公开(公告)号：US07942969B2

公开(公告)日：2011-05-17

申请号：US11857975

申请日：2007-09-19

Applicant: Martin Riker ,  Wei W. Wang

Inventor： Martin Riker ,  Wei W. Wang

IPC: C23C16/00

CPC classification number: H01J37/32724 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32871 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/2001 ,  H01J2237/335 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67207 ,  Y10T29/49826

Abstract: A substrate cleaning chamber comprises various components, such as for example, a consumable ceramic liner, substrate heating pedestal, and process kit. The consumable ceramic liner is provided for connecting a gas outlet channel of a remote gas energizer to a gas inlet channel of a substrate cleaning chamber. The substrate heating pedestal comprises an annular plate having a substrate receiving surface with a plurality of ceramic balls positioned in an array of recesses. A process kit comprises a top plate, top liner, gas distributor plate, bottom liner, and focus ring.

Abstract translation: 衬底清洁室包括各种部件，例如可消耗陶瓷衬垫，衬底加热基座和处理套件。 消耗性陶瓷衬套用于将远程气体激发器的气体出口通道连接到衬底清洁室的气体入口通道。 基板加热基座包括具有基板接收表面的环形板，多个陶瓷球定位在凹槽阵列中。 处理套件包括顶板，顶衬，气体分配器板，底衬和聚焦环。

公开(公告)号：US20100003422A1

公开(公告)日：2010-01-07

申请号：US12480195

申请日：2009-06-08

Applicant: Norikazu NAKAMURA ,  Shoichi MIYAHARA ,  Yukiko OSHIKUBO ,  Hiroshi CHIBA

Inventor： Norikazu NAKAMURA ,  Shoichi MIYAHARA ,  Yukiko OSHIKUBO ,  Hiroshi CHIBA

IPC: C23C16/50

CPC classification number: C23C14/0605 ,  C23C14/325 ,  C23C14/564 ,  H01J37/32055 ,  H01J37/32357 ,  H01J37/32871

Abstract: A deposition apparatus includes a plasma generating unit that generates an arc discharge between a target and an anode to generate plasma; a deposition chamber in which a base is disposed; and a plasma transfer unit that transfers the plasma to the deposition chamber, wherein at least part of the plasma transfer unit is electrically separated from the plasma generating unit and the deposition chamber, and a negative voltage is applied to at least part of the plasma transfer unit.

Abstract translation: 沉积设备包括：等离子体产生单元，其在目标和阳极之间产生电弧放电以产生等离子体; 沉积室，其中设置有基座; 以及等离子体转移单元，其将所述等离子体转移到所述沉积室，其中所述等离子体转移单元的至少一部分与所述等离子体产生单元和所述沉积室电分离，并且将负电压施加到所述等离子体转移的至少一部分 单元。

公开(公告)号：US20090320677A1

公开(公告)日：2009-12-31

申请号：US12147078

申请日：2008-06-26

Applicant: Ali Shajii ,  Xing Chen ,  Andrew Cowe ,  David Burtner ,  William Robert Entley ,  ShouQian Shao

Inventor： Ali Shajii ,  Xing Chen ,  Andrew Cowe ,  David Burtner ,  William Robert Entley ,  ShouQian Shao

IPC: B01D53/22 ,  B01J19/08 ,  B01D46/46 ,  B01D45/08 ,  B01D50/00

CPC classification number: H01J37/32357 ,  H01J37/32871 ,  Y10S55/15 ,  Y10T29/4935

Abstract: A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.

Abstract translation: 用于远程等离子体源的颗粒捕集器包括具有用于耦合到远程等离子体源的室的入口和用于耦合到处理室入口的出口的主体结构。 用于远程等离子体源的颗粒捕获器还包括形成在主体结构中并与主体结构入口和主体结构出口流体连通的气体通道。 气体通道可以限定穿过主体结构的路径，其使得从通道的第一部分通过的气体中的颗粒撞击限定气体通道的第二部分的壁，该壁相对于壁的表面成一定角度。 冷却剂构件可以与气体通道热连通。

公开(公告)号：US20090288942A1

公开(公告)日：2009-11-26

申请号：US12123702

申请日：2008-05-20

Applicant: Scott Arthur Cummings

Inventor： Scott Arthur Cummings

IPC: C23C14/34

CPC classification number: B08B17/02 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32871

Abstract: A method and apparatus for increasing adhesion of particles ejected from a substrate being sputtered to interior surfaces of a vacuum chamber containing the substrate. The method includes: forming a viscous coating on a at least some regions of interior surfaces of the vacuum chamber, the viscous coating having a vapor pressure of no greater than 1/1000 of a nominal operating pressure of the vacuum chamber, the vapor pressure measured at a maximum operating temperature of the interior surfaces of the vacuum chamber that will be reached when the substrate is being bombarded by ions generated in and extracted from a plasma; and bombarding the substrate with the ions and capturing at least some of the ejected particles in the viscous coating.

Abstract translation: 一种用于增加从被溅射的基板喷射的颗粒对含有该基板的真空室的内表面附着的方法和装置。 该方法包括：在真空室的内表面的至少一些区域上形成粘性涂层，该粘性涂层的蒸汽压不超过真空室的额定工作压力的1/1000，测得的蒸气压 在基板被等离子体中产生的离子和从等离子体中提取的离子轰击时将在真空室的内表面的最大工作温度下进行; 并用离子轰击底物并捕获粘性涂层中的至少一些喷出的颗粒。

公开(公告)号：US20090057578A1

公开(公告)日：2009-03-05

申请号：US12198420

申请日：2008-08-26

Applicant: Kazuki DENPOH

Inventor： Kazuki DENPOH

IPC: G21G4/00

CPC classification number: H05H1/46 ,  H01J37/32871 ,  H01J37/32935

Abstract: A method of plasma particle simulation capable of preventing solution divergence. A space within a housing chamber of a plasma processing apparatus is divided into a plurality of cells. A weighting factor corresponding to the number of plasma particles represented by a superparticle is set in each of the divided cells. Superparticles are set in each of the divided cells using plasma particles contained in the divided cell and the set weighting factor. The behavior of the superparticles in each of the divided cells is calculated. The weighting factor becomes smaller as the divided cell is located closer to a solid wall surface of the housing chamber.

Abstract translation: 一种能够防止溶液发散的等离子体粒子模拟方法。 等离子体处理装置的容纳室内的空间被分成多个单元。 对应于由超粒子表示的等离子体粒子的数量的加权系数设置在每个分割的单元中。 使用包含在分割单元格中的等离子体粒子和设定的加权因子，将每个分割细胞中的超粒子设定。 计算每个分割细胞中超颗粒的行为。 随着分隔的细胞位于更靠近壳体室的实心壁表面，加权因子变小。

公开(公告)号：US20080142481A1

公开(公告)日：2008-06-19

申请号：US11612066

申请日：2006-12-18

Applicant: John M. White ,  Soo Young Choi

Inventor： John M. White ,  Soo Young Choi

IPC: H01L21/306 ,  C03C15/00

CPC classification number: C23C16/4401 ,  H01J37/32871 ,  H01J2237/022

Abstract: A plasma-processing chamber is configured with a particle collection conductor to remove charged particles from the chamber during plasma processing of substrates. The particle collection conductor is positioned in a processing region of the chamber and a power supply applies a DC bias to the conductor when plasma is present in the processing region. The conductor may comprise aluminum, and the power supply may be controlled by a plasma controller of the plasma-processing chamber. In one aspect, the conductor may be configured to translate through the processing region during substrate processing. A method is also provided for removing particles from the processing region of a plasma-processing chamber, comprising positioning a substrate in a processing chamber, flowing a processing gas into the processing chamber, generating a plasma in the processing chamber, and applying a DC bias to a particle collection conductor positioned in the processing chamber.

Abstract translation: 等离子体处理室配置有粒子收集导体，以在衬底的等离子体处理期间从腔室去除带电粒子。 颗粒收集导体位于室的处理区域中，并且当处理区域中存在等离子体时，电源向导体施加DC偏压。 导体可以包括铝，并且电源可以由等离子体处理室的等离子体控制器控制。 在一个方面，导体可以被配置成在衬底处理期间平移通过处理区域。 还提供了一种用于从等离子体处理室的处理区域去除颗粒的方法，包括将处理室中的基板定位在处理室中，使处理气体流入处理室，在处理室中产生等离子体，并施加DC偏压 到位于处理室中的颗粒收集导体。

公开(公告)号：US07094315B2

公开(公告)日：2006-08-22

申请号：US11022396

申请日：2004-12-22

Applicant: Jian J. Chen ,  Mukund Srinivasan ,  Eric H. Lenz

Inventor： Jian J. Chen ,  Mukund Srinivasan ,  Eric H. Lenz

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/32871 ,  H01J37/32082 ,  H01J37/32623

Abstract: A plasma confining assembly for minimizing unwanted plasma formations in regions outside of a process region in a process chamber is disclosed. The plasma confining assembly includes a first confining element and second confining element positioned proximate the periphery of the process region. The second confining element is spaced apart from the first confining element. The first confining element includes an exposed conductive surface that is electrically grounded and the second confining element includes an exposed insulating surface, which is configured for covering a conductive portion that is electrically grounded. The first confining element and the second confining element substantially reduce the effects of plasma forming components that pass therebetween. Additionally, the plasma confining assembly may include a third confining element, which is formed from an insulating material and disposed between the first confining element and the second confining element, and proximate the periphery of the process region. The third confining element further reduces the effects of plasma forming components that pass between the first confining element and the second confining element.

Abstract translation: 公开了一种用于最小化处理室中的处理区域外的区域中的不需要的等离子体形成的等离子体封闭组件。 等离子体限制组件包括靠近处理区域的周边定位的第一限制元件和第二约束元件。 第二限制元件与第一限制元件间隔开。 第一限制元件包括电接地的暴露的导电表面，并且第二限制元件包括暴露的绝缘表面，其被配置为覆盖电接地的导电部分。 第一限制元件和第二限制元件大大减少了通过它们的等离子体形成部件的影响。 另外，等离子体限制组件可以包括由绝缘材料形成并且设置在第一限制元件和第二限制元件之间以及靠近处理区域的周边的第三限制元件。 第三限制元件进一步降低了在第一限制元件和第二限制元件之间通过的等离子体形成元件的影响。

公开(公告)号：US20060157347A1

公开(公告)日：2006-07-20

申请号：US11330787

申请日：2006-01-12

Applicant: Klaus Hartig

Inventor： Klaus Hartig

IPC: C23C14/00

CPC classification number: H01J37/32871 ,  C23C14/352 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/3405 ,  H01J37/3455

Abstract: Improved sputtering chambers for sputtering thin coatings onto substrates. One sputtering chamber includes spall shields which are disposed inwardly and upwardly toward the chamber interior and toward the sputtering targets, and which can aid in the retention of overcoated sputtering material which may otherwise fall onto substrates to be coated. Another sputtering chamber includes targets having magnets which are turned inwardly relative to vertical and toward each other. The inward rotation of the magnets can serve to deposit more material toward the open bottom center of the chamber, and less toward the side walls of the chamber. Yet another sputtering chamber includes a third target disposed between and upward of the lower two targets so as to shield a portion of the sputtering chamber interior from material sputtered from the first and second targets. Some chambers have the three targets forming a triangle, for example, an isosceles or equilateral triangle. In one chamber having such a triangular configuration of sputtering targets, the first and second targets form the base of an isosceles triangle and have their magnets oriented inwardly relative to vertical and towards each other. The sputtering chambers provided can either reduce the amount of overcoat sputtering material deposited onto the interior of the chamber and/or aid in retention of overcoat sputtering material which would otherwise fall onto substrates to be coated.

Abstract translation: 改进的溅射室，用于将薄涂层溅射到基板上。 一个溅射室包括防护罩，其被设置成向内并向上朝向室内部并且朝向溅射靶，并且其可以有助于保留外涂的溅射材料，否则其可能落在待涂覆的基板上。 另一个溅射室包括具有相对于垂直和彼此向内转动的磁体的靶。 磁体的向内旋转可用于将更多的材料沉积到腔室的敞开的底部中心，并且朝向腔室的侧壁较少。 又一个溅射室包括设置在下两个靶之间和之上的第三靶，以便将溅射室内的一部分与第一和第二靶溅射的材料进行屏蔽。 一些室具有形成三角形的三个目标，例如等腰或等边三角形。 在具有溅射靶的这种三角形构造的一个室中，第一和第二靶形成等腰三角形的基部，并使其磁体相对于垂直方向和彼此朝向内侧。 所提供的溅射室可以减少沉积在室内部的外涂层溅射材料的量和/或有助于保留外涂层溅射材料，否则这些溅射材料会落在待涂覆的基板上。

公开(公告)号：US20050189069A1

公开(公告)日：2005-09-01

申请号：US11082246

申请日：2005-03-17

Applicant: Audunn Ludviksson ,  Eric Strang ,  Andrej Mitrovic

Inventor： Audunn Ludviksson ,  Eric Strang ,  Andrej Mitrovic

IPC: C23F1/00 ,  H01J37/32 ,  H05H1/00

CPC classification number: H01J37/32871 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J2237/022 ,  H01J2237/028

Abstract: A plasma processing system and method for operating a diagnostic system in conjunction with a plasma processing system are provided. The diagnostic system is in communication with a plasma processing chamber of the plasma processing system and includes a diagnostic sensor to detect a plasma process condition. The diagnostic system is configured to substantially reduce contamination of the diagnostic sensor. The method includes substantially reducing contamination of the diagnostic sensor and detecting a condition of the plasma process and/or a substrate in the processing chamber.

Abstract translation: 提供了一种与等离子体处理系统一起操作诊断系统的等离子体处理系统和方法。 诊断系统与等离子体处理系统的等离子体处理室通信，并且包括用于检测等离子体处理条件的诊断传感器。 诊断系统被配置为基本上减少诊断传感器的污染。 该方法包括显着减少诊断传感器的污染并检测处理室中的等离子体处理和/或衬底的状况。

公开(公告)号：US06933025B2

公开(公告)日：2005-08-23

申请号：US10807750

申请日：2004-03-24

Applicant: Shyh-Nung Lin ,  Mark D. Menzie ,  Joe F. Sommers ,  Daniel Owen Clawson ,  Glen T. Mori ,  Lolita L. Sharp

Inventor： Shyh-Nung Lin ,  Mark D. Menzie ,  Joe F. Sommers ,  Daniel Owen Clawson ,  Glen T. Mori ,  Lolita L. Sharp

IPC: H05H1/46 ,  B01J19/08 ,  C04B41/87 ,  C23C16/44 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/32 ,  H05H1/42 ,  B32B1/08 ,  B32B17/06 ,  C23C14/00 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32871 ,  H01J37/32458 ,  Y10S156/914 ,  Y10S156/916 ,  Y10T428/131 ,  Y10T428/1317

Abstract: A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.

Abstract translation: 用于基板处理室的部件具有由氧化铝构成的结构。 该结构具有粗糙度平均为约150至约450微英寸的粗糙表面。 氧化铝的等离子喷涂陶瓷涂层沉积在结构的粗糙表面上。 组件可以是室的圆顶形天花板。