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    Pattern forming method
    21.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号：US09207531B2

    公开(公告)日：2015-12-08

    申请号：US13239449

    申请日：2011-09-22

    Applicant: Hiroko Nakamura ,  Koji Asakawa ,  Shigeki Hattori ,  Satoshi Tanaka ,  Toshiya Kotani

    Inventor： Hiroko Nakamura ,  Koji Asakawa ,  Shigeki Hattori ,  Satoshi Tanaka ,  Toshiya Kotani

    IPC: H01L21/31 ,  H01L21/469 ,  G03F7/00 ,  B81C1/00 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00

    Abstract: According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.

    Abstract translation: 根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。 存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。 存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案， 区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。 用左图案蚀刻该胶片作为掩模。

    FABRICATION OF DIRECTIONALLY ORIENTED BLOCK COPOLYMER FILMS
    23.
    发明申请
    FABRICATION OF DIRECTIONALLY ORIENTED BLOCK COPOLYMER FILMS 审中-公开
    制造面向方向的块状共聚物薄膜

    公开(公告)号：US20150298405A1

    公开(公告)日：2015-10-22

    申请号：US14405844

    申请日：2013-06-05

    Applicant: Gurpreet Singh ,  Alamgir Karim

    Inventor： Gurpreet Singh ,  Alamgir Karim

    IPC: B29C71/02 ,  C08J5/18

    CPC classification number: B29C71/02 ,  B29C67/24 ,  B29C71/0072 ,  B29C2071/022 ,  B29K2096/04 ,  B29K2105/0085 ,  B29L2007/008 ,  B81C1/00031 ,  B81C2201/0149 ,  C08J5/18 ,  C08J2353/00 ,  C08J2383/10 ,  G03F7/0002

    Abstract: Directionally oriented block copolymer films and zone annealing processes for producing directionally oriented block films are provided. The zone annealing processes include methods of inducing horizontally oriented block copolymers through a soft sheer process and methods of inducing vertically oriented block copolymers via sharp dynamic zone annealing. The zone annealing processes are capable of both small and large scale production of directionally oriented block films. The cold zone annealing processes are also capable of being combined with graphoepitaxy methods.

    Abstract translation: 提供了定向嵌段共聚物膜和用于制备定向取向嵌段膜的区域退火工艺。 区退火过程包括通过软纯化方法诱导水平取向嵌段共聚物的方法和通过尖锐动态区退火诱导垂直取向的嵌段共聚物的方法。 区域退火工艺能够小规模生产定向取向的块状薄膜。 冷区退火工艺也能够与石墨刻蚀方法组合。

    Methods of reducing defects in directed self-assembled structures
    24.
    发明授权
    Methods of reducing defects in directed self-assembled structures 有权
    减少定向自组装结构缺陷的方法

    公开(公告)号：US09159558B2

    公开(公告)日：2015-10-13

    申请号：US13840880

    申请日：2013-03-15

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Joy Cheng ,  Daniel P. Sanders ,  Melia Tjio

    IPC: B05D1/38 ,  B05D1/32 ,  B05D3/10 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3105 ,  B81C1/00

    CPC classification number: H01L21/0273 ,  B05D1/32 ,  B05D1/38 ,  B05D3/107 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0035 ,  H01L21/0337 ,  H01L21/31058

    Abstract: Methods are disclosed for reducing the number of defects in a directed self-assembled structure formed on a guiding pre-pattern (e.g., a chemical pre-pattern) on a substrate. A first layer comprising a first self-assembly material is applied onto the guiding pre-pattern, with the first self-assembly material forming domains whose alignment and orientation are directed by the guiding pre-pattern; as a result, a first self-assembled structure is formed. The first self-assembled structure is washed away, and a second layer comprising a second self-assembly material is then applied. The second self-assembly material forms a second self-assembled structure having fewer defects than the first self-assembled structure.

    Abstract translation: 公开了减少在衬底上形成的引导预图案（例如，化学预图案）上的定向自组装结构中的缺陷数量的方法。 包括第一自组装材料的第一层被施加到引导预制图案上，其中第一自组装材料形成其取向和取向由引导预图案指向的区域; 结果，形成第一自组装结构。 第一自组装结构被冲走，然后施加包括第二自组装材料的第二层。 第二自组装材料形成具有比第一自组装结构更少的缺陷的第二自组装结构。

    Etch process for reducing directed self assembly pattern defectivity using direct current positioning
    26.
    发明授权
    Etch process for reducing directed self assembly pattern defectivity using direct current positioning 有权
    使用直流定位减少定向自组装图案缺陷的蚀刻工艺

    公开(公告)号：US09153457B2

    公开(公告)日：2015-10-06

    申请号：US14018329

    申请日：2013-09-04

    Applicant: Tokyo Electron Limited

    Inventor： Vidhya Chakrapani ,  Akiteru Ko ,  Kaushik A. Kumar

    IPC: H01L21/30 ,  H01L21/311 ,  H01L21/033 ,  H01L21/67

    CPC classification number: H01L21/31138 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248

    Abstract: A method for preparing a patterned directed self-assembly layer for reducing directed self-assembly pattern defectivity using direct current superpositioning is provided. A substrate having a block copolymer layer overlying a first intermediate layer, said block copolymer layer comprising a first phase-separated polymer defining a first pattern and a second phase-separated polymer defining a second pattern in said block copolymer layer is provided. A first plasma etching process using plasma formed of a first process composition to remove said second phase-separated polymer while leaving behind said first pattern of said first phase-separated polymer is performed. A second plasma etching process to transfer said first pattern into said first intermediate layer using plasma formed of a second process composition is performed. In an embodiment, said first phase-separated polymer is exposed to an electron beam preceding, during, or following said first plasma etching process, or preceding or during said second plasma etching process.

    Abstract translation: 提供了一种用于使用直流叠加来制造用于减少定向自组装图案缺陷的图案化定向自组装层的方法。 提供了具有覆盖在第一中间层上的嵌段共聚物层的基材，所述嵌段共聚物层包含限定第一图案的第一相分离聚合物和在所述嵌段共聚物层中限定第二图案的第二相分离聚合物。 执行使用由第一处理组合物形成的等离子体的第一等离子体蚀刻工艺，以除去所述第二相分离聚合物，同时留下所述第一相分离聚合物的所述第一图案。 执行使用由第二处理组合物形成的等离子体将所述第一图案转印到所述第一中间层中的第二等离子体蚀刻工艺。 在一个实施方案中，所述第一相分离聚合物在所述第一等离子体蚀刻工艺之前，期间或之后或在所述第二等离子体蚀刻工艺之前或期间暴露于电子束。

    Nano pattern formation
    29.
    发明授权
    Nano pattern formation 有权
    纳米图案形成

    公开(公告)号：US09102515B2

    公开(公告)日：2015-08-11

    申请号：US14054679

    申请日：2013-10-15

    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

    Inventor： Kwangyeol Lee

    IPC: B81C1/00

    CPC classification number: B81C1/00031 ,  B81C1/00373 ,  B81C2201/0149 ,  B81C2201/0191 ,  Y10T428/24612 ,  Y10T428/24802

    Abstract: Nano structure patterning formation includes coating a part of a structural guide with a hydrophobic polymer, positioning the structural guide on a substrate, coating at least a part of the substrate with a film made of a block copolymer, and annealing the film made of the block copolymer to align the block copolymer.

    Abstract translation: 纳米结构图案形成包括用疏水聚合物涂覆结构导向器的一部分，将结构引导件定位在基底上，用由嵌段共聚物制成的膜涂覆至少一部分基底，并且将由该块制成的膜退火 共聚物以对齐嵌段共聚物。

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