Fault tolerant ion source power system
    23.
    发明授权
    Fault tolerant ion source power system 有权
    容错离子源电力系统

    公开(公告)号:US08755165B2

    公开(公告)日:2014-06-17

    申请号:US12906756

    申请日:2010-10-18

    CPC classification number: H01J37/3053 H01J37/24 H01J2237/08 H02H3/247

    Abstract: The presently disclosed technology provides a responsive ion beam source power supply system capable of handling fault events without relying on conventional protection circuitry (e.g., fuses and breakers) so that physical power supply hardware intervention by a user is minimized for typical fault conditions and the ion beam source power supply system may recover automatically after experiencing a fault condition. The presently disclosed technology further discloses an ion beam source power supply system capable of detecting and diagnosing fault states, autonomously implementing command decisions to preserve or protect the function of other ion source modules or sub-systems, and/or mitigating or recovering from the disruptive fault event and returning the ion beam source system to desired user settings.

    Abstract translation: 目前公开的技术提供了一种响应式离子束源电源系统,其能够处理故障事件而不依赖常规保护电路(例如,熔断器和断路器),从而使用户的物理电源硬件干预被最小化用于典型的故障条件和离子 光束源电源系统可能在遇到故障情况后自动恢复。 目前公开的技术还公开了一种能够检测和诊断故障状态的离子束源电源系统,自主地实施命令决定以保持或保护其他离子源模块或子系统的功能,和/或缓解或从破坏性 故障事件并将离子束源系统返回到所需的用户设置。

    Laser ion source
    24.
    发明授权
    Laser ion source 有权
    激光离子源

    公开(公告)号:US08742362B2

    公开(公告)日:2014-06-03

    申请号:US13771584

    申请日:2013-02-20

    Abstract: According to one embodiment, a laser ion source is configured to generate ions by application of a laser beam, the laser ion source including a case to be evacuated, an irradiation box disposed in the case and including a target which generates ions by irradiation of laser light, an ion beam extraction mechanism which electrostatically extracts ions from the irradiation box and guides the ions outside the case as an ion beam, a valve provided to an ion beam outlet of the case, the valve being opened at ion beam emission and being closed at other times, and a shutter provided between the valve and the irradiation box, the shutter being intermittently opened at ion beam emission and being closed at other times.

    Abstract translation: 根据一个实施例,激光离子源被配置为通过施加激光束产生离子,激光离子源包括要抽真空的壳体,设置在壳体中的照射盒,并且包括通过照射激光产生离子的靶 光,离子束提取机构,其从照射箱静电提取离子并将离子引导到壳体外部作为离子束;阀设置在壳体的离子束出口处,阀门以离子束发射打开并被封闭 在其他时间,以及设置在阀和照射箱之间的闸门,闸门以离子束发射间歇地打开并且在其它时间被关闭。

    Method and system for ion-assisted processing
    25.
    发明授权
    Method and system for ion-assisted processing 有权
    离子辅助加工的方法和系统

    公开(公告)号:US08728951B2

    公开(公告)日:2014-05-20

    申请号:US13563056

    申请日:2012-07-31

    Abstract: A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.

    Abstract translation: 一种处理衬底的方法包括执行第一曝光,其包括在等离子体室中产生含有反应气体离子的等离子体,并在衬底和等离子体室之间产生偏置电压。 该方法还包括提供等离子体护套改性剂,其具有设置在等离子体和衬底之间的孔,并可操作以将反应性气体离子引向衬底,并且在反应性气体离子被引导到等离子体室和衬底区域之间建立压力差 底物。

    FAULT TOLERANT ION SOURCE POWER SYSTEM
    26.
    发明申请
    FAULT TOLERANT ION SOURCE POWER SYSTEM 有权
    故障电源系统

    公开(公告)号:US20120091914A1

    公开(公告)日:2012-04-19

    申请号:US12906756

    申请日:2010-10-18

    CPC classification number: H01J37/3053 H01J37/24 H01J2237/08 H02H3/247

    Abstract: The presently disclosed technology provides a responsive ion beam source power supply system capable of handling fault events without relying on conventional protection circuitry (e.g., fuses and breakers) so that physical power supply hardware intervention by a user is minimized for typical fault conditions and the ion beam source power supply system may recover automatically after experiencing a fault condition. The presently disclosed technology further discloses an ion beam source power supply system capable of detecting and diagnosing fault states, autonomously implementing command decisions to preserve or protect the function of other ion source modules or sub-systems, and/or mitigating or recovering from the disruptive fault event and returning the ion beam source system to desired user settings.

    Abstract translation: 目前公开的技术提供了一种响应式离子束源电源系统,其能够处理故障事件而不依赖常规保护电路(例如,熔断器和断路器),从而使用户的物理电源硬件干预被最小化用于典型的故障条件和离子 光束源电源系统可能在遇到故障情况后自动恢复。 目前公开的技术还公开了一种能够检测和诊断故障状态的离子束源电源系统,自主地实施命令决定以保持或保护其他离子源模块或子系统的功能,和/或缓解或从破坏性 故障事件并将离子束源系统返回到所需的用户设置。

    Hydrogen implantation with reduced radiation
    27.
    发明授权
    Hydrogen implantation with reduced radiation 有权
    氢放电减少辐射

    公开(公告)号:US08101488B1

    公开(公告)日:2012-01-24

    申请号:US12978558

    申请日:2010-12-25

    CPC classification number: H01J37/3171 H01J2237/006 H01J2237/08

    Abstract: Embodiments of the present invention provide for a system for accelerating hydrogen ions. A hydrogen generator holding a supply of water is configured to generate a flow of hydrogen gas from the supply of water. An ion source structure is configured to generate a plurality of hydrogen ions from the flow of hydrogen gas. An accelerator tube is configured to accelerate the plurality of hydrogen ions. The supply of water has an isotopic ratio of deuterium that is smaller than the isotopic ratio of deuterium in Vienna Standard Mean Ocean Water.

    Abstract translation: 本发明的实施例提供一种用于加速氢离子的系统。 保持供水的氢发生器被配置为从水的供应产生氢气流。 离子源结构被配置为从氢气流中产生多个氢离子。 加速管构造成加速多个氢离子。 水的供应与氘的同位素比值小于维也纳标准平均海水中氘的同位素比。

    Charged Particle Source with Integrated Energy Filter
    28.
    发明申请
    Charged Particle Source with Integrated Energy Filter 有权
    带集成能量滤波器的带电粒子源

    公开(公告)号:US20110284763A1

    公开(公告)日:2011-11-24

    申请号:US13198640

    申请日:2011-08-04

    Abstract: A particle source in which energy selection occurs by sending a beam of electrically charged particles eccentrically through a lens so that energy dispersion will occur in an image formed by the lens. By projecting this image onto a slit in an energy selecting diaphragm, it is possible to allow only particles in a limited portion of the energy spectrum to pass. Consequently, the passed beam will have a reduced energy spread. The energy dispersed spot is imaged on the slit by a deflector. When positioning the energy dispersed spot on the slit, central beam is deflected from the axis to such an extent that it is stopped by the energy selecting diaphragm. Hereby reflections and contamination resulting from this beam in the region after the diaphragm are avoided. Also electron-electron interaction resulting from the electrons from the central beam interacting with the energy filtered beam in the area of deflector is avoided.

    Abstract translation: 通过使透过透镜偏心地发送带电粒子的束使能量分散发生在由透镜形成的图像中而发生能量选择的粒子源。 通过将该图像投影到能量选择隔膜的狭缝上,可以仅允许能谱范围的有限部分中的粒子通过。 因此,通过的光束将具有减小的能量扩展。 能量分散点通过偏转器在狭缝上成像。 当将能量分散点定位在狭缝上时,中心束从轴线偏转到其被能量选择隔膜停止的程度。 因此避免了在隔膜之后的区域中由该光束产生的反射和污染。 避免了来自中心束的电子的电子 - 电子相互作用,与偏转器区域中的能量过滤光束相互作用。

    Focused ion beam field source
    29.
    发明授权
    Focused ion beam field source 有权
    聚焦离子束场源

    公开(公告)号:US08030621B2

    公开(公告)日:2011-10-04

    申请号:US12251917

    申请日:2008-10-15

    Abstract: An apparatus for producing ions can include an emitter having a first end and a second end. The emitter can be coated with an ionic liquid room-temperature molten salt. The apparatus can also include a power supply and a first electrode disposed downstream relative to the first end of the emitter and electrically connected to a first lead of the power supply. The apparatus can also include a second electrode disposed downstream relative to the second end of the emitter and electrically connected to a second lead of the power supply.

    Abstract translation: 用于产生离子的装置可以包括具有第一端和第二端的发射体。 发射体可以用离子液体室温熔融盐涂覆。 该装置还可以包括电源和设置在发射器的第一端的下游并电连接到电源的第一引线的第一电极。 该装置还可以包括设置在发射器的第二端的下游并电连接到电源的第二引线的第二电极。

    TECHNIQUES FOR PROCESSING A SUBSTRATE
    30.
    发明申请
    TECHNIQUES FOR PROCESSING A SUBSTRATE 有权
    加工基材的技术

    公开(公告)号:US20110092059A1

    公开(公告)日:2011-04-21

    申请号:US12756036

    申请日:2010-04-07

    Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.

    Abstract translation: 本文中公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中,可以使用用于处理衬底的掩模来实现该技术。 掩模可以并入基板处理系统中,例如离子注入系统。 掩模可以包括设置在第一排中的一个或多个第一孔; 以及设置在第二排中的一个或多个第二孔,每排沿着所述掩模的宽度方向延伸,其中所述一个或多个第一孔和所述一个或多个第二孔是不均匀的。

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