-
公开(公告)号：US20070146697A1
公开(公告)日：2007-06-28
申请号：US11681996
申请日：2007-03-05
Applicant: Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Shunichi Matsumoto , Yukio Kembo , Ryouji Matsunaga , Keiji Sakai , Takanori Ninomiya , Tetsuya Watanabe , Hisato Nakamura , Takahiro Jingu , Yoshio Morishige , Shuichi Chikamatsu
Inventor： Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Shunichi Matsumoto , Yukio Kembo , Ryouji Matsunaga , Keiji Sakai , Takanori Ninomiya , Tetsuya Watanabe , Hisato Nakamura , Takahiro Jingu , Yoshio Morishige , Shuichi Chikamatsu
IPC: G01N21/88
CPC classification number: B82Y15/00 , G01N21/94 , G01N21/95623 , G01N21/95684 , G01N2021/8822 , G01R31/308 , H01J37/00 , H01J2237/022 , H01J2237/0225 , H01L21/67253 , H01L21/67288 , H01L21/681 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: A defect inspection apparatus includes an illumination optical unit for obliquely illuminating an object with a slit-like shaped laser, a first detection optical unit for detecting a first image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a first direction substantially normal to a surface of the object, a second detection optical unit for detecting a second image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a second direction inclined to the normal direction to the surface of the object, an image signal processing unit which processes a signal outputted from the first detection optical unit and a signal outputted from the second detection optical unit, and an output unit which outputs information processed by the image signal processing unit.
Abstract translation: 缺陷检查装置包括：用狭缝状激光器对物体进行倾斜照明的照明光学单元;第一检测光学单元，用于检测由所述狭缝状激光的照射而从物体反射的光形成的第一图像;以及 反射在基本上垂直于物体的表面的第一方向上;第二检测光学单元，用于检测由通过照射狭缝状激光而从物体反射的光形成的第二图像，并以与第二方向倾斜的第二方向反射 对象物的表面的正常方向，处理从第一检测光学单元输出的信号的图像信号处理单元和从第二检测光学单元输出的信号，以及输出单元，其输出由图像信号处理单元处理的信息 。
-
公开(公告)号：US20070146696A1
公开(公告)日：2007-06-28
申请号：US11681981
申请日：2007-03-05
Applicant: Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Shunichi Matsumoto , Yukio Kembo , Ryouji Matsunaga , Keiji Sakai , Takanori Ninomiya , Tetsuya Watanabe , Hisato Nakamura , Takahiro Jingu , Yoshio Morishige , Shuichi Chikamatsu
Inventor： Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Shunichi Matsumoto , Yukio Kembo , Ryouji Matsunaga , Keiji Sakai , Takanori Ninomiya , Tetsuya Watanabe , Hisato Nakamura , Takahiro Jingu , Yoshio Morishige , Shuichi Chikamatsu
IPC: G01N21/88
CPC classification number: B82Y15/00 , G01N21/94 , G01N21/95623 , G01N21/95684 , G01N2021/8822 , G01R31/308 , H01J37/00 , H01J2237/022 , H01J2237/0225 , H01L21/67253 , H01L21/67288 , H01L21/681 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: A method for detecting defects on a specimen includes mounting a specimen on a table with which is movable, obliquely projecting a laser as a line onto a surface of the specimen, detecting with an image sensor an image of light formed by light reflected from the specimen and passed through a filter which blocks scattered light resulting from repetitive patterns formed on the specimen, processing a signal outputted from the image sensor to extract defects of the specimen, and a displaying information of defects extracted by the signal processor.
Abstract translation: 一种检测试样缺陷的方法，其特征在于，将试样安装在可移动的台面上，将作为线的激光线倾斜投射到试样的表面上，用图像传感器检测由试样反射的光形成的光的图像 通过滤波器，该滤波器阻挡由样本上形成的重复图案产生的散射光，处理从图像传感器输出的信号，提取样本的缺陷，以及由信号处理器提取的缺陷的显示信息。
-
公开(公告)号：US07098055B2
公开(公告)日：2006-08-29
申请号：US11244078
申请日：2005-10-06
Applicant: Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Shunichi Matsumoto , Yukio Kembo , Ryouji Matsunaga , Keiji Sakai , Takanori Ninomiya , Tetsuya Watanabe , Hisato Nakamura , Takahiro Jingu , Yoshio Morishige , Shuichi Chikamatsu
Inventor： Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama , Shunichi Matsumoto , Yukio Kembo , Ryouji Matsunaga , Keiji Sakai , Takanori Ninomiya , Tetsuya Watanabe , Hisato Nakamura , Takahiro Jingu , Yoshio Morishige , Shuichi Chikamatsu
CPC classification number: B82Y15/00 , G01N21/94 , G01N21/95623 , G01N21/95684 , G01N2021/8822 , G01R31/308 , H01J37/00 , H01J2237/022 , H01J2237/0225 , H01L21/67253 , H01L21/67288 , H01L21/681 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: A defect inspection method includes radiating an illumination slit-shaped beam having lights substantially parallel to a longitudinal direction to a substrate having circuit patterns in a direction inclined at a predetermined gradient relative to the direction of a line normal to the substrate and inclined at a predetermined gradient on a surface with respect to a group of main straight lines of the circuit patterns with its longitudinal direction oriented almost perpendicularly to a direction of a movement of the substrate. Scattered light reflected by a defect such as a foreign particle existing on the illuminated substrate is received and converted into a detection signal by using an image sensor, and defect judging is effected of an extracted a signal indicating a defect such as a foreign particle on the basis of the detection signal output.
-
24.发明授权
公开(公告)号：US4367412A
公开(公告)日：1983-01-04
申请号：US187736
申请日：1980-09-16
Applicant: Richard N. Cheever
Inventor： Richard N. Cheever
Abstract: This disclosure is concerned with a process of and apparatus for producing relatively low energy electron beams through pulsed cold-cathode beam generation in a mode of operation involving an important intermediate region of a substantially linear depth-dose profile characteristic that reduces the sensitivity to possible voltage variations, and with improved triggering structures that significantly improve reliability and minimize erratic pulse generation and missing pulses, thus particularly adapting the process and apparatus for such stringent applications as production-line sterilization of surfaces, materials or workpieces passed by the apparatus.
Abstract translation: 本公开涉及通过脉冲冷阴极束产生的相对低能量电子束的生产方法和装置，该方法包括基本上线性深度剂量分布特征的重要中间区域，该特征降低了对可能的电压的敏感性 变化和改进的触发结构，显着提高了可靠性并最大程度地减少了不规则的脉冲产生和缺失的脉冲，从而特别适用于用于由设备通过的表面，材料或工件的生产线灭菌等严格应用的工艺和设备。
-
公开(公告)号：US20240063288A1
公开(公告)日：2024-02-22
申请号：US18501554
申请日：2023-11-03
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yi-Chen LO , Jung-Hao CHANG , Li-Te LIN , Pinyen LIN
IPC: H01L29/51 , H01J37/00 , H01L21/02 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/67 , H01L21/8234 , H01L27/088 , H01L29/423 , H01L29/66 , H01L29/78
CPC classification number: H01L29/517 , H01J37/00 , H01L21/02274 , H01L21/0228 , H01L21/28088 , H01L21/3065 , H01L21/31122 , H01L21/32136 , H01L21/67069 , H01L21/823431 , H01L27/0886 , H01L29/42376 , H01L29/66545 , H01L29/66553 , H01L29/6681 , H01L29/785 , H01L29/4966
Abstract: A semiconductor device includes first and second gate structures over a substrate, the first gate structure has a first width that is smaller than a second width of the second gate structure, in which a lower portion of the first gate structure having a first work-function material (WFM) layer, the first WFM layer having a top surface, a lower portion of the second gate structure having a second WFM layer, the second WFM layer having a top surface. A first gate electrode is disposed over the first WFM layer and a second gate electrode has a lower portion disposed in the second WFM layer, in which the first gate electrode has a first width that is smaller than a second width of the second gate electrode, and wherein the top surface of the second WFM layer is at a level below a top surface of the second gate electrode.
-
Patent Agency Ranking
公开(公告)号：US20180233365A1
公开(公告)日：2018-08-16
申请号：US15889828
申请日：2018-02-06
Applicant: Lam Research Corporation
Inventor： Yunsang KIM , Hyuk-Jun KWON
IPC: H01L21/223 , H01L29/167 , H01L21/324 , H01L21/67
CPC classification number: H01L21/2236 , H01J37/00 , H01L21/0217 , H01L21/0228 , H01L21/324 , H01L21/67017 , H01L21/67109 , H01L21/67115 , H01L29/167
Abstract: A method for forming a junction in a germanium (Ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes performing a plasma pretreatment on the substrate in the processing chamber for a predetermined pretreatment period using a pretreatment plasma gas mixture including hydrogen gas species. The method includes supplying a doping plasma gas mixture to the processing chamber including a phosphorous (P) gas species and an antimony (Sb) gas species. The method includes striking plasma in the processing chamber for a predetermined doping period. The method includes annealing the substrate during a predetermined annealing period to form the junction in the germanium (Ge) layer.
-
公开(公告)号：US20180218915A1
公开(公告)日：2018-08-02
申请号：US15876576
申请日：2018-01-22
Applicant: Lam Research Corporation
Inventor： Yunsang KIM , Hyuk-Jun KWON , Dong Woo PAENG , He ZHANG
IPC: H01L21/3065 , H01L21/324 , H01L21/02 , H01L21/67
CPC classification number: H01L21/3065 , H01J37/00 , H01L21/02236 , H01L21/30655 , H01L21/324 , H01L21/67069
Abstract: A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (SiGe). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. The method includes c) purging the processing chamber. The method includes d) etching the sacrificial layer and the material by supplying an etch gas mixture and striking plasma in the processing chamber.
-
公开(公告)号：US20180158709A1
公开(公告)日：2018-06-07
申请号：US15370834
申请日：2016-12-06
Applicant: ASM IP Holding B.V.
Inventor： Naoto TSUJI , Takuya SUGURI , Yozo IKEDO
IPC: H01L21/683 , H02H7/00 , C23C16/448 , C23C16/50
CPC classification number: C23C16/50 , C23C16/503 , H01J37/00 , H01L21/6833
Abstract: A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.
-
公开(公告)号：US09895870B2
公开(公告)日：2018-02-20
申请号：US15438957
申请日：2017-02-22
Inventor： Keith E. Whitener , Woo K. Lee , Jeremy T. Robinson , Nabil D. Bassim , Rhonda Michele Stroud , Paul E. Sheehan
CPC classification number: B32B43/006 , B32B37/025 , B32B37/06 , B32B38/10 , B32B2038/0048 , B32B2313/04 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C01B31/0484 , C01B32/354 , H01J37/00 , H01J37/20 , H01J37/26 , Y10S977/734 , Y10S977/891 , Y10S977/895 , Y10T156/11 , Y10T156/19
Abstract: A method of transferring functionalized graphene comprising the steps of providing graphene on a first substrate, functionalizing the graphene and forming functionalized graphene on the first substrate, delaminating the functionalized graphene from the first substrate, and applying the functionalized graphene to a second substrate.
-
公开(公告)号：US09859088B2
公开(公告)日：2018-01-02
申请号：US14701479
申请日：2015-04-30
Applicant: Lam Research Corporation
Inventor： Fayaz Shaikh
IPC: C23C16/50 , H01J37/00 , C23C16/455 , C23C16/505
CPC classification number: H01J37/00 , C23C16/45565 , C23C16/45587 , C23C16/505 , H01J37/32091 , H01J37/32568 , H01J37/32926 , H01J37/32935
Abstract: A method for depositing material layers with gap variation between film deposition operations is provided. A material layer is deposited over a substrate and is performed in a plasma chamber having a bottom electrode and a top electrode. The method sets a first gap between the bottom and top electrodes and performs plasma deposition to deposit a first film of the material layer over the substrate while the first gap is set between the bottom and top electrodes. Setting a second gap between the bottom a top electrodes and performs plasma deposition to deposit a second film of the material layer over the substrate while the second gap is set between the bottom and top electrodes. The material layer is from the first and second films and the first gap is varied to the second gap to offset pre-characterized non-uniformities when depositing the first film followed by the second film.
-
-
-
-
-
-
-
-
-
Search Results
130
records
(took 0.013 seconds)
