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    Method for manufacturing nanostructure and nanostructure manufactured by the same
    31.
    发明授权
    Method for manufacturing nanostructure and nanostructure manufactured by the same 有权
    制造纳米结构和纳米结构的方法

    公开(公告)号：US08865114B2

    公开(公告)日：2014-10-21

    申请号：US12769241

    申请日：2010-04-28

    Applicant: Inkyu Park ,  Seung Hwan Ko

    Inventor： Inkyu Park ,  Seung Hwan Ko

    IPC: C01G9/02

    CPC classification number: G01J1/429 ,  B81B2201/0214 ,  B81C1/00341 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01G9/02 ,  C01G19/02 ,  C01G21/21 ,  C01G29/00 ,  C01G31/02 ,  C01G39/02 ,  C01G41/02 ,  C01G45/02 ,  C01G51/00 ,  C01P2002/84 ,  C01P2004/03 ,  C01P2004/16 ,  C30B7/00 ,  C30B7/10 ,  C30B29/16 ,  C30B29/60

    Abstract: Provided are methods for producing nanostructures and nanostructures obtained thereby. The methods include heating a certain point of a substrate dipped into a precursor solution of the nanostructures so that the nanostructures are grown in a liquid phase environment without evaporation of the precursor solution. The methods show excellent cost-effectiveness because of the lack of a need for precursor evaporation at high temperature. In addition, unlike the vapor-liquid-solid (VLS) process performed in a vapor phase, the method includes growing nanostructures in a liquid phase environment, and thus provides excellent safety and eco-friendly characteristics as well as cost-effectiveness. Further, the method includes locally heating a substrate dipped into a precursor solution merely at a point where the nanostructures are to be grown, so that the nanostructures are grown directly at a desired point of the substrate. Therefore, it is possible to grow and produce nanostructures directly in a device. As a result, unlike the conventional process, it is not necessary to assemble and integrate the nanostructures produced in a sacrificial substrate into a device.

    Abstract translation: 提供了由此得到的纳米结构体和纳米结构体的制造方法。 所述方法包括加热浸入纳米结构的前体溶液中的衬底的某一点，使得纳米结构在液相环境中生长而不蒸发前体溶液。 由于在高温下不需要前体蒸发，所以这些方法显示出优异的成本效益。 此外，与气相中进行的气液固体（VLS）处理不同，该方法包括在液相环境中生长纳米结构，从而提供优异的安全性和环保特性以及成本效益。 此外，该方法包括仅在纳米结构生长的点处局部加热浸入前体溶液中的衬底，使得纳米结构直接在衬底的所需点生长。 因此，可以直接在器件中生长和生产纳米结构。 结果，与常规方法不同，不需要将在牺牲衬底中生产的纳米结构组装并整合到器件中。

    Method for Producing and Aligning Nanowires and Applications of Such a Method
    32.
    发明申请
    Method for Producing and Aligning Nanowires and Applications of Such a Method 审中-公开
    生产和对齐纳米线的方法及其应用

    公开(公告)号：US20140285224A1

    公开(公告)日：2014-09-25

    申请号：US14240265

    申请日：2012-08-20

    Applicant: Joerg Albuschies

    Inventor： Joerg Albuschies

    IPC: G01N27/04 ,  G01N33/483

    CPC classification number: G01N27/04 ,  B81B7/0006 ,  B81B2201/0214 ,  B81C1/00087 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/12 ,  C30B29/06 ,  C30B29/60 ,  G01N33/483 ,  G01N33/48721

    Abstract: In a method for producing a sensor element, a silicon nanowire having a diameter less than 50 nm is contacted via at least two points by electrodes. The nanowire and the electrodes are arranged on one plane on a substrate. Catalytically active metal nanoparticles having a diameter in the range of 0.5-50 nm are deposited on the surface of an insulating substrate and the surface and the metal nanoparticles deposited thereon are exposed to a gas flow containing a gaseous silicon component at a temperature in the range of 300-1100° C., whereupon, during a time period in the range of 10-200 minutes, a nanowire of a length in the range of 5-200 μm projecting from the substrate is formed. The nanowire projecting from the surface of the substrate is deposited in one plane with one of the contact surfaces corresponding to the surface of the insulating substrate by applying a secondary substrate, and either the nanowire deposited on the insulating substrate is contacted at two different points by electrodes or the nanowire adhering to the secondary substrate is contacted at two different points by electrodes.

    Abstract translation: 在制造传感器元件的方法中，直径小于50nm的硅纳米线通过至少两个点被电极接触。 纳米线和电极布置在基板上的一个平面上。 直径在0.5-50nm范围内的催化活性金属纳米颗粒沉积在绝缘衬底的表面上，并且沉积在其上的表面和金属纳米颗粒在包含气态硅组分的气流中暴露在范围内 为300-1100℃，于是在10-200分钟的时间段内形成从衬底突出的5-200μm范围内的长度的纳米线。 从衬底的表面突出的纳米线通过施加二次衬底而沉积在一个平面中，其中一个接触表面对应于绝缘衬底的表面，并且沉积在绝缘衬底上的纳米线在两个不同点通过 附着于二次基板的电极或纳米线通过电极在两个不同点接触。

    TRANSPORTATION DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    33.
    发明申请
    TRANSPORTATION DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 有权
    在半导体基板上具有单一集成多传感器器件的传输器件及其方法

    公开(公告)号：US20140264659A1

    公开(公告)日：2014-09-18

    申请号：US14207443

    申请日：2014-03-12

    Applicant: BISHNU PRASANNA GOGOI

    Inventor： BISHNU PRASANNA GOGOI

    IPC: B81B7/02

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

    Abstract translation: 提供了具有多个传感器的运输装置，其被配置为检测和测量不同的感兴趣的参数。 运输装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 运输装置将待测量的第一参数直接耦合到直接传感器。 相反，运输装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到运输装置。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

    Method, apparatus, and system for micromechanical gas chemical sensing capacitor
    39.
    发明授权
    Method, apparatus, and system for micromechanical gas chemical sensing capacitor 失效
    微机械气体化学感应电容器的方法，装置和系统

    公开(公告)号：US08471304B2

    公开(公告)日：2013-06-25

    申请号：US13152450

    申请日：2011-06-03

    Applicant: Gary Fedder ,  Nathan Lazarus

    Inventor： Gary Fedder ,  Nathan Lazarus

    IPC: H01L29/66

    CPC classification number: G01N27/4141 ,  B81B2201/0214 ,  B81C1/00246 ,  B81C2203/0714 ,  C23F1/20 ,  G01N27/226 ,  G01N27/4148 ,  H01L28/60

    Abstract: A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.

    Abstract translation: 提供了一种用于制造电容式环境传感器的方法，其中传感器元件通过使用互补金属氧化物半导体（CMOS）制造方法集成在具有电子学的CMOS结构中。 还提供了例如通过该方法制造的环境传感器，以及使用通过该方法制造的环境传感器的测量系统。 所描述的方法包括蚀刻掉CMOS芯片中的一个金属层以形成空腔。 然后用环境敏感介电材料填充该空腔，以在由金属粘附层形成的板之间形成感测电容器，或者由CMOS结构的其它金属层形成的触点阵列。 这种方法在易于制造的系统中提供改进的感测能力。

    Microfluidic apparatus with integrated porous-substrate/sensor for real-time (BIO) chemical molecule detection
    40.
    发明授权
    Microfluidic apparatus with integrated porous-substrate/sensor for real-time (BIO) chemical molecule detection 有权
    具有用于实时（BIO）化学分子检测的集成多孔基板/传感器的微流体装置

    公开(公告)号：US08465698B2

    公开(公告)日：2013-06-18

    申请号：US13272858

    申请日：2011-10-13

    Applicant: Mineo Yamakawa ,  John Heck ,  Selena Chan ,  Narayan Sundararajan

    Inventor： Mineo Yamakawa ,  John Heck ,  Selena Chan ,  Narayan Sundararajan

    IPC: G01N21/01 ,  B01L3/00

    CPC classification number: B01L3/502715 ,  B01J2219/00639 ,  B01L3/50255 ,  B01L3/502753 ,  B01L2300/0636 ,  B01L2300/0681 ,  B01L2300/0887 ,  B81B2201/0214 ,  Y10T137/2224

    Abstract: Microfluidic apparatus including integrated porous substrate/sensors that may be used for detecting targeted biological and chemical molecules and compounds. In one aspect, upper and lower microfluidic channels are defined in respective halves of a substrate, which are sandwiched around a porous membrane upon assembly. In other aspect, the upper and lower channels are formed such that a portion of the lower channel passes beneath a portion of the upper channel to form a cross-channel area, wherein the membrane is disposed between the two channels. In various embodiments, one or more porous membranes are disposed proximate to corresponding cross-channel areas defined by one or more upper and lower channels. The porous membrane may also have sensing characteristics, such that it produces a change in an optical and/or electronic characteristic. Accordingly, the apparatus may further include instrumentation or detection equipment to measure the changes, such as optic-based detectors and electronic instrumentation.

    Abstract translation: 微流体设备包括可用于检测目标生物和化学分子和化合物的综合多孔底物/传感器。 在一个方面，上和下微流体通道限定在基底的相应的两半中，其在组装时夹在多孔膜周围。 在另一方面，上通道和下通道形成为使得下通道的一部分穿过上通道的一部分以形成交叉通道区域，其中隔膜设置在两个通道之间。 在各种实施例中，一个或多个多孔膜设置在由一个或多个上部和下部通道限定的相应交叉通道区域附近。 多孔膜也可以具有感测特性，使得其产生光学和/或电子特性的变化。 因此，该装置还可以包括用于测量变化的仪器或检测设备，例如基于光学的检测器和电子仪器。

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