions such that the taker can take away the spacer to show another tray located under the spacer as the tray is removed.
Abstract:
A semiconductor structure includes a substrate, a dielectric layer, a connection layer and wire layers. The dielectric layer is disposed on a surface of the substrate and includes vias showing the surface. The connection layer is disposed on the dielectric layer, a first connection portion of the connection layer is located in the vias and connected to the surface, a second connection portion of the connection layer is connected to the dielectric layer. A first ground portion of the ground metal layer is connected to the first connection portion of the connection layer, and a second ground portion of the ground metal layer is connected to the second connection portion of the connection layer. Each of the wire layers is disposed on the second connection portion of the connection layer, and the second ground portion is located between the adjacent wire layers.
Abstract:
A surface acoustic wave device includes a piezoelectric substrate, a supportive layer, a cover layer and a pillar bump. The supportive layer is disposed on the piezoelectric substrate and around a transducer, the cover layer covers the supportive layer, and the pillar bump is located in a lower via hole of the supportive layer and an upper via hole of the cover layer. The upper via hole has a lateral opening located on a lateral surface of the cover layer, and the pillar bump in the cover layer protrudes from the lateral surface of the cover layer via the lateral opening.
Abstract:
In a method of heat sink attachment, a heat-sink tape includes a plurality of heat sinks and a flexible carrier, and a holder is provided to allow the heat sinks on the moving heat-sink tape to peel from the flexible carrier and attach to a heat-sink mounting area of a moving circuit tape automatically and successively.