公开(公告)号：US07710709B2

公开(公告)日：2010-05-04

申请号：US11694909

申请日：2007-03-30

Applicant: Yongki Min ,  Daewoong Suh

Inventor： Yongki Min ,  Daewoong Suh

IPC: H01G4/228

CPC classification number: H01G4/005 ,  H01G4/008 ,  H01G4/33 ,  H01L28/40

Abstract: Devices and methods for their formation, including electronic devices containing capacitors, are described. In one embodiment, a device includes a substrate and a capacitor is formed on the substrate. The capacitor includes first and second electrodes and a capacitor dielectric between the first and second electrodes. At least one of the first and second electrodes includes a metal layer having carbon nanotubes coupled thereto. In one aspect of certain embodiments, the carbon nanotubes are at least partially coated with an electrically conductive material. In another aspect of certain embodiments, the substrate comprises an organic substrate and the capacitor dielectric comprises a polymer material. Other embodiments are described and claimed.

公开(公告)号：US07705458B2

公开(公告)日：2010-04-27

申请号：US11425353

申请日：2006-06-20

Applicant: Daewoong Suh ,  Yongki Min

Inventor： Daewoong Suh ,  Yongki Min

IPC: H01L23/488

CPC classification number: H01L24/10 ,  C22C45/10 ,  H01L23/49816 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/351 ,  H05K1/09 ,  H05K1/111 ,  H05K3/3436 ,  H05K2201/0116 ,  H05K2201/10234 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A foamed bulk metallic glass electrical connection is formed on a substrate of an integrated circuit package. The foamed bulk metallic glass electrical connection exhibits a low modulus that resists cracking during shock and dynamic loading. The foamed bulk metallic glass electrical connection is used as a solder bump for communication between an integrated circuit device and external structures. A process of forming the foamed bulk metallic glass electrical connection includes mixing bulk metallic glass with a blowing agent.

Abstract translation: 在集成电路封装的基板上形成发泡体金属玻璃电连接。 发泡体金属玻璃电气连接显示出低冲击强度和动态载荷下的抗开裂性能。 发泡体金属玻璃电连接用作集成电路器件和外部结构之间的通信的焊料凸块。 形成发泡体金属玻璃电连接的方法包括将块状金属玻璃与发泡剂混合。

公开(公告)号：US20090068830A1

公开(公告)日：2009-03-12

申请号：US12218161

申请日：2008-07-10

Applicant: Daewoong Suh ,  Amran Eitan ,  Yongki Min

Inventor： Daewoong Suh ,  Amran Eitan ,  Yongki Min

IPC: H01L21/44

CPC classification number: H01L23/49827 ,  B82Y10/00 ,  C09J7/22 ,  C09J9/02 ,  C09J2201/128 ,  C09J2201/602 ,  C09J2203/326 ,  H01L23/49877 ,  H01L23/5384 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/0566 ,  H01L2224/05676 ,  H01L2224/0568 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13193 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13666 ,  H01L2224/16145 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/29 ,  H01L2224/29076 ,  H01L2224/29078 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/83203 ,  H01L2225/06527 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H05K3/323 ,  H05K2201/026 ,  Y10S977/848 ,  Y10S977/932 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

Abstract: A method of interconnecting and an interconnect is provided to connect a first component and a second component of an integrated circuit. The interconnect includes a plurality of Carbon Nanotubes (CNTs), which provide a conducting path between the first component and the second component. The interconnect further includes a passivation layer to fill the gaps between adjacent CNTs. A method of producing Anisotropic Conductive Film (ACF) and an ACF is provided. The ACF includes a plurality of CNTs, which provide a conducting path between a first side of the ACF and a second side of the ACF. The sides of the ACF can also include a conductive curable adhesive layer. In an embodiment, the conductive curable adhesive layer can incorporate a B-stage cross-linkable polymer and silver particles.

Abstract translation: 提供互连和互连的方法来连接集成电路的第一部件和第二部件。 互连包括多个碳纳米管（CNT），其在第一部件和第二部件之间提供导电路径。 互连还包括钝化层以填充相邻CNT之间的间隙。 提供制造各向异性导电膜（ACF）和ACF的方法。 ACF包括多个CNT，其在ACF的第一侧和ACF的第二侧之间提供导电路径。 ACF的侧面还可以包括导电的可固化粘合剂层。 在一个实施方案中，导电可固化粘合剂层可以并入B级可交联聚合物和银颗粒。

公开(公告)号：US07416938B2

公开(公告)日：2008-08-26

申请号：US11396394

申请日：2006-03-31

Applicant: Huankiat Seh ,  Yongki Min

Inventor： Huankiat Seh ,  Yongki Min

IPC: H01L21/8242

CPC classification number: H05K1/162 ,  H01G4/33 ,  H01L23/50 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0209 ,  H05K2201/0355 ,  H05K2203/013 ,  Y10T29/42 ,  H01L2924/00 ,  H01L2224/05599

Abstract: An integrated thin-film capacitor includes a dielectric disposed between a first electrode and a second electrode. The thin-film capacitor includes a dielectric disposed upon the first electrode, and the dielectric exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.

Abstract translation: 集成薄膜电容器包括设置在第一电极和第二电极之间的电介质。 薄膜电容器包括设置在第一电极上的电介质，并且电介质沿着由其特征尺寸限定的线显示基本上均匀的热改变的形态。 还公开了包括薄膜电容器的计算系统。

公开(公告)号：US20080142253A1

公开(公告)日：2008-06-19

申请号：US11610385

申请日：2006-12-13

Applicant: Islam Salama ,  Yongki Min ,  Huankiat Seh

Inventor： Islam Salama ,  Yongki Min ,  Huankiat Seh

IPC: H05K1/18 ,  H05K3/30

CPC classification number: H05K1/162 ,  H05K1/0269 ,  H05K3/4644 ,  H05K3/4652 ,  H05K2201/0175 ,  H05K2201/09309 ,  H05K2201/09509 ,  H05K2201/09563 ,  H05K2201/096 ,  H05K2201/09627 ,  H05K2201/09718 ,  H05K2201/09918 ,  H05K2203/0353 ,  Y10T29/4913 ,  Y10T29/49155

Abstract: A microelectronic device, a method of fabricating the device, and a system including the device. The device includes: a substrate including a polymer build-up layer, and a passive structure embedded in the substrate. The passive structure includes a top conductive layer overlying the polymer build-up layer, a dielectric layer overlying the top conductive layer, and a bottom conductive layer overlying the dielectric layer. The device further includes a conductive via extending through the polymer build-up layer and electrically insulated from the bottom conductive layer, an insulation material insulating the conductive via from the bottom conductive layer, and a bridging interconnect disposed at a side of the top conductive layer facing away from the dielectric layer, the bridging interconnect electrically connecting the conductive via to the top conductive layer.

Abstract translation: 微电子器件，制造该器件的方法以及包括该器件的系统。 该装置包括：包含聚合物累积层的基底和嵌入基底中的被动结构。 被动结构包括覆盖聚合物积聚层的顶部导电层，覆盖顶部导电层的电介质层和覆盖在电介质层上的底部导电层。 该器件还包括延伸穿过聚合物积聚层并与底部导电层电绝缘的导电通孔，将导电通孔与底部导电层绝缘的绝缘材料以及布置在顶部导电层侧面的桥接互连 背离电介质层，桥接互连将导电通孔电连接到顶部导电层。

公开(公告)号：US20070242414A1

公开(公告)日：2007-10-18

申请号：US11396394

申请日：2006-03-31

Applicant: Huankiat Seh ,  Yongki Min

Inventor： Huankiat Seh ,  Yongki Min

IPC: H04R17/00

CPC classification number: H05K1/162 ,  H01G4/33 ,  H01L23/50 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0209 ,  H05K2201/0355 ,  H05K2203/013 ,  Y10T29/42 ,  H01L2924/00 ,  H01L2224/05599

Abstract: An integrated thin-film capacitor includes a dielectric disposed between a first electrode and a second electrode. The thin-film capacitor includes a dielectric disposed upon the first electrode, and the dielectric exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.

Abstract translation: 集成薄膜电容器包括设置在第一电极和第二电极之间的电介质。 薄膜电容器包括设置在第一电极上的电介质，并且电介质沿着由其特征尺寸限定的线显示基本上均匀的热改变的形态。 还公开了包括薄膜电容器的计算系统。

公开(公告)号：US20070228517A1

公开(公告)日：2007-10-04

申请号：US11396386

申请日：2006-03-31

Applicant: Huankiat Seh ,  Yongki Min ,  Cengiz Palanduz

Inventor： Huankiat Seh ,  Yongki Min ,  Cengiz Palanduz

IPC: H01L29/00 ,  H01L21/00

CPC classification number: G06F1/1601 ,  H01G4/12 ,  H01G4/33 ,  H01L23/50 ,  H01L27/0805 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  Y10T29/435 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.

Abstract translation: 一种形成薄膜电容器的方法，该薄膜电容器包括在第一电极上的电介质薄膜的溶胶凝胶图案化，去除不想要的电介质薄膜的剥离以及使第二电极与电介质薄膜匹配。 薄膜电容器沿着由其特征尺寸限定的线显示出基本均匀的热改变的形态。 还公开了包括薄膜电容器的计算系统。

公开(公告)号：US20060289976A1

公开(公告)日：2006-12-28

申请号：US11166962

申请日：2005-06-23

Applicant: Yongki Min

Inventor： Yongki Min

IPC: H01L23/02

CPC classification number: H01L23/49822 ,  H01G4/228 ,  H01G4/33 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/12044 ,  H01L2924/15311 ,  H05K1/162 ,  H05K3/048 ,  H05K3/4652 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2201/09763 ,  H01L2924/00

Abstract: An embedded passive structure, its method of formation, and its intergration onto a substrate during fabrication are disclosed, In one embodiment the embedded passive structure is a thin film capacitor (TFC) formed using a thin film laminate that has been mounted onto a substrate. The TFC's capacitor dielectric and/or lower electrode layers are patterned in such a way as to reduce damage and improve cycle time. In one embodiment, the capacitor dielectric has a high dielectric constant and the substrate is an organic packaging substrate.

Abstract translation: 公开了嵌入式无源结构，其形成方法及其在制造过程中与衬底的集成。在一个实施例中，嵌入式无源结构是使用已经安装到衬底上的薄膜层压体形成的薄膜电容器（TFC）。 TFC的电容器电介质和/或下电极层被图案化以减少损坏并改善循环时间。 在一个实施例中，电容器电介质具有高介电常数，并且衬底是有机封装衬底。

公开(公告)号：US20060281278A1

公开(公告)日：2006-12-14

申请号：US11152328

申请日：2005-06-14

Applicant: Yongki Min

Inventor： Yongki Min

IPC: H01L21/20 ,  H01L21/44

CPC classification number: H01L27/016 ,  H01L21/4857 ,  H01L23/50 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/15311 ,  H01L2924/16152 ,  H05K1/162 ,  H05K3/025 ,  H05K3/4652 ,  H05K2201/0179 ,  H05K2201/09509 ,  H05K2201/09563 ,  H05K2201/096 ,  H05K2201/09763 ,  H05K2203/0384 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A thin-film capacitor assembly includes a first metal bottom electrode, a dielectric layer, a second metal etch-stop layer, and a subsequent metal top electrode. The first metal bottom electrode is in contact with the dielectric layer. The second metal etch-stop layer is in contact with the dielectric layer. The subsequent metal top electrode is in contact with the second metal etch-stop layer. Processing of the thin-film capacitor assembly includes totally removing a stiffener after assembling the first metal bottom electrode as a layer to the dielectric layer and the second metal etch-stop layer. The stiffener is removed from above and on the second metal etch-stop layer. The thin-film capacitor assembly is laminated to a mounting substrate.

公开(公告)号：US20060228855A1

公开(公告)日：2006-10-12

申请号：US11092357

申请日：2005-03-29

Applicant: Yongki Min ,  Cengiz Palanduz

Inventor： Yongki Min ,  Cengiz Palanduz

IPC: H01L21/8242

CPC classification number: H01L27/016 ,  H01G4/005 ,  H01G4/12 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19106 ,  H05K1/0306 ,  H05K1/141 ,  H05K1/162 ,  H05K3/107 ,  H05K2201/0195 ,  H05K2201/09236 ,  H05K2201/09509 ,  H05K2201/10378 ,  H01L2224/0401

Abstract: Methods and structures related to film capacitors are disclosed. The capacitors include electrodes in a side-by-side or laterally offset configuration instead of a usual stacked configuration. The side-by-side configuration allows the interposing of the dielectric layer between the capacitor electrodes to be formed without as stringent a fabrication environment as is conventional. The electrodes are platinum in an embodiment. The dielectric is barium strontium titanate in an embodiment.

Abstract translation: 公开了与薄膜电容器相关的方法和结构。 电容器包括并排或侧向偏移配置的电极，而不是通常的堆叠配置。 并列配置允许形成电容器电极之间的电介质层，而不会像常规那样严格的制造环境。 在一个实施例中，电极是铂。 在一个实施方案中，电介质是钛酸锶钡。