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    Thin Micromachined Structures
    41.
    发明申请
    Thin Micromachined Structures 有权
    薄微加工结构

    公开(公告)号：US20020081765A1

    公开(公告)日：2002-06-27

    申请号：US09749171

    申请日：2000-12-27

    Inventor： Cleopatra Cabuz ,  Jeffrey Alan Ridley

    IPC: H01L021/00

    CPC classification number: B81C1/0015 ,  B81B2201/0228 ,  B81C2201/019

    Abstract: Methods for making thin silicon layers suspended over recesses in glass wafers or substrates are disclosed. The suspended silicon wafers can be thin and flat, and can be made using methods not requiring heavy doping or wet chemical etching of the silicon. Devices suitable for production using methods according to the invention include tuning forks, combs, beams, inertial devices, and gyroscopes. One embodiment of the present invention includes providing a thin silicon wafer, and a glass wafer or substrate. Recesses are formed in one surface of the glass wafer, and electrodes are formed in the recesses. The silicon wafer is then bonded to the glass wafer over the recesses. The silicon wafer is them etched to impart the desired suspended or silicon wafer structure. In another embodiment of the present invention, the silicon wafer has a patterned metal layer. The silicon wafer is bonded to the glass wafer, with the patterned metal layer positioned adjacent the recesses in the glass wafer. The silicon wafer is selectively etched down to the metal layer, which serves as an etch stop. The metalized layer can provide sharper feature definition at the silicon-metalization layer interface, and may also serve to seal gasses within the recessed cavities of the glass wafer during the silicon etching process. The metal layer can then be subsequently removed.

    Abstract translation: 公开了将薄硅层悬浮在玻璃晶片或衬底中的凹槽上的方法。 悬浮的硅晶片可以是薄且平坦的，并且可以使用不需要对硅进行重掺杂或湿化学蚀刻的方法制成。 适用于根据本发明的方法生产的装置包括调谐叉，梳，梁，惯性装置和陀螺仪。 本发明的一个实施例包括提供薄硅晶片和玻璃晶片或基板。 凹部形成在玻璃晶片的一个表面上，电极形成在凹部中。 然后将硅晶片在凹槽上结合到玻璃晶片。 硅晶片被刻蚀以赋予所需的悬浮或硅晶片结构。 在本发明的另一个实施例中，硅晶片具有图案化的金属层。 硅晶片结合到玻璃晶片，图案化金属层位于玻璃晶片中的凹槽附近。 硅晶片被选择性地向下蚀刻到用作蚀刻停止层的金属层。 金属化层可以在硅 - 金属化层界面处提供更清晰的特征定义，并且还可以用于在硅蚀刻工艺期间将气体密封在玻璃晶片的凹陷空腔内。 然后可以随后去除金属层。

    CAPACITIVE SENSOR
    42.
    发明公开
    CAPACITIVE SENSOR 审中-公开

    公开(公告)号：US20240092630A1

    公开(公告)日：2024-03-21

    申请号：US18263267

    申请日：2022-01-17

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Chunzhi DONG ,  Hiroyuki AIZAWA

    IPC: B81B3/00

    CPC classification number: B81B3/0021 ,  B81B2201/0228 ,  B81B2203/0307 ,  B81B2203/04

    Abstract: A capacitive sensor includes at least one support member, a first anchor member, a second anchor member, a first connecting member, and a second connecting member. The first anchor member is fixed to only the first substrate of the first substrate and the second substrate. The second anchor member is fixed to the first substrate and the second substrate. The first connecting member is separate from the first substrate and the second substrate and connects the first anchor member to the movable member. The second connecting member connects the first anchor member to the second anchor member. The first connecting member includes a first elastic member which is elastically deformable. The second connecting member includes at least one second elastic member which is separate from the first substrate and the second substrate and which is elastically deformable.

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