公开(公告)号：US20160068388A1

公开(公告)日：2016-03-10

申请号：US14477451

申请日：2014-09-04

Applicant: INVENSENSE, INC.

Inventor： Michael J. Daneman ,  Fariborz Assaderaghi

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B7/0025 ,  B81B7/007 ,  B81B2207/015 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00801 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/053 ,  B81C2203/0735

Abstract: Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electro-mechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical.

Abstract translation: 提供了保护CMOS层免于暴露于释放化学品的系统和方法。 释放化学品用于释放与CMOS晶片集成的微机电（MEMS）器件。 在互补金属氧化物半导体（CMOS）晶片中产生的钝化开口的侧壁暴露了CMOS释放化学品接触时可能损坏的CMOS晶片的电介质层。 在一个方面，为了保护CMOS晶片并防止电介质层的暴露，钝化开口的侧壁可以被抵抗释放化学品的金属阻挡层覆盖。 另外或可选地，可以在CMOS晶片的表面上沉积绝缘阻挡层，以保护钝化层免于暴露于释放化学品。

公开(公告)号：US09235046B2

公开(公告)日：2016-01-12

申请号：US13754548

申请日：2013-01-30

Applicant: Pixtronix, Inc.

Inventor： Javier Villarreal ,  Timothy J. Brosnihan ,  Jasper L. Steyn ,  Richard S. Payne ,  Stephen R. Lewis

IPC: G06F3/038 ,  G09G5/00 ,  G02B26/02 ,  G09G3/22 ,  B81B3/00

CPC classification number: G02B26/02 ,  B81B3/007 ,  B81B2201/045 ,  B81B2203/0163 ,  B81B2203/051 ,  B81C2201/053 ,  B81C2201/112 ,  G02B26/023 ,  G09G3/22

Abstract: This disclosure provides systems, methods and apparatus for providing relatively thinner and less stiff compliant beams for a shutter assembly. A protective coating is deposited and patterned over the shutter assembly before it is released from a sacrificial mold over which the shutter assembly is formed. Because some primary surfaces of the compliant beams are in contact with the sacrificial mold, these primary surfaces are not coated with the protective coating. Therefore, when the shutter assembly is finally released, the resulting compliant beams are relatively thinner and less stiff providing a reduction in an actuation voltage used to operate the shutter assembly. In some instances, the protective coating is patterned into discontinuous segments before release.

Abstract translation: 本公开提供了用于为快门组件提供相对较薄且较不硬的柔性梁的系统，方法和装置。 在从快门组件形成的牺牲模具释放之前，将保护涂层沉积并在其上形成图案。 由于柔性梁的一些主表面与牺牲模具接触，所以这些主表面没有涂覆保护涂层。 因此，当快门组件最终被释放时，所产生的柔性梁相对较薄并且较不硬，从而降低用于操作闸板组件的致动电压。 在一些情况下，保护性涂层在释放之前被图案化成不连续段。

公开(公告)号：US09199837B2

公开(公告)日：2015-12-01

申请号：US13104387

申请日：2011-05-10

Applicant: Takashi Kasai ,  Nobuyuki Iida ,  Tomofumi Nakamura

Inventor： Takashi Kasai ,  Nobuyuki Iida ,  Tomofumi Nakamura

IPC: B81B7/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: B81B7/0016 ,  B81B2201/0257 ,  B81B2207/012 ,  B81C2201/053 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/16151 ,  H04R19/005 ,  H04R31/00 ,  H01L2924/00014

Abstract: In an acoustic sensor, a diaphragm arranged on an upper side of a silicon substrate includes a back chamber, and an anchor supports the diaphragm. An insulating plate portion fixed to an upper surface of the silicon substrate covers the diaphragm with a gap. A conductive fixed electrode film arranged on a lower surface of the plate portion configures a back plate. The change in electrostatic capacitance between the fixed electrode film and the diaphragm outputs to the outside from a fixed side electrode pad and a movable side electrode pad as an electric signal. A protective film is arranged continuously with the plate portion at an outer periphery of the plate portion. The protective film covers the outer peripheral part of the upper surface of the silicon substrate, and the outer periphery of the protective film coincides with the outer periphery of the upper surface of the silicon substrate.

Abstract translation: 在声学传感器中，布置在硅衬底的上侧的隔膜包括后室，并且锚固件支撑隔膜。 固定在硅基板的上表面的绝缘板部分以间隙覆盖隔膜。 布置在板部的下表面上的导电固定电极膜构成背板。 固定电极膜和隔膜之间的静电电容的变化从固定侧电极焊盘和可动侧电极焊盘作为电信号输出到外部。 保持膜在板部的外周与板部连续配置。 保护膜覆盖硅基板​​的上表面的外周部，保护膜的外周与硅基板的上表面的外周重合。

公开(公告)号：US20150274514A1

公开(公告)日：2015-10-01

申请号：US14165752

申请日：2014-01-28

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Jerwei Hsieh

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B7/0058 ,  B81B2201/032 ,  B81C1/00238 ,  B81C1/00817 ,  B81C1/00825 ,  B81C2201/053 ,  B81C2201/056 ,  B81C2203/0785

Abstract: An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.

Abstract translation: 提供集成的MEMS器件及其制造方法。 在制造方法中，牺牲层用于集成MEMS晶片和电路晶片。 本发明的优点包括防止电路晶片上的膜在加工过程中被损坏。 通过制造方法，可以使用机械和热稳定的结构材料，例如：单晶硅和多晶硅。 制造的集成MEMS器件也可以具有高填充因子的平面顶表面形貌的优点。 该制造方法特别适用于制造MEMS阵列器件。

公开(公告)号：US20150097215A1

公开(公告)日：2015-04-09

申请号：US14049988

申请日：2013-10-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hua CHU ,  Chun-Wen CHENG

IPC: B81B7/00 ,  B81C3/00

CPC classification number: B81C1/00238 ,  B81B7/0035 ,  B81B7/0041 ,  B81C1/00793 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/0118 ,  B81C2203/0792

Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate and a MEMS substrate bonded with the CMOS substrate. The CMOS substrate includes a semiconductor substrate, a first dielectric layer formed over the semiconductor substrate, and a plurality of conductive pads formed in the first dielectric layer. The MEMS substrate includes a semiconductor layer having a movable element and a second dielectric layer formed between the semiconductor layer and the CMOS substrate. The MEMS substrate also includes a closed chamber surrounding the movable element. The MEMS substrate further includes a blocking layer formed between the closed chamber and the first dielectric layer of the CMOS substrate. The blocking layer is configured to block gas, coming from the first dielectric layer, from entering the closed chamber.

Abstract translation: 提供了用于形成微机电系统（MEMS）装置的机构的实施例。 MEMS器件包括CMOS衬底和与CMOS衬底结合的MEMS衬底。 CMOS衬底包括半导体衬底，形成在半导体衬底上的第一介电层和形成在第一介电层中的多个导电焊盘。 MEMS衬底包括具有可移动元件的半导体层和形成在半导体层和CMOS衬底之间的第二电介质层。 MEMS基板还包括围绕可移动元件的封闭室。 MEMS基板还包括形成在封闭室和CMOS基板的第一介电层之间的阻挡层。 阻挡层被构造成阻挡来自第一介电层的气体进入封闭室。

公开(公告)号：US20140210864A1

公开(公告)日：2014-07-31

申请号：US13754548

申请日：2013-01-30

Applicant: PIXTRONIX, INC.

Inventor： Javier Villarreal ,  Timothy J. Brosnihan ,  Jasper L. Steyn ,  Richard S. Payne ,  Stephen R. Lewis

IPC: G02B26/02 ,  G09G3/22

CPC classification number: G02B26/02 ,  B81B3/007 ,  B81B2201/045 ,  B81B2203/0163 ,  B81B2203/051 ,  B81C2201/053 ,  B81C2201/112 ,  G02B26/023 ,  G09G3/22

Abstract: This disclosure provides systems, methods and apparatus for providing relatively thinner and less stiff compliant beams for a shutter assembly. A protective coating is deposited and patterned over the shutter assembly before it is released from a sacrificial mold over which the shutter assembly is formed. Because some primary surfaces of the compliant beams are in contact with the sacrificial mold, these primary surfaces are not coated with the protective coating. Therefore, when the shutter assembly is finally released, the resulting compliant beams are relatively thinner and less stiff providing a reduction in an actuation voltage used to operate the shutter assembly. In some instances, the protective coating is patterned into discontinuous segments before release.

Abstract translation: 本公开提供了用于为快门组件提供相对较薄且较不硬的柔性梁的系统，方法和装置。 在从快门组件形成的牺牲模具释放之前，将保护涂层沉积并在其上形成图案。 由于柔性梁的一些主表面与牺牲模具接触，所以这些主表面没有涂覆保护涂层。 因此，当快门组件最终被释放时，所产生的柔性梁相对较薄并且较不硬，从而降低用于操作闸板组件的致动电压。 在一些情况下，保护性涂层在释放之前被图案化成不连续段。

公开(公告)号：US08674464B2

公开(公告)日：2014-03-18

申请号：US12842677

申请日：2010-07-23

Applicant: Wolfgang Pahl ,  Gregor Feiertag ,  Anton Leidl

Inventor： Wolfgang Pahl ,  Gregor Feiertag ,  Anton Leidl

IPC: H01L21/00 ,  G01L9/00

CPC classification number: B81C1/00896 ,  B81B7/0061 ,  B81B2201/0257 ,  B81C2201/053 ,  H04R2201/003

Abstract: A MEMS component includes a substrate in which at least one cavity is present. The cavity is closed off toward an active side of the substrate. An inactive side is arranged opposite the active side of the substrate, and the substrate is covered with a covering film on the inactive side.

Abstract translation: MEMS部件包括其中存在至少一个空腔的基板。 空腔朝向基板的活动侧封闭。 非活性侧被布置成与衬底的有源侧相对，并且衬底在不活动侧被覆盖膜覆盖。

公开(公告)号：US08415220B2

公开(公告)日：2013-04-09

申请号：US12709981

申请日：2010-02-22

Applicant: Tymon Barwicz

Inventor： Tymon Barwicz

IPC: H01L21/336

CPC classification number: H01L29/0665 ,  B81B2203/0109 ,  B81C1/00833 ,  B81C2201/0178 ,  B81C2201/053 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775

Abstract: Techniques for preventing bending/buckling of suspended micro/nanostructures during oxidation are provided. In one aspect, a method for oxidizing a structure is provided. The method includes providing the structure having at least one suspended element selected from the group consisting of: a microstructure, a nanostructure and a combination thereof; surrounding the at least one suspended element in a cladding material; and oxidizing the at least one suspended element through the cladding material, wherein the cladding material physically constrains and thereby prevents distortion of the at least one suspended element during the oxidation.

Abstract translation: 提供了用于在氧化期间防止悬浮的微/纳米结构的弯曲/屈曲的技术。 一方面，提供一种氧化结构的方法。 该方法包括提供具有至少一个悬浮元素的结构，所述悬浮元素选自：微结构，纳米结构及其组合; 围绕包层材料中的至少一个悬挂元件; 以及通过所述包层材料氧化所述至少一个悬浮元件，其中所述包层材料物理地约束并由此防止所述至少一个悬浮元件在氧化期间的变形。

公开(公告)号：US20120149152A1

公开(公告)日：2012-06-14

申请号：US12966756

申请日：2010-12-13

Applicant: Shang-Ying Tsai ,  Jung-Huei Peng ,  Hsin-Ting Huang ,  Hung-Hua Lin ,  Ming-Tung Wu ,  Ping-Yin Liu ,  Yao-Te Huang ,  Yuan-Chih Hsieh

Inventor： Shang-Ying Tsai ,  Jung-Huei Peng ,  Hsin-Ting Huang ,  Hung-Hua Lin ,  Ming-Tung Wu ,  Ping-Yin Liu ,  Yao-Te Huang ,  Yuan-Chih Hsieh

IPC: H01L21/50

CPC classification number: B81C1/00333 ,  B81B2207/07 ,  B81C1/00825 ,  B81C2201/053 ,  B81C2203/0109 ,  H01L2924/16235

Abstract: The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a bonding pad on a first substrate; forming wiring pads on the first substrate; forming a protection material layer on the first substrate, on sidewalls and top surfaces of the wiring pads, and on sidewalls of the bonding pad, such that a top surface of the bonding pad is at least partially exposed; bonding the first substrate to a second substrate through the bonding pad; opening the second substrate to expose the wiring pads; and removing the protection material layer.

Abstract translation: 本公开提供了一种制造微电子器件的方法。 该方法包括在第一基板上形成接合焊盘; 在所述第一基板上形成布线焊盘; 在所述第一基板上，在所述布线焊盘的侧壁和顶表面上以及所述焊盘的侧壁上形成保护材料层，使得所述焊盘的顶表面至少部分地露出; 通过接合焊盘将第一衬底接合到第二衬底; 打开第二基板以露出布线垫; 并去除保护材料层。

公开(公告)号：US20110278683A1

公开(公告)日：2011-11-17

申请号：US13104387

申请日：2011-05-10

Applicant: Takashi Kasai ,  Nobuyuki Iida ,  Tomofumi Nakamura

Inventor： Takashi Kasai ,  Nobuyuki Iida ,  Tomofumi Nakamura

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81B7/0016 ,  B81B2201/0257 ,  B81B2207/012 ,  B81C2201/053 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/16151 ,  H04R19/005 ,  H04R31/00 ,  H01L2924/00014

Abstract: In an acoustic sensor, a diaphragm arranged on an upper side of a silicon substrate includes a back chamber, and an anchor supports the diaphragm. An insulating plate portion fixed to an upper surface of the silicon substrate covers the diaphragm with a gap. A conductive fixed electrode film arranged on a lower surface of the plate portion configures a back plate. The change in electrostatic capacitance between the fixed electrode film and the diaphragm outputs to the outside from a fixed side electrode pad and a movable side electrode pad as an electric signal. A protective film is arranged continuously with the plate portion at an outer periphery of the plate portion. The protective film covers the outer peripheral part of the upper surface of the silicon substrate, and the outer periphery of the protective film coincides with the outer periphery of the upper surface of the silicon substrate.

Abstract translation: 在声学传感器中，布置在硅衬底的上侧的隔膜包括后室，并且锚固件支撑隔膜。 固定在硅基板的上表面的绝缘板部分以间隙覆盖隔膜。 布置在板部的下表面上的导电固定电极膜构成背板。 固定电极膜和隔膜之间的静电电容的变化从固定侧电极焊盘和可动侧电极焊盘作为电信号输出到外部。 保持膜在板部的外周与板部连续配置。 保护膜覆盖硅基板​​的上表面的外周部，保护膜的外周与硅基板的上表面的外周重合。