WEARABLE DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    24.
    发明申请
    WEARABLE DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 有权
    在半导体基板上具有单一集成多传感器器件的可装置的器件及其方法

    公开(公告)号:US20140268523A1

    公开(公告)日:2014-09-18

    申请号:US14207461

    申请日:2014-03-12

    Abstract: A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors to reduce form factor, cost, complexity, simplify assembly, while increasing performance.

    Abstract translation: 提供了一种穿戴式装置,其具有被配置成检测和测量感兴趣的不同参数的多个传感器。 可佩戴装置包括至少一个单片集成多传感器(MIMS)装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如,MIMS装置可以包括间接传感器和直接传感器。 可穿戴设备将待测量的第一参数直接耦合到直接传感器。 相反,可佩戴装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上将其它传感器添加到可穿戴装置中。 这支持集成多个传感器,以减少外形,成本,复杂性,简化组装,同时提高性能。

    Microbolometer with improved mechanical stability and method of manufacturing the same
    25.
    发明授权
    Microbolometer with improved mechanical stability and method of manufacturing the same 失效
    具有改善机械稳定性的微热辐射计及其制造方法

    公开(公告)号:US07884328B2

    公开(公告)日:2011-02-08

    申请号:US12181871

    申请日:2008-07-29

    Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

    Abstract translation: 本发明提供一种具有悬臂结构的微电热计及其制造方法,特别是具有三维悬臂结构的微电热计,其从传统的二维悬臂结构得到改进,及其制造方法。 该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底,在衬底上形成牺牲层,在牺牲层中形成具有不均匀横截面的悬臂结构,形成传感器部分 通过悬臂结构从衬底隔离,并去除牺牲层。

    PIEZOELECTRIC DEVICE, ANGULAR VELOCITY SENSOR, ELECTRONIC APPARATUS, AND PRODUCTION METHOD OF A PIEZOELECTRIC DEVICE
    26.
    发明申请
    PIEZOELECTRIC DEVICE, ANGULAR VELOCITY SENSOR, ELECTRONIC APPARATUS, AND PRODUCTION METHOD OF A PIEZOELECTRIC DEVICE 有权
    压电装置,角速度传感器,电子装置和压电装置的制造方法

    公开(公告)号:US20100045144A1

    公开(公告)日:2010-02-25

    申请号:US12545524

    申请日:2009-08-21

    Abstract: A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb1+X(ZrYTi1−Y)O3+X(0≦X≦0.3, 0≦Y≦0.55) and a peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less. The second electrode film is laminated on the piezoelectric film.

    Abstract translation: 提供一种压电装置,包括基板,第一电极膜,压电膜和第二电极膜。 第一电极膜形成在基板上。 压电薄膜由Pb1 + X(ZrYTi1-Y)O3 + X(0≦̸ X< NlE; 0.3,0≦̸ Y≦̸ 0.55)表示,通过X射线衍射法测得的烧绿石相的峰强度为10% 相对于钙钛矿相的(100)面取向,(001)面取向,(110)面取向,(101)面取向和(111)面取向的峰值强度之和小, 所述压电膜形成在所述第一电极膜上,膜厚度为400nm以上且1000nm以下。 第二电极膜层叠在压电膜上。

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