公开(公告)号：US20230223166A1

公开(公告)日：2023-07-13

申请号：US18008851

申请日：2021-06-11

Applicant: The Industry & Academic Cooperation in Chungnam National University (IAC)

Inventor： Eui-Tae KIM ,  Dong-Ok KIM

IPC: H01B3/18 ,  H01J37/32 ,  H01L21/02 ,  H01L29/94 ,  H01L29/51 ,  H01G4/14 ,  C23C16/26 ,  C23C16/50 ,  C23C16/52

CPC classification number: H01B3/18 ,  H01J37/321 ,  H01J37/32522 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/02274 ,  H01L21/02115 ,  H01L29/94 ,  H01L29/51 ,  H01L28/40 ,  H01G4/145 ,  C23C16/26 ,  C23C16/50 ,  C23C16/52 ,  H01J2237/3321 ,  H01J2237/182

Abstract: There is provided a high dielectric film including amorphous hydrocarbon of which a dielectric constant is 10 or more. A leakage current of the high dielectric film is 1 A/cm2 or less, and an insulation level is 1 MV/cm or more. Rms surface roughness of the high dielectric film is 20 nm or less.

公开(公告)号：US20230141688A1

公开(公告)日：2023-05-11

申请号：US17979291

申请日：2022-11-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryoji YAMAZAKI

IPC: H01J37/32 ,  B23K1/00

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  B23K1/0008 ,  H01J2237/327 ,  H01J37/321

Abstract: A plasma source comprises a metal member having an inlet and forming a wall that delimits an upstream flow of a processing gas supplied from the inlet, a ceramic member having an outlet and forming a wall that delimits a downstream flow of the processing gas discharged from the outlet, and a power supply device configured to supply a power for plasma generation into a chamber. The chamber includes the metal member and the ceramic member, and is configured to discharge an activated gas generated by producing plasma from the processing gas to the outside of the chamber through the outlet.

公开(公告)号：US20190244825A1

公开(公告)日：2019-08-08

申请号：US16386557

申请日：2019-04-17

Applicant: Mattson Technology, Inc.

Inventor： Vladimir Nagorny

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32651

Abstract: Apparatus, systems, and methods for controlling azimuthal uniformity of an etch process in a plasma processing chamber are provided. In one embodiment, a plasma processing apparatus can include a plasma processing chamber and an RF cage disposed above the plasma processing chamber. A dielectric window can separate the plasma processing chamber and the RF cage. The apparatus can include a plasma generating coil disposed above the dielectric window. The plasma generating coil can be operable to generate an inductively coupled plasma in the plasma processing chamber when energized. The apparatus further includes a conductive surface disposed within the RF cage proximate to at least a portion of the plasma generating coil. The conductive surface is arranged to generate an azimuthally variable inductive coupling between the conductive surface and the plasma generating coil when the plasma generating coil is energized.

公开(公告)号：US20190218664A1

公开(公告)日：2019-07-18

申请号：US16366507

申请日：2019-03-27

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Tetsuo YAMAMOTO ,  Kazuyuki TOYODA ,  Shun MATSUI

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  C23C16/34

CPC classification number: C23C16/455 ,  C23C16/34 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3211

Abstract: A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber. The plasma generating conductor includes a plurality of main conductor parts extending along a mainstream direction of the gas within the plasma generating chamber, and a plurality of connection conductor parts configured to electrically connect the plurality of main conductor parts with each other.

公开(公告)号：US20190148248A1

公开(公告)日：2019-05-16

申请号：US16095930

申请日：2017-04-25

Applicant: ACTIVE LAYER PARAMETRICS, INC.

Inventor： Bulent M. BASOL ,  Abhijeet JOSHI ,  Jalal ASHJAEE

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  G01R31/26 ,  G01R31/28

CPC classification number: H01L22/26 ,  G01R31/2648 ,  G01R31/2831 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32963 ,  H01J2237/24564 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20

Abstract: Methods, tools and systems for full characterization of thin and ultra-thin layers employed in advanced semiconductor device structures are disclosed.

公开(公告)号：US20190103279A1

公开(公告)日：2019-04-04

申请号：US15958560

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/02 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

CPC classification number: H01L21/3003 ,  B01D67/009 ,  C23C16/452 ,  C23F1/12 ,  H01J37/321 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/006 ,  H01J2237/332 ,  H01L21/02118 ,  H01L21/02252 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0271 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/76826

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US20190059148A1

公开(公告)日：2019-02-21

申请号：US16105365

申请日：2018-08-20

Applicant: Montgomery William Childs

Inventor： Montgomery William Childs

IPC: H05H1/46 ,  B01J19/08 ,  H01J37/32

CPC classification number: H05H1/46 ,  B01J19/088 ,  G21B1/00 ,  H01J37/32027 ,  H01J37/321 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/3266 ,  H05H2001/4697

Abstract: An ion generator including a vacuum chamber; an anode in the chamber, and two movable cathodes in the chamber whereby the distance of the cathodes relative to the anode can be varied. A servo actuated motor can be operably connected to each movable cathode to move the cathodes in the chamber and modify the plasma generated.

公开(公告)号：US20180308667A1

公开(公告)日：2018-10-25

申请号：US15960342

申请日：2018-04-23

Applicant: Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32568 ,  C23C16/45536 ,  C23C16/45544 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/327 ,  H01J2237/3323 ,  H01J2237/3344 ,  H01L21/67069

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly that includes a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. Each filament including a conductor surrounded by a cylindrical insulating shell. The plurality of filaments includes a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments. An RF power source is configured to apply a first RF input signal to the first multiplicity of filaments.

公开(公告)号：US20180269067A1

公开(公告)日：2018-09-20

申请号：US15950391

申请日：2018-04-11

Applicant: Nano-Master, Inc.

Inventor： Birol Kuyel

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45527 ,  C23C16/303 ,  C23C16/40 ,  C23C16/403 ,  C23C16/4412 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32724

Abstract: Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer/substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.

公开(公告)号：US10079134B2

公开(公告)日：2018-09-18

申请号：US15736278

申请日：2017-05-25

Applicant: Boe Technology Group Co., Ltd. ,  Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Inventor： Yu Wei ,  Jun Liu

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32119 ,  H01J37/32651 ,  H01J2237/3344

Abstract: The present disclosure provides an inductively coupled plasma device, comprising a reaction chamber, a dielectric coupling plate, and a coil above the dielectric coupling plate. The dielectric coupling plate comprises at least two layers. The dielectric coupling plate comprises a plurality of regions, each region being provided with an electric field regulating structure, the electric field regulating structure being located between the at least two layers of the dielectric coupling plate. The electric field regulating structure is configured to regulate an intensity of an electric field that enters the reaction chamber through each region of the dielectric coupling plate.