公开(公告)号：US20250105012A1

公开(公告)日：2025-03-27

申请号：US18896482

申请日：2024-09-25

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Giueseppe Alessio Verni ,  Petro Deminskyi ,  Balaji Kannan ,  Eric Jen cheng Liu ,  Fu Tang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/28

Abstract: Aspects of the disclosure relate to the field of semiconductor devices, including methods and systems for manufacturing semiconductor devices. More particularly, semiconductor structures comprise a dipole layer, which can be formed from a metal and carbon containing layer. Further described are related methods, deposition systems, and devices.

公开(公告)号：US20250092513A1

公开(公告)日：2025-03-20

申请号：US18970001

申请日：2024-12-05

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US20250087478A1

公开(公告)日：2025-03-13

申请号：US18883125

申请日：2024-09-12

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah

IPC: H01L21/02

Abstract: Methods for forming a metal silicate layer for controlling a threshold voltage of metal-oxide semiconductor field effect transistor (MOSFET) are disclosed. The methods include forming a metal silicate threshold adjusting layer on a substrate by contacting the substrate with a precursor comprising an organosilanol precursor or a siloxide precursor.

公开(公告)号：US12227835B2

公开(公告)日：2025-02-18

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US12104244B2

公开(公告)日：2024-10-01

申请号：US17953769

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20240234129A1

公开(公告)日：2024-07-11

申请号：US18402950

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Michael Eugene Givens ,  Eric Jen Cheng Liu ,  Eric James Shero ,  Fu Tang ,  Marko Tuominen ,  Eva Elisabeth Tois ,  Andrea Illiberi ,  Tatiana Ivanova ,  Paul Ma ,  Gejian Zhao

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02178 ,  H01L21/02208 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/31111

Abstract: Methods and systems for forming structure comprising a threshold voltage tuning layer are disclosed. Exemplary methods include providing a treatment reactant to a reaction chamber to form a treated surface on the substrate surface and depositing threshold voltage tuning material overlying the treated surface. Additionally or alternatively, exemplary methods can include direct formation of metal silicide layers. Additionally or alternatively, exemplary methods can include use of an etchant.

公开(公告)号：US12031206B2

公开(公告)日：2024-07-09

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

CPC classification number: C23C16/14 ,  C23C16/18 ,  C23C16/4408

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20240177992A1

公开(公告)日：2024-05-30

申请号：US18519172

申请日：2023-11-27

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Shaoren Deng ,  Giuseppe Alessio Verni ,  Daria Nevstrueva ,  Marko Tuominen ,  Charles Dezelah ,  Daniele Chiappe ,  Eva Elisabeth Tois ,  Viraj Madhiwala ,  Michael Givens

IPC: H01L21/02

CPC classification number: H01L21/02337 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/0228

Abstract: The disclosure relates to methods of forming organic polymers comprising polyimide and layers comprising the same and to methods of reducing polyamic acid content of an organic polymer. The embodiments of the disclosure further relate to methods of fabricating semiconductor devices, to selectively depositing a material on a surface of a semiconductor substrate and to semiconductor processing assemblies. The methods are characterized by contacting a polyimide-containing material, such as a layer, with a modifying agent that increases the proportion of polyimide in the organic polymer material.

公开(公告)号：US20240153767A1

公开(公告)日：2024-05-09

申请号：US18386128

申请日：2023-11-01

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Andrea Illiberi ,  Michael Givens ,  Charles Dezelah ,  Eric Shero

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

CPC classification number: H01L21/02565 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

Abstract: Disclosed are methods and systems for depositing layers including a p-type semiconducting oxide onto a surface of a substrate. The deposition process includes a cyclical deposition process. Exemplary structures in which the layers may be incorporated include 3D NAND cells, memory devices, metal-insulator-metal structured, and DRAM capacitors.

公开(公告)号：US20240110277A1

公开(公告)日：2024-04-04

申请号：US18530653

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/34 ,  C23C16/45527 ,  C23C16/458

Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.