公开(公告)号：US11837448B2

公开(公告)日：2023-12-05

申请号：US17242059

申请日：2021-04-27

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Jiyong Huang ,  Jang Seok Oh ,  Joseph C. Werner ,  Nitin Khurana ,  Ganesh Balasubramanian ,  Jennifer Y. Sun ,  Xinhai Han ,  Zhijun Jiang

IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/335 ,  H01J2237/3321

Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

公开(公告)号：US11215934B2

公开(公告)日：2022-01-04

申请号：US16934597

申请日：2020-07-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Ralph Peter Antonio ,  Shuran Sheng ,  Lin Zhang ,  Joseph C. Werner

IPC: G03F7/00 ,  H01L21/67 ,  G03F7/20

Abstract: Methods and apparatus for detecting ultraviolet light are provided herein. For example, an ultraviolet (UV) process chamber includes a vacuum window or a transparent showerhead; a UV light source disposed above one of the vacuum window or the transparent showerhead and configured to generate and transmit UV light into a process volume of the UV process chamber; and a first UV sensor configured to measure at least one of emissivity from the UV light source or irradiance of the UV light transmitted into the process volume and to transmit a signal corresponding to a measured at least one of emissivity from the UV light source or irradiance of the UV light to a controller coupled to the UV process chamber during operation.

公开(公告)号：US20210317578A1

公开(公告)日：2021-10-14

申请号：US16844089

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Joseph C. Werner

IPC: C23C16/50 ,  H01J37/32 ,  H01L21/67 ,  C23C16/458

Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

公开(公告)号：US10662529B2

公开(公告)日：2020-05-26

申请号：US15141443

申请日：2016-04-28

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Hanish Kumar ,  Lin Zhang ,  Stanley Wu

IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C16/507

Abstract: Techniques are disclosed for methods and apparatuses for reducing particle contamination formation in a high temperature processing chamber with a cooled gas feed block. The cooled gas feed has a body. The body has a main center portion having a top surface and a bottom surface. The body also has a flange extending outward from the bottom surface of the main center portion. A gas channel is disposed through the body. The gas channel has an inlet formed in the top surface of the main center portion and an outlet formed in the bottom surface of the main center portion. The body also has a center coolant channel. The center coolant channel has a first portion having an inlet formed in the top surface of the main center portion, and a second portion coupled to the first portion, the second portion having an outlet formed a sidewall of the flange.

公开(公告)号：US10580626B2

公开(公告)日：2020-03-03

申请号：US15348579

申请日：2016-11-10

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Rongping Wang ,  Jian J. Chen ,  Michael S. Cox ,  Andrew V. Le

IPC: G01R31/00 ,  G01R31/14 ,  G06F19/00 ,  G08B21/00 ,  G01N27/00 ,  H01J37/32

Abstract: Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

公开(公告)号：US10330612B2

公开(公告)日：2019-06-25

申请号：US14521345

申请日：2014-10-22

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Shuran Sheng ,  Andrew V. Le

IPC: G01N23/00 ,  G01N23/201 ,  G01T7/08 ,  G01N23/207 ,  G03F7/20 ,  H01L21/66

Abstract: An apparatus for integrating metrology and method for using the same are disclosed. The apparatus includes a multi-chamber system having a transfer chamber, a deposition chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the deposition chamber or etch chamber and the metrology chamber.

公开(公告)号：US10883932B2

公开(公告)日：2021-01-05

申请号：US16455689

申请日：2019-06-27

Applicant: Applied Materials, Inc.

Inventor： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Fa Ji ,  Jang Seok Oh ,  Patrick L. Smith ,  Shawyon Jafari ,  Ralph Peter Antonio

IPC: G01N21/53 ,  G01N1/22 ,  H01L21/67 ,  H01L21/677 ,  G01N15/00 ,  G01N15/06 ,  G01N15/02

Abstract: An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

公开(公告)号：US08728918B2

公开(公告)日：2014-05-20

申请号：US13656420

申请日：2012-10-19

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Rongping Wang ,  Alan Tso

IPC: H01L21/20

CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/44 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32577 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.

Abstract translation: 一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到 气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。 VHF接地带在多个壁中的至少一个和阴影框架或衬底支撑件中的至少一个之间提供低阻抗电流路径。 该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

公开(公告)号：US20130102133A1

公开(公告)日：2013-04-25

申请号：US13656420

申请日：2012-10-19

Applicant: Applied Materials, Inc.

Inventor： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Rongping Wang ,  Alan Tso

IPC: H01L21/02

CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/44 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32577 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.

Abstract translation: 一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到 气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。 VHF接地带在多个壁中的至少一个和阴影框架或衬底支撑件中的至少一个之间提供低阻抗电流路径。 该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。