COATING COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES

    公开(公告)号:US20210341840A1

    公开(公告)日:2021-11-04

    申请号:US17231417

    申请日:2021-04-15

    Abstract: Coating compositions comprise: a curable compound comprising: a core chosen from a C6 carbocyclic aromatic ring, a C2-5 heterocyclic aromatic ring, a C9-30 fused carbocyclic aromatic ring system, a C4-30 fused heterocyclic aromatic ring system, C1-20 aliphatic, and C3-20 cycloaliphatic, and three or more substituents of formula (1) wherein at least two substituents of formula (1) are attached to the aromatic core; and wherein: Ar1 is chosen from a C6 carbocyclic aromatic ring, a C2-5 heterocyclic aromatic ring, a C9-30 fused carbocyclic aromatic ring system, and a C4-30 fused heteroocyclic aromatic ring system; Z is a substituent independently chosen from OR1, protected hydroxyl, carboxyl, protected carboxyl, SR1, protected thiol, —O—C(═O)—C1-6 alkyl, halogen, and NHR2; wherein each R1 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, and C5-30 aryl; each R2 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, C5-30 aryl, C(═O)—R1, and S(═O)2—R1; x is an integer from 1 to the total number of available aromatic ring atoms in Ar1; and * denotes the point of attachment to the core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition. Coated substrates formed with the coating compositions and methods of forming electronic devices using the compositions are also provided. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

    PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS

    公开(公告)号:US20190235385A1

    公开(公告)日:2019-08-01

    申请号:US16245631

    申请日:2019-01-11

    Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

    Photoresist topcoat compositions and methods of processing photoresist compositions

    公开(公告)号:US10197918B2

    公开(公告)日:2019-02-05

    申请号:US15730875

    申请日:2017-10-12

    Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

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