公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US20230203644A1

公开(公告)日：2023-06-29

申请号：US18170286

申请日：2023-02-16

Applicant: ASM IP HOLDING B.V.

Inventor： Michael Eugene Givens ,  Eva Tois ,  Suvi Haukka ,  Daria Nevstrueva ,  Charles Dezelah

IPC: C23C16/04 ,  C23C16/20 ,  C23C28/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/04 ,  C23C16/20 ,  C23C28/341 ,  C23C16/0281 ,  C23C16/45534 ,  C23C16/56

Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.

公开(公告)号：US11649546B2

公开(公告)日：2023-05-16

申请号：US16828753

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： Antti Niskanen ,  Eva Tois ,  Hidemi Suemori ,  Suvi Haukka

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/40 ,  C23C16/06

CPC classification number: C23C16/45525 ,  C23C16/04 ,  C23C16/06 ,  C23C16/40 ,  C23C16/45553

Abstract: A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

公开(公告)号：US20230139917A1

公开(公告)日：2023-05-04

申请号：US18050128

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Viraj Madhiwala ,  Daniele Chiappe ,  Marko Tuominen ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGuy Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.

公开(公告)号：US11608557B2

公开(公告)日：2023-03-21

申请号：US17216260

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Michael Eugene Givens ,  Eva Tois ,  Suvi Haukka ,  Daria Nevstrueva ,  Charles Dezelah

IPC: C23C16/04 ,  C23C16/20 ,  C23C28/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.

公开(公告)号：US20210351031A1

公开(公告)日：2021-11-11

申请号：US17370263

申请日：2021-07-08

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

IPC: H01L21/02 ,  C23C16/40 ,  H01L21/32 ,  C23C16/455

Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

公开(公告)号：US11047040B2

公开(公告)日：2021-06-29

申请号：US16594365

申请日：2019-10-07

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/02 ,  C23C16/06 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  C23C16/18 ,  C23C16/22

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US20200224311A1

公开(公告)日：2020-07-16

申请号：US16828753

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： Antti Niskanen ,  Eva Tois ,  Hidemi Suemori ,  Suvi Haukka

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  C23C16/06

Abstract: A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

公开(公告)号：US20200066512A1

公开(公告)日：2020-02-27

申请号：US16605475

申请日：2018-05-03

Applicant: ASM IP Holding B.V.

Inventor： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

公开(公告)号：US20190100837A1

公开(公告)日：2019-04-04

申请号：US16100855

申请日：2018-08-10

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/56 ,  C23C16/18 ,  C23C16/30 ,  C23C16/40 ,  C23C16/06 ,  C23C16/02 ,  H01L21/768 ,  H01L21/285 ,  C23C16/22 ,  C23C16/455

CPC classification number: C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/18 ,  C23C16/22 ,  C23C16/30 ,  C23C16/402 ,  C23C16/405 ,  C23C16/407 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.