Bragg grating optical fiber
    31.
    发明授权
    Bragg grating optical fiber 失效
    布拉格光栅光纤

    公开(公告)号:US06993241B2

    公开(公告)日:2006-01-31

    申请号:US10658606

    申请日:2003-09-08

    Abstract: The present invention provides an optical fiber providing high photosensitivity in the absence of hydrogen loading as well as a low numerical aperture. One aspect of the present invention relates to an optical fiber including a core, the core comprising silica doped with at least about 6 mol % germania and at least about 0.9 wt % fluorine; and a cladding surrounding the core. The optical fiber of the present invention is suitable for the production of fiber Bragg gratings.

    Abstract translation: 本发明提供了一种在不存在氢负载和低数值孔径下提供高光敏性的光纤。 本发明的一个方面涉及一种包括芯的光纤,所述芯包括掺杂有至少约6mol%的氧化锗和至少约0.9wt%的氟的二氧化硅; 以及围绕芯的包层。 本发明的光纤适用于制造光纤布拉格光栅。

    Film coated optical lithography elements and method of making
    33.
    发明授权
    Film coated optical lithography elements and method of making 有权
    薄膜涂层光刻元件及其制作方法

    公开(公告)号:US06833949B2

    公开(公告)日:2004-12-21

    申请号:US10238099

    申请日:2002-09-09

    Abstract: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.

    Abstract translation: 本发明提供涂覆光学光刻元件和涂覆光学元件的方法,特别是用于使用不大于约193nm的真空紫外光(VUV)光刻波长的240nm以下的光学光刻系统的光学光刻元件,例如VUV投影光刻系统 利用193nm或157nm区域中的波长。 光学器件利用沉积的氟氧化硅膜操纵小于250nm的真空紫外光刻光。 沉积的氟氧化硅光学涂层有助于对入射光的操纵并保护底层的光学材料,层和表面。

    Method for fabricating high-purity silica glass using sol-gel processing
    35.
    发明授权
    Method for fabricating high-purity silica glass using sol-gel processing 失效
    使用溶胶 - 凝胶法制造高纯度二氧化硅玻璃的方法

    公开(公告)号:US06698054B2

    公开(公告)日:2004-03-02

    申请号:US09750510

    申请日:2000-12-28

    Abstract: Disclosed is a method for fabricating high-purity silica glass using a sol-gel processing that includes the steps of: (a) mixing a deionized water with a fluorine compound and a dispersion agent to prepare an aqueous premix solution; (b) mixing the aqueous premix solution with a fumed silica; (c) mixing the resulting mixture to form a dispersed sol; (d) aging the sol at the ambient temperature to stabilize silica particles; and, (e) removing air voids from the sol and adding a gelation agent.

    Abstract translation: 公开了一种使用溶胶 - 凝胶法制造高纯度二氧化硅玻璃的方法,该方法包括以下步骤:(a)将去离子水与氟化合物和分散剂混合以制备含水预混溶液; (b)将水性预混物溶液与煅制二氧化硅混合; (c)将所得混合物混合以形成分散的溶胶; (d)在环境温度下老化溶胶以稳定二氧化硅颗粒; 和(e)从溶胶中除去空气空隙并加入凝胶剂。

    Oxygen doping of silicon oxyfluoride glass
    38.
    发明授权
    Oxygen doping of silicon oxyfluoride glass 失效
    氟氧化硅玻璃的氧掺杂

    公开(公告)号:US06502426B2

    公开(公告)日:2003-01-07

    申请号:US09997782

    申请日:2001-11-28

    Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

    Abstract translation: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模衬底是含有掺杂的O 2分子并且在真空紫外(VUV)波长区域中显示非常高的透射率和激光透射耐久性的“干式”氟氧化硅玻璃。 除了含氟并且具有很少或不具有OH含量之外,本发明的适用于157nm的光掩模衬底的氟氧化硅玻璃含有间隔的O 2分子,其提供了对激光曝光的改善的耐久性。 优选地,掺杂氧的氟氧化硅玻璃的特征在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。

    Nonlinear optical silica material and nonlinear optical device
    40.
    发明授权
    Nonlinear optical silica material and nonlinear optical device 有权
    非线性光学二氧化硅材料和非线性光学器件

    公开(公告)号:US06376086B1

    公开(公告)日:2002-04-23

    申请号:US09362547

    申请日:1999-07-28

    Abstract: A nonlinear optical silica material mainly consisting of SiO2—GeO2 to which hydrogen or halogen element X is added. Oxygen bonded to Ge contained in the nonlinear optical silica material is replaced by H or X, and one Ge has two Ge—O bonds and one Ge—H (or Ge—X) bond at Ge· points where nonlinearity is exhibited in the silica material. The Ge—H (or Ge—X) bond does not relate to a crystal network, so that when the polarity is oriented in order to exhibit nonlinearity at Ge·, an electric field to be applied can be lowered, and when a optical semiconductor hybrid element or the like is produced, other portions of the semiconductor elements can be prevented from being broken or degraded in performance. An insulating film can be interposed between the semiconductor substrate and the nonlinear optical silica film to prevent undesired impurities from dispersing into the semiconductor substrate and other elements and preventing a defect from being caused in the crystal of the substrate due to the silica film.

    Abstract translation: 主要由添加有氢或卤素元素X的SiO 2 -GOO组成的非线性光学二氧化硅材料。 在非线性光学二氧化硅材料中包含的与Ge结合的氧被H或X替代,并且一个Ge在Ge处具有两个Ge-O键和一个Ge-H(或Ge-X)键。 在二氧化硅材料中显示出非线性的点。 Ge-H(或Ge-X)键与晶体网络无关,因此当极性取向为在Ge表现出非线性时,可以降低要施加的电场,而当光半导体 制造混合元件等,可以防止半导体元件的其他部分的性能破坏或劣化。 可以在半导体衬底和非线性光学二氧化硅膜之间插入绝缘膜,以防止不期望的杂质分散到半导体衬底和其它元件中,并防止由于二氧化硅膜而在衬底的晶体中引起缺陷。

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