Semiconductor package with low resistance package-to-die interconnect scheme for reduced die stresses
    31.
    发明申请
    Semiconductor package with low resistance package-to-die interconnect scheme for reduced die stresses 审中-公开
    具有低电阻封装到管芯互连方案的半导体封装,用于降低管芯应力

    公开(公告)号:US20030116860A1

    公开(公告)日:2003-06-26

    申请号:US10023723

    申请日:2001-12-21

    Abstract: A low resistance package-to-die interconnect scheme for reduced die stresses includes a relatively low melting temperature and yield strength solder on the die and a relatively higher melting temperature and electrically conductive material such as copper on the substrate. A soldered joint connects the solder to the electrically conductive material to couple/connect the die and substrate to one another. The soldered joint is formed by heating the die and solder thereon to at least the melting temperature of the solder and thereafter contacting the molten solder with the conductive material on the substrate, which is at a substantially lower temperature for minimizing residual stress from soldering due to coefficient of thermal expansion mismatch between the substrate and die.

    Abstract translation: 用于减小管芯应力的低电阻封装到管芯互连方案包括相对低的熔化温度和管芯上的屈服强度焊料以及相对较高的熔化温度和导电材料(例如基底上的铜)。 焊接接头将焊料连接到导电材料以将管芯和衬底彼此连接/连接。 钎焊接头是通过将模具加热至其上的至少熔化温度形成的,然后使熔融焊料与衬底上的导电材料接触,该导电材料处于基本上较低的温度,以使由于焊接造成的残余应力最小化 基板和模具之间的热膨胀系数不匹配。

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