公开(公告)号：US20240290581A1

公开(公告)日：2024-08-29

申请号：US18025766

申请日：2022-03-09

Applicant: Hitachi High-Tech Corporation

Inventor： Shengnan Yu ,  Takashi Uemura ,  Kohei Sato

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32816 ,  H01J2237/24585 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a sample table base that is placed on a periphery of a sample table, a pressure sensor that is connected to the sample table base through a connecting pipe and a buffer part, a heater that forms a temperature gradient in which temperatures of the connecting pipe and the buffer part rise toward the pressure sensor, and adjusts heating to bring the pressure sensor to a temperature similar to a plasma generation space above the sample table, and a rectangular base plate that is placed under the sample table base. The pressure sensor is stored in a place partitioned by a heat insulating plate at a corner of the base plate outside the sample table base on the rectangular base plate, and an inside and an outside of the corner part are communicated with each other through an opening.

公开(公告)号：US12074049B2

公开(公告)日：2024-08-27

申请号：US16452462

申请日：2019-06-25

Applicant: LAM RESEARCH CORPORATION

Inventor： Eric A. Pape

IPC: H01L21/683 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  C23C16/4404 ,  C23C16/4409 ,  C23C16/45544 ,  C23C16/4583 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32513 ,  H01J37/32715 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/334

Abstract: A substrate support for a substrate processing chamber includes a baseplate, a ceramic layer bonded to the baseplate, and a seal provided in an outer perimeter of an interface between the ceramic layer and the baseplate. The seal is arranged to seal the interface from the substrate processing chamber and includes an adhesive comprising a first material arranged in the outer perimeter of the interface between the ceramic layer and the baseplate and a ring arranged in the outer perimeter of the interface between the ceramic layer and the baseplate. The ring is removable and comprises a second material having a greater resistance to plasma erosion than the first material.

公开(公告)号：US20240282556A1

公开(公告)日：2024-08-22

申请号：US18653097

申请日：2024-05-02

Applicant: Applied Materials, Inc.

Inventor： Lara HAWRYLCHAK ,  Chaitanya A. PRASAD

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32724 ,  B08B7/00 ,  H01J37/3244 ,  H01L21/02046 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/68757 ,  H01L21/68792 ,  H01J2237/002 ,  H01J2237/334 ,  H01J2237/335

Abstract: Implementations of the present disclosure generally relate to an improved substrate support pedestal assembly. In one implementation, the substrate support pedestal assembly includes a shaft. The substrate support pedestal assembly further includes a substrate support pedestal, mechanically coupled to the shaft. The substrate support pedestal comprises substrate support plate coated on a top surface with a ceramic material.

公开(公告)号：US12068171B2

公开(公告)日：2024-08-20

申请号：US17163102

申请日：2021-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro Yamazaki ,  Shigeru Tahara

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/465 ,  H01L21/467

CPC classification number: H01L21/467 ,  H01J37/32449 ,  H01J37/32715 ,  H01L21/02057 ,  H01L21/32136 ,  H01L21/465 ,  H01J37/32238 ,  H01J2237/334

Abstract: A method for etching an oxide semiconductor film includes: providing a substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn); supplying a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas; and etching the oxide semiconductor film by plasma generated from the processing gas.

公开(公告)号：US12068137B2

公开(公告)日：2024-08-20

申请号：US17032220

申请日：2020-09-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Reyn Tetsuro Wakabayashi ,  Carlaton Wong ,  Timothy Joseph Franklin

IPC: H01J37/32 ,  C23C16/455 ,  F16K27/00 ,  H01L21/67

CPC classification number: H01J37/32568 ,  C23C16/45559 ,  F16K27/003 ,  H01J37/3244 ,  H01J37/3255 ,  H01L21/67017 ,  H01L21/6719 ,  H01J2237/334

Abstract: A component for use in a substrate process chamber includes: a body having an opening extending partially through the body from a top surface of the body, wherein the opening includes a threaded portion for fastening the body to a second process chamber component, wherein the threaded portion includes a plurality of threads defining a plurality of rounded crests and a plurality of rounded roots, and wherein a depth of the threaded portion, being a radial distance between a rounded crest of the plurality of rounded crests and an adjacent root of the plurality of rounded roots, decreases from a first depth to a second depth at a last thread of the plurality of threads.

公开(公告)号：US12068131B2

公开(公告)日：2024-08-20

申请号：US17942040

申请日：2022-09-09

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32183 ,  H01J2237/327 ,  H01J2237/334

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：US12065734B2

公开(公告)日：2024-08-20

申请号：US17870804

申请日：2022-07-21

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： Dong Hwan Lee ,  Jae Ho Kim ,  Hyun Il Kim ,  Ho Jin Yun ,  Jae Wan Lee ,  Byung Gwan Lim

IPC: C23C16/44 ,  B08B5/00 ,  B08B9/08 ,  H01J37/32

CPC classification number: C23C16/4405 ,  B08B5/00 ,  B08B9/08 ,  H01J37/3244 ,  H01J37/32862 ,  B08B2205/00 ,  H01J2237/334

Abstract: The present disclosure relates to an apparatus and method for cleaning a chamber, and more particularly, to an apparatus and method for cleaning a chamber, which are capable of cleaning the chamber which is contaminated while depositing a thin film on a substrate. The chamber cleaning method in accordance with an exemplary embodiment is a method for cleaning a chamber configured to deposit a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into a chamber; activating and reacting the separately supplied gases with each other inside the chamber to generate a reaction gas; and firstly cleaning the chamber with the reaction gas.

公开(公告)号：US20240274409A1

公开(公告)日：2024-08-15

申请号：US18022549

申请日：2021-10-29

Applicant: PSK INC.

Inventor： Kwang-Sung YOO ,  Ju-Yong PARK

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/2007 ,  H01J2237/334

Abstract: An apparatus for treating a substrate includes a housing including an open top and a treatment space therein, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from the top, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, and an aligning unit configured to align a horizontal arrangement of the dielectric plate unit, in which a lid extending from the housing in the horizontal direction and coupled to the upper electrode unit is provided on the housing, and the aligning unit is coupled to the lid.

公开(公告)号：US20240274406A1

公开(公告)日：2024-08-15

申请号：US18562565

申请日：2022-05-02

Applicant: EN2CORE TECHNOLOGY, INC.

Inventor： Se Hong PARK ,  Yeonghoon SOHN ,  Dong JEGAL ,  Jihoon KIM ,  Sae Hoon UHM

IPC: H01J37/32 ,  H03K3/012

CPC classification number: H01J37/32155 ,  H01J37/321 ,  H01J37/32183 ,  H03K3/012 ,  H01J2237/334

Abstract: According to one embodiment of the present disclosure, a semiconductor process system could be provided, the system comprising a substrate holder where a substrate is placed and an electrode is included, and a frequency generating device providing bias power to the electrode, wherein the frequency generating device provides the bias power of different patterns to the electrode in a first period for performing a main process on the substrate and a second period for performing an auxiliary process on the substrate, and wherein at least one of the first period or the second period is adjusted to be 30 microseconds or smaller.

公开(公告)号：US12062568B2

公开(公告)日：2024-08-13

申请号：US17604320

申请日：2020-03-11

Applicant: TOKAI CARBON KOREA CO., LTD

Inventor： Kyoung Jun Kim

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/68721 ,  H01J37/32642 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

Abstract: Described herein are edge ring among components for manufacturing semiconductors used in a semiconductor manufacturing process. The SiC edge ring includes: a first deposition part having a plasma-damaged portion and a non-damaged portion and including SiC; and a second deposition part formed on the first deposition part and including SiC, wherein a boundary between the damaged portion of the first deposition part and the second deposition part includes an uneven surface.