公开(公告)号：US20130112876A1

公开(公告)日：2013-05-09

申请号：US13670892

申请日：2012-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-hyun NAM ,  Hae-seok PARK

IPC: G01J5/12

CPC classification number: G01J5/12 ,  B81B2201/0207 ,  G01J5/024 ,  G01J5/0285 ,  G01J5/045 ,  G01J5/046 ,  G01J5/06 ,  G01J5/0853

Abstract: In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate.

Abstract translation: 在一些示例性实施例中，红外检测器可以包括基底; 谐振器，其与所述衬底间隔开，所述谐振器吸收入射的红外光; 接触谐振器的热电材料层，并且由于吸收的入射红外光而具有根据温度变化的可变电阻; 电连接所述热电材料层和所述基板的引线; 在所述基板和所述热电材料层之间的热分离层，所述热分离层防止热量从所述热电材料层转移到所述基板; 和/或防止入射的红外光向衬底延伸的接地层。 热分离层可以至少减少从热电材料层到基底的热传递。 接地层可以至少减少到达基板的入射红外光的量。

公开(公告)号：US20130019461A1

公开(公告)日：2013-01-24

申请号：US13553290

申请日：2012-07-19

Applicant: Hartmut Rudmann ,  Markus Rossi

Inventor： Hartmut Rudmann ,  Markus Rossi

IPC: H05K13/00 ,  G01J1/42

CPC classification number: H01L31/16 ,  B29D11/00298 ,  B29D11/00307 ,  G01J1/0209 ,  G01J1/0233 ,  G01J1/0271 ,  G01J1/0411 ,  G01J1/06 ,  G01J1/42 ,  G01J5/00 ,  G01J5/022 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/0265 ,  G01J5/045 ,  G01J5/0806 ,  G01J5/20 ,  G01J2001/061 ,  G02B3/0031 ,  G02B3/0056 ,  G02B13/0085 ,  H01L25/167 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14687 ,  H01L31/02325 ,  H01L31/167 ,  H01L2924/0002 ,  Y10T29/49002 ,  H01L2924/00

Abstract: Manufacturing opto-electronic modules (1) includes providing a substrate wafer (PW) on which detecting members (D) are arranged; providing a spacer wafer (SW); providing an optics wafer (OW), the optics wafer comprising transparent portions (t) transparent for light generally detectable by the detecting members and at least one blocking portion (b) for substantially attenuating or blocking incident light generally detectable by the detecting members; and preparing a wafer stack (2) in which the spacer wafer (SW) is arranged between the substrate wafer (PW) and the optics wafer (OW) such that the detecting members (D) are arranged between the substrate wafer and the optics wafer. Emission members (E) for emitting light generally detectable by the detecting members (D) can be arranged on the substrate wafer (PW). Single modules (1) can be obtained by separating the wafer stack (2) into separate modules.

Abstract translation: 制造光电模块（1）包括提供其上布置有检测构件（D）的衬底晶片（PW）; 提供间隔晶片（SW）; 提供光学晶片（OW），所述光学晶片包括透明部分（t），所述透明部分（t）对于通常可由检测部件检测到的光和至少一个阻挡部分（b），用于基本上衰减或阻挡通常由检测部件可检测的入射光; 以及准备其中所述间隔晶片（SW）布置在所述衬底晶片（PW）和所述光学晶片（OW）之间的晶片堆叠（2），使得所述检测构件（D）布置在所述衬底晶片和所述光学晶片之间 。 用于发射由检测部件（D）能够通常检测的光的发射部件（E）可以布置在基板晶片（PW）上。 可以通过将晶片堆叠（2）分离成单独的模块来获得单个模块（1）。

公开(公告)号：US20120241613A1

公开(公告)日：2012-09-27

申请号：US13428746

申请日：2012-03-23

Applicant: Koichi ISHII ,  Kazuhiro SUZUKI ,  Hiroto HONDA ,  Hideyuki FUNAKI ,  Risako UENO ,  Honam KWON

Inventor： Koichi ISHII ,  Kazuhiro SUZUKI ,  Hiroto HONDA ,  Hideyuki FUNAKI ,  Risako UENO ,  Honam KWON

IPC: H01L27/146

CPC classification number: G01J5/14 ,  G01J5/04 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0853 ,  G01J5/10 ,  G01J5/22 ,  H01L27/14649 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

Abstract: One embodiment provides an infrared imaging device, including: a substrate; connection wiring portions arranged in matrix form on the substrate; a first infrared detecting portion configured to convert intensity of absorbed infrared radiation into a first signal; and a second infrared detecting portion configured to convert intensity of absorbed infrared radiation into a second signal, the second infrared detecting portion being larger in thermal conductance than the first infrared detecting portion.

Abstract translation: 一个实施例提供一种红外成像装置，包括：基板; 在基板上以矩阵形式布置的连接布线部分; 第一红外线检测部，被配置为将吸收的红外辐射的强度转换为第一信号; 以及第二红外线检测部，被配置为将吸收的红外辐射的强度转换为第二信号，所述第二红外线检测部的导热性大于所述第一红外线检测部。

公开(公告)号：US20120235045A1

公开(公告)日：2012-09-20

申请号：US13422120

申请日：2012-03-16

Applicant: Seiji Kurashina ,  Masaru Miyoshi

Inventor： Seiji Kurashina ,  Masaru Miyoshi

IPC: G01J5/10

CPC classification number: G01J5/045 ,  G01J5/0215 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/06 ,  G01J5/0853 ,  G01J5/20

Abstract: The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 μm.

Abstract translation: 根据本发明的辐照热计式太赫兹波检测器具有热隔离结构，其中包括与电气布线连接的测辐射热计薄膜的温度检测部分通过包括电气的支撑部分从基板升起的状态被支撑 连接到形成在基板中的读出集成电路的布线，检测器包括形成在基板上的反射膜，形成在温度检测部分的前表面或后表面或内部位置的吸收膜，由此 光学谐振结构由反射膜和吸收膜形成，并且在反射膜上形成电介质膜。 电介质膜厚度f设定为电介质膜的上表面与温度检测部的下表面之间的气隙小于8μm。

公开(公告)号：US20120097853A1

公开(公告)日：2012-04-26

申请号：US13270633

申请日：2011-10-11

Applicant: Jean-Louis OUVRIER-BUFFET ,  Jérôme MEILHAN

Inventor： Jean-Louis OUVRIER-BUFFET ,  Jérôme MEILHAN

IPC: G01J5/10

CPC classification number: G01J5/06 ,  G01J5/02 ,  G01J5/0285 ,  G01J5/04 ,  G01J5/045 ,  G01J5/12 ,  G01J5/20 ,  G01J2005/065 ,  G01J2005/068

Abstract: A device for detecting electromagnetic radiation that comprises an active bolometer provided with a first element sensitive to said electromagnetic radiation and a reference bolometer identical to the active bolometer, provided with a second element sensitive to said electromagnetic radiation. The active bolometer and reference bolometer are arranged close to one another on the same substrate. A cover covers at least the part of the second sensitive element exposed to the electromagnetic radiation and arranges an empty space between said second sensitive element and the cover. The inner wall of the cover is constituted by an absorbent layer made from a material absorbing at least the thermal radiations emitted by the second sensitive element. A reflecting shield forms at least a part of the outer wall exposed to said electromagnetic radiation.

Abstract translation: 一种用于检测电磁辐射的装置，其包括具有对所述电磁辐射敏感的第一元件的活性测辐射热计和与活性测辐射热计相同的参考辐射热计，其具有对所述电磁辐射敏感的第二元件。 主动测辐射热计和参考测辐射热谱仪在同一基板上彼此靠近。 覆盖物覆盖暴露于电磁辐射的第二敏感元件的至少一部分，并且在所述第二敏感元件和盖之间布置空白空间。 盖的内壁由吸收层构成，吸收层由至少吸收第二敏感元件发射的热辐射的材料制成。 反射屏蔽形成暴露于所述电磁辐射的外壁的至少一部分。

公开(公告)号：US20120049066A1

公开(公告)日：2012-03-01

申请号：US12958556

申请日：2010-12-02

Applicant: Tzong-Sheng Lee

Inventor： Tzong-Sheng Lee

IPC: G01J5/06 ,  H01L21/50

CPC classification number: G01J5/045 ,  G01J5/10 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A manufacturing method for an infrared sensor includes the following steps: providing a wafer having several chips and a substrate; forming four soldering portions, a thermistor, and an infrared sensing layer on the bottom surface of each chip, wherein the soldering portions are connected electrically to the thermistor and the infrared sensing layer; disposing a soldering material onto at least one bonding location for each soldering portion; backside-etching each chip of the wafer to form a sensing film and a surrounding wall around the sensing film; bonding the wafer and the substrate; heating the soldering materials to connect the substrate and each chip of the wafer; disposing an infrared filter on the surrounding wall of each chip; cutting the wafer and the substrate to form a plurality of individual infrared sensors. The instant disclosure further provides an associated infrared sensor.

Abstract translation: 一种用于红外线传感器的制造方法包括以下步骤：提供具有多个芯片和基板的晶片; 在每个芯片的底表面上形成四个焊接部分，热敏电阻和红外感测层，其中焊接部分电连接到热敏电阻和红外感测层; 将焊接材料设置在每个焊接部分的至少一个焊接位置上; 背面蚀刻晶片的每个芯片以在感测膜周围形成感测膜和周围壁; 接合晶片和基板; 加热焊接材料以连接基板和晶片的每个芯片; 在每个芯片的周围设置红外滤光片; 切割晶片和基板以形成多个单独的红外传感器。 本公开进一步提供了相关的红外传感器。

公开(公告)号：US20110287214A1

公开(公告)日：2011-11-24

申请号：US13129601

申请日：2009-11-17

Applicant: Wolfgang Reinert ,  Jochen Quenzer ,  Kai Gruber ,  Stephan Warnat

Inventor： Wolfgang Reinert ,  Jochen Quenzer ,  Kai Gruber ,  Stephan Warnat

IPC: B32B7/00 ,  B32B3/30 ,  H05K3/30

CPC classification number: B81C1/00206 ,  B32B3/30 ,  B81B7/0038 ,  G01J5/045 ,  H01L23/26 ,  H01L2924/0002 ,  Y10T29/4913 ,  Y10T428/24174 ,  Y10T428/24612 ,  H01L2924/00

Abstract: The present invention relates to a method for forming a micro-surface structure on a substrate, in particular for producing a micro-electromechanical component, a micro-surface structure of this type, a method for producing a micro-electromechanical component having a micro-surface structure of this type and such a micro-electromechanical component. The invention is particularly relevant for components of microsystem technology (MST, micro-electromechanical systems MEMS) and the construction and connection technology for hermetically housing micro components, preferably using getter materials.

Abstract translation: 本发明涉及一种在基板上形成微表面结构的方法，特别是用于制造微机电元件的微型表面结构，这种微型表面结构的制造方法， 这种类型的表面结构和这种微机电部件。 本发明特别涉及微系统技术（MST，微机电系统MEMS）的组件以及用于气密地容纳微组件的构造和连接技术，优选使用吸气材料。

公开(公告)号：US08039285B2

公开(公告)日：2011-10-18

申请号：US11817901

申请日：2006-03-10

Applicant: Jean-Charles Souriau ,  Elisabeth Delevoye ,  Francois Baleras ,  David Henry

Inventor： Jean-Charles Souriau ,  Elisabeth Delevoye ,  Francois Baleras ,  David Henry

IPC: H01L21/00

CPC classification number: G01J5/04 ,  B81C1/00285 ,  G01J5/045 ,  H01L21/50 ,  H01L23/26 ,  H01L2924/0002 ,  Y10T428/24479 ,  H01L2924/00

Abstract: A method for installing a sorption element in a cavity including: disposing, within the cavity, a getter material, a reaction material, and a protective material, the protective material covering at least one part of the getter material so as to bury the at least one part; raising a temperature up to at least one removal temperature; and moving the protective material towards the reaction material by reaction between the protective material and the reaction material so that at least one portion of the part of the getter material is no longer covered with the protective material.

Abstract translation: 一种用于将吸附元件安装在空腔中的方法，包括：在空腔内设置吸气剂材料，反应材料和保护材料，所述保护材料覆盖吸气剂材料的至少一部分，以至少埋入 一部分 升高至少一个去除温度的温度; 以及通过所述保护材料和所述反应材料之间的反应将所述保护材料移向所述反应材料，使得所述吸气剂材料的所述部分的至少一部分不再被所述保护材料覆盖。

公开(公告)号：US08003945B1

公开(公告)日：2011-08-23

申请号：US12868628

申请日：2010-08-25

Applicant: Jacob Y Wong

Inventor： Jacob Y Wong

IPC: G01J5/02

CPC classification number: G01J5/04 ,  G01J5/0014 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/022 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0803 ,  G01J5/0809 ,  G01J5/0818 ,  G01J5/0846 ,  G01J5/0862 ,  G01J5/0875 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An NDIR gas sensor is housed within a mechanical housing made up of a can and a header housing. The header housing body contains a tunnel waveguide sample chamber. The header housing also has a top surface with a pair of windows formed in it and a signal detector, a reference detector, a MEMS source and a signal processor mounted to it. The can has inner reflective surfaces and the reference detector and the signal detector are affixed to the top surface so that the inner reflective surfaces of the can and the tunnel waveguide sample chamber create a signal channel path length detected by the signal detector that is greater than a reference channel path length detected by the reference detector and an absorption bias between the signal and reference outputs can be used to determine a gas concentration in the sample chamber. Both the signal detector and the reference detector have an identical narrow band pass filter with the same Center Wavelength (“CWL”), Full Width Half Maximum (FWHM) and transmittance efficiency at the CWL.

Abstract translation: NDIR气体传感器安装在由罐和集管壳体组成的机械壳体内。 插头壳体包含隧道波导样品室。 头部外壳还具有形成在其中的一对窗口的顶表面和安装到其上的信号检测器，参考检测器，MEMS源和信号处理器。 罐具有内部反射表面，并且参考检测器和信号检测器固定在顶部表面上，使得罐和隧道波导样品室的内部反射表面产生由信号检测器检测到的信号通道路径长度大于 可以使用由参考检测器检测的参考通道路径长度和信号与参考输出之间的吸收偏差来确定样品室中的气体浓度。 信号检测器和参考检测器都具有相同的窄带通滤波器，具有相同的中心波长（“CWL”），全宽度最大值（FWHM）和CWL处的透射率效率。

公开(公告)号：US20110164655A1

公开(公告)日：2011-07-07

申请号：US13050235

申请日：2011-03-17

Applicant: Shinichiro Nawai ,  Tadamasa Miura

Inventor： Shinichiro Nawai ,  Tadamasa Miura

IPC: G01J5/00 ,  G01K7/00

CPC classification number: G01J5/20 ,  G01J5/02 ,  G01J5/024 ,  G01J5/04 ,  G01J5/045 ,  G01J5/046 ,  G01J5/06

Abstract: A thermal sensor that includes a ceramic body formed of NTC thermister ceramic, heat sensing part electrodes, temperature compensation part electrodes, external electrodes, and a cavity. A heat sensing part, which is the surface layer of the ceramic body, is heated by, for example, radiant heat transfer, reducing the resistance value of a thermistor ceramic layer between the heat sensing part electrodes. Since the heat of the heat sensing part of the ceramic body is insulated by the cavity and thus prevented from diffusing, the heat capacity of the heat sensing unit is reduced, obtaining high sensitivity and high responsiveness.

Abstract translation: 一种热传感器，包括由NTC热敏电阻陶瓷形成的陶瓷体，热敏部分电极，温度补偿部分电极，外部电极和空腔。 作为陶瓷体的表面层的感热部通过例如辐射传热加热，降低了热敏电阻陶瓷层在感热部电极之间的电阻值。 由于陶瓷体的热敏部分的热量被空腔绝缘，从而防止扩散，所以热传感器的热容量降低，获得高灵敏度和高响应性。