公开(公告)号：US09051176B2

公开(公告)日：2015-06-09

申请号：US12524946

申请日：2008-02-04

Applicant: Thomas G. Mason

Inventor： Thomas G. Mason

IPC: B81C3/00 ,  B81C99/00 ,  G03F7/40

CPC classification number: B81C99/008 ,  B81C3/002 ,  B81C3/005 ,  B81C2201/0149 ,  B81C2201/0159 ,  B81C2203/057 ,  G03F7/40 ,  Y10T428/24802

Abstract: Producing composite structures includes dispersing a first plurality of objects, a second plurality of objects, and a third plurality of objects in a fluid, the third and second plurality of objects having an average maximum dimension that is smaller than the first plurality of objects The first plurality of objects comprise a first, a second, a third and a forth object, each having mating surface regions The first and second objects' mating surfaces are complimentary and the third and forth objects' mating surfaces are complementary The first and second object aggregate together in response to the dispersing of the second plurality of objects in the fluid due to a depletion attraction between the first and the second object The third and forth object aggregate together in response to dispersing the third plurality of objects in the fluid due to a depletion attraction between the third and the fourth object.

Abstract translation: 生产复合结构包括将第一多个物体，第二多个物体和第三多个物体分散在流体中，第三和第二多个物体具有小于第一多个物体的平均最大尺寸。第一 多个物体包括具有配合表面区域的第一，第二，第三和第四物体。第一和第二物体的配合表面是互补的，并且第三和第四物体的配合表面是互补的。第一和第二物体聚集在一起 响应于由于第一和第二物体之间的耗尽引力而使第二多个物体在流体中的分散。第三和第四个物体响应于由于耗尽吸力而将第三多个物体分散在流体中而聚集在一起 在第三和第四个物体之间。

公开(公告)号：US09023225B2

公开(公告)日：2015-05-05

申请号：US14038345

申请日：2013-09-26

Applicant: Tokyo Electron Limited

Inventor： Kenichi Oyama ,  Hidetami Yaegashi

IPC: H01L21/306 ,  H01L21/308 ,  B81C1/00

CPC classification number: H01L21/306 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

Abstract: A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.

Abstract translation: 图案形成方法包括在基板上形成图案形成材料膜作为蚀刻靶膜，所述图案形成材料膜具有曝光时具有孔隙率的曝光部分和非曝光部分，图案化和曝光图案形成材料膜，用于 暴露部分具有孔隙率，选择性地将填充材料渗透到曝光部分的空隙中以加强曝光部分，以及通过干蚀刻去除图案形成材料膜的非曝光部分以形成预定图案。

公开(公告)号：US08986488B2

公开(公告)日：2015-03-24

申请号：US13750007

申请日：2013-01-25

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shigeki Hattori ,  Koji Asakawa ,  Hiroko Nakamura ,  Ryota Kitagawa ,  Yuriko Seino ,  Masahiro Kanno ,  Momoka Higa

IPC: B32B38/04 ,  B81C1/00 ,  H01L21/308 ,  H01L21/033

CPC classification number: H01L21/3081 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

Abstract: According to one embodiment, a pattern formation method is provided, the pattern formation includes: laminating a self-assembled monolayer and a polymer film on a substrate; causing chemical bonding between the polymer film and the self-assembled monolayer by irradiation with an energy beam to form a polymer surface layer on the self-assembled monolayer; and forming on the polymer surface layer a polymer alloy having a pattern of phase-separated structures.

Abstract translation: 根据一个实施例，提供了图案形成方法，图案形成包括：在基底上层叠自组装单层和聚合物膜; 通过用能量束照射在聚合物膜和自组装单层之间形成化学键合，以在自组装单层上形成聚合物表面层; 以及在所述聚合物表面层上形成具有相分离结构图案的聚合物合金。

公开(公告)号：US08980418B2

公开(公告)日：2015-03-17

申请号：US13427619

申请日：2012-03-22

Applicant: Seth B. Darling ,  Jeffrey W. Elam ,  Yu-Chih Tseng ,  Qing Peng

Inventor： Seth B. Darling ,  Jeffrey W. Elam ,  Yu-Chih Tseng ,  Qing Peng

IPC: B32B27/32 ,  C03C15/00 ,  C03C25/68 ,  B32B15/08 ,  H01L21/027 ,  G03F7/40 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3081 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0041 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0279 ,  H01L21/3065 ,  H01L21/3086 ,  Y10T428/31522

Abstract: A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Abstract translation: 通过连续渗透合成（SIS）由无机保护组分改性的等离子体蚀刻抗蚀剂材料和制备改性抗蚀剂材料的方法。 改进的抗蚀剂材料的特征在于相对于未改性的抗蚀剂材料具有改进的抗等离子体蚀刻或相关工艺的耐受性，从而允许将图案化特征形成到基底材料中，该基材可以是高纵横比特征。 SIS工艺通过对渗透抗蚀剂材料的气相前体的多次交替曝光而在体抗蚀材料内形成保护组分。 可以使用光刻，电子束光刻或嵌段共聚物自组装工艺来初始图案化等离子体蚀刻抗蚀剂材料。

公开(公告)号：US08974678B2

公开(公告)日：2015-03-10

申请号：US13912800

申请日：2013-06-07

Applicant: Micron Technology, Inc.

Inventor： Dan Millward

IPC: H01L21/302 ,  B81C1/00 ,  C23F1/02 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/00 ,  H01L21/027 ,  H01L21/308 ,  B05D3/00 ,  B05D5/00

CPC classification number: C23F1/02 ,  B05D3/00 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  Y10S438/947

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract translation: 嵌段共聚物可以自组装并用于本文所述的用于亚光刻图案化的方法中。 嵌段共聚物可以是二嵌段共聚物，三嵌段共聚物，多嵌段共聚物或其组合。 这样的方法可用于制造包括例如亚光刻导电线的器件。

公开(公告)号：US20150062545A1

公开(公告)日：2015-03-05

申请号：US14389437

申请日：2013-03-28

Applicant: Tokyo Electro Limited

Inventor： Makoto Muramatsu ,  Takahiro Kitano ,  Tadatoshi Tomita ,  Keiji Tanouchi

IPC: G03F7/40 ,  G03F7/20

CPC classification number: G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/2002 ,  G03F7/405 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67178

Abstract: The present invention is a pattern forming method of forming a pattern on a substrate using a block copolymer, the pattern forming method including the steps of: forming a film of a block copolymer containing at least two kinds of polymers on the substrate; heating the film of the block copolymer; irradiating the heated film of the block copolymer with ultraviolet light in an atmosphere of an inert gas; and supplying an organic solvent to the film of the block copolymer irradiated with the ultraviolet light.

Abstract translation: 本发明是使用嵌段共聚物在基板上形成图案的图案形成方法，该图案形成方法包括以下步骤：在基板上形成含有至少两种聚合物的嵌段共聚物的膜; 加热嵌段共聚物的膜; 在惰性气体气氛中用紫外线照射嵌段共聚物的加热膜; 并向照射紫外线的嵌段共聚物的膜供给有机溶剂。

公开(公告)号：US08945408B2

公开(公告)日：2015-02-03

申请号：US13918794

申请日：2013-06-14

Applicant: Tokyo Electron Limited

Inventor： Vidhya Chakrapani ,  Akiteru Ko ,  Kaushik Kumar

IPC: C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/311

CPC classification number: H01L21/31138 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/12

Abstract: Provided is a method for preparing a patterned directed self-assembly layer, comprising: providing a substrate having a block copolymer layer comprising a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer; and performing an etching process to selectively remove the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the surface of the substrate, the etching process being performed at a substrate temperature less than or equal to about 20 degrees C. The method further comprises providing a substrate holder for supporting the substrate, the substrate holder having a first temperature control element for controlling a first temperature at a central region and second temperature control element at an edge region of the substrate and setting a target value for the first and the second temperature.

Abstract translation: 提供了一种制备图案化定向自组装层的方法，包括：提供具有嵌段共聚物层的基材，所述嵌段共聚物层包含在嵌段共聚物层中限定第一图案的第一相分离聚合物和限定第二相分离聚合物的第二相分离聚合物 嵌段共聚物层中的图案; 并且执行蚀刻工艺以选择性地除去第二相分离聚合物，同时留下基材表面上的第一相分离聚合物的第一图案，蚀刻工艺在小于或等于约20的衬底温度下进行 该方法还包括提供用于支撑衬底的衬底保持器，衬底保持器具有用于控制中心区域的第一温度的第一温度控制元件和在衬底的边缘区域处的第二温度控制元件，并且设置靶 第一和第二温度的值。

公开(公告)号：US20140378592A1

公开(公告)日：2014-12-25

申请号：US14297095

申请日：2014-06-05

Applicant: Dow Global Technologies LLC ,  ROHM AND HAAS ELECTRONICS MATERIALS LLC

Inventor： Peter Trefonas, III ,  Phillip D. Hustad ,  Deyan Wang ,  Rahul Sharma ,  Mingqi Li ,  Jieqian J. Zhang

IPC: C09D183/10 ,  B05D3/00 ,  B05D3/02 ,  C09D133/16 ,  C09D153/00

CPC classification number: C09D153/00 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F293/005 ,  C08F2438/03 ,  C08G77/442 ,  C08L53/00 ,  C08L83/10 ,  G03F7/0002 ,  C08L33/12

Abstract: Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

公开(公告)号：US20140273475A1

公开(公告)日：2014-09-18

申请号：US13804112

申请日：2013-03-14

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Gerard M. Schmid ,  Richard Farrell

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/31058 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

Abstract: Methods for fabricating guide patterns and methods for fabricating integrated circuits using guide patterns are provided. In an embodiment, a method for fabricating a guide pattern includes forming a coating of a material with latent grafting sites and a photosensitive component configured to activate the latent grafting sites upon exposure over a substrate. The method exposes selected latent grafting sites in the coating to convert the selected latent grafting sites to active grafting sites. A grafting agent is bonded to the active grafting sites to form the guide pattern.

Abstract translation: 提供制造引导图案的方法和使用引导图案制造集成电路的方法。 在一个实施例中，制造引导图案的方法包括形成具有潜在接枝位置的材料的涂层和被配置为在暴露于基底上时激活潜在接枝位点的光敏部件。 该方法暴露了涂层中所选择的潜在接枝位点以将所选择的潜在接枝位点转化为活性接枝位点。 将接枝剂结合到活性接枝位点以形成引导图案。

公开(公告)号：US08834956B2

公开(公告)日：2014-09-16

申请号：US12489188

申请日：2009-06-22

Applicant: Scott Sills ,  Dan Millward

Inventor： Scott Sills ,  Dan Millward

IPC: H05K3/00 ,  B05D5/12 ,  H01L21/033 ,  B81C1/00 ,  B05D1/18

CPC classification number: H01L21/3083 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  C08J5/00 ,  C08J2353/00 ,  G03F7/0002 ,  H01L21/0337

Abstract: Some embodiments include methods of forming patterns utilizing copolymer. A main body of copolymer may be formed across a substrate, and self-assembly of the copolymer may be induced to form a pattern of structures across the substrate. A uniform thickness throughout the main body of the copolymer may be maintained during the inducement of the self-assembly. In some embodiments, the uniform thickness may be maintained through utilization of a wall surrounding the main body of copolymer to impede dispersal of the copolymer from the main body. In some embodiments, the uniform thickness may be maintained through utilization of a volume of copolymer in fluid communication with the main body of copolymer.

Abstract translation: 一些实施方案包括使用共聚物形成图案的方法。 共聚物的主体可以横跨基底形成，并且可以诱导共聚物的自组装以在基底上形成结构图案。 在自组装的诱导期间，可以保持整个共聚物主体的均匀厚度。 在一些实施方案中，可以通过利用围绕共聚物主体的壁来阻止共聚物从主体的分散而保持均匀的厚度。 在一些实施方案中，可以通过使用与共聚物主体流体连通的一定体积的共聚物来维持均匀的厚度。