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41.发明授权Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna 有权具有侧RF馈电和螺旋线圈天线的对称感应耦合等离子体源公开(公告)号：US09449794B2
公开(公告)日：2016-09-20
申请号：US14270578
申请日：2014-05-06
Applicant: APPLIED MATERIALS, INC.
Inventor： Andrew Nguyen , Kartik Ramaswamy , Jason A. Kenney , Shahid Rauf , Kenneth S. Collins , Yang Yang , Steven Lane , Yogananda Sarode Vishwanath
IPC: H01J7/24 , H01J37/32 , C23C16/455 , C23C16/509 , H05H1/46
CPC classification number: H01J37/3211 , C23C16/45563 , C23C16/509 , H01J37/32174 , H05H1/46 , H05H2001/4667
Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.
Abstract translation: 等离子体反应器具有架空多重线圈天线，包括平行的螺旋线圈天线以及围绕对称和径向射频馈送的对称和径向射频馈送以及圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。
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42.发明授权Independent control of RF phases of separate coils of an inductively coupled plasma reactor 有权电感耦合等离子体反应器的单独线圈的RF相的独立控制公开(公告)号：US09161428B2
公开(公告)日：2015-10-13
申请号：US13804616
申请日：2013-03-14
Applicant: APPLIED MATERIALS, INC.
Inventor： Kenneth S. Collins , Satoru Kobayashi , Lawrence Wong , Jonathan Liu , Yang Yang , Kartik Ramaswamy , Shahid Rauf
CPC classification number: H05H1/46 , H01J37/321 , H01J37/32174 , H05H2001/4682
Abstract: Plasma distribution is controlled in a plasma reactor by controlling the phase differences between different RF coil antennas, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.
Abstract translation: 通过相位锁定反馈控制回路根据期望或用户选择的相位差控制不同RF线圈天线之间的相位差，等离子体反应器中的等离子体分布被控制。
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43.发明授权公开(公告)号：US08734664B2
公开(公告)日：2014-05-27
申请号：US13958898
申请日：2013-08-05
Applicant: Applied Materials, Inc.
Inventor： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Douglas A. Buchberger, Jr. , Lawrence Wong , Nipun Misra
CPC classification number: H01J37/32064 , H01J37/32082 , H01J37/32174 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67109 , H01L21/6833
Abstract: A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.
Abstract translation: 一种控制等离子体反应器中等离子体参数分布的方法，其具有RF驱动电极和与RF驱动电极相对的两个（或更多个）对置电极并且面对处理区的不同部分。 该方法包括提供连接在相应的对置电极和接地之间的两个（或多个）可变电抗，并且控制可变电抗以改变诸如等离子体离子密度或离子能量之类的等离子体参数的分布。
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44.发明申请公开(公告)号：US20140034612A1
公开(公告)日：2014-02-06
申请号：US13958898
申请日：2013-08-05
Applicant: APPLIED MATERIALS, INC.
Inventor： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Douglas A. Buchberger, JR. , Lawrence Wong , Nipun Misra
IPC: H01J37/32
CPC classification number: H01J37/32064 , H01J37/32082 , H01J37/32174 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67109 , H01L21/6833
Abstract: A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.
Abstract translation: 一种控制等离子体反应器中等离子体参数分布的方法，其具有RF驱动电极和与RF驱动电极相对的两个（或更多个）对置电极并且面对处理区的不同部分。 该方法包括提供连接在相应的对置电极和接地之间的两个（或多个）可变电抗，并且控制可变电抗以改变诸如等离子体离子密度或离子能量之类的等离子体参数的分布。
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45.发明申请INDEPENDENT CONTROL OF RF PHASES OF SEPARATE COILS OF AN INDUCTIVELY COUPLED PLASMA REACTOR 有权感应耦合等离子体反应器的独立线圈的RF相位的独立控制公开(公告)号：US20130284370A1
公开(公告)日：2013-10-31
申请号：US13804616
申请日：2013-03-14
Applicant: APPLIED MATERIALS, INC.
Inventor： Kenneth S. Collins , Satoru Kobayashi , Lawrence Wong , Jonathan Liu , Yang Yang , Kartik Ramaswamy , Shahid Rauf
IPC: H05H1/46
CPC classification number: H05H1/46 , H01J37/321 , H01J37/32174 , H05H2001/4682
Abstract: Plasma distribution is controlled in a plasma reactor by controlling the phase differences between different RF coil antennas, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.
Abstract translation: 通过相位锁定反馈控制回路根据期望或用户选择的相位差控制不同RF线圈天线之间的相位差，等离子体反应器中的等离子体分布被控制。
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Patent Agency Ranking
公开(公告)号：US20130284369A1
公开(公告)日：2013-10-31
申请号：US13632302
申请日：2012-10-01
Applicant: APPLIED MATERIALS, INC.
Inventor： Satoru Kobayashi , Lawrence Wong , Jonathan Liu , Yang Yang , Kartik Ramaswamy , Shahid Rauf , Shane C. Nevil , Kallol Bera , Kenneth S. Collins
IPC: C23C16/505 , B05C9/00
CPC classification number: C23C16/505 , B05C9/00 , H01J37/32091 , H01J37/32174 , H01J37/3299
Abstract: Plasma distribution is controlled in a plasma reactor by controlling the phase difference between opposing RF electrodes, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.
Abstract translation: 通过相位锁定反馈控制回路根据期望或用户选择的相位差控制相对RF电极之间的相位差，在等离子体反应器中控制等离子体分布。
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公开(公告)号：US12293897B2
公开(公告)日：2025-05-06
申请号：US18115537
申请日：2023-02-28
Applicant: Applied Materials, Inc.
Inventor： Kartik Ramaswamy , Yue Guo , A N M Wasekul Azad , Yang Yang , Nicolas J. Bright
IPC: H01J37/32
Abstract: A method and apparatus for spatially switching radio frequency (RF) power from a single RF power generator to a selected one of two or more impedance matching networks coupled to associated RF electrodes for forming plasma in a plasma chamber. Full RF power may be switched within microseconds to the selected one of the two or more impedance matching networks. The two or more impedance matching networks may be coupled to one or more plasma generating electrodes. The two or more impedance matching networks may be interleaved during plasma processing recipe operation. Impedance matching networks can alternate back and forth during operation of a plasma processing recipe. This interleaving in operation and impedance transformation capabilities may also be performed with more than two impedance matching networks, and may be beneficial in enabling the use of fixed tuned impedance matching networks instead of requiring variable impedance matching networks having variable tuning capabilities.
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公开(公告)号：US11972924B2
公开(公告)日：2024-04-30
申请号：US17835864
申请日：2022-06-08
Applicant: Applied Materials, Inc.
Inventor： A N M Wasekul Azad , Kartik Ramaswamy , Yang Yang , Yue Guo , Fernando Silveira
CPC classification number: H01J37/32091 , H03K17/687 , H01J2237/327
Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.
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公开(公告)号：US20230187176A1
公开(公告)日：2023-06-15
申请号：US17551698
申请日：2021-12-15
Applicant: Applied Materials, Inc.
Inventor： Kartik Ramaswamy , Kostiantyn Achkasov , Nicolas J. Bright , Fernando M. Silveira , Yang Yang , Yue Guo
IPC: H01J37/32
CPC classification number: H01J37/32247 , H01J37/32091 , H01J37/321
Abstract: A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.
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公开(公告)号：US11476090B1
公开(公告)日：2022-10-18
申请号：US17410803
申请日：2021-08-24
Applicant: Applied Materials, Inc.
Inventor： Kartik Ramaswamy , Yang Yang , Yue Guo
Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first output node and electrical ground node. The waveform generator also includes a third switch coupled between the voltage source circuitry and a second output node of the waveform generator, the second output node being configured to be coupled to the chamber, and a fourth switch coupled between the second output node and the electrical ground node.
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