公开(公告)号：US20150137068A1

公开(公告)日：2015-05-21

申请号：US14395626

申请日：2013-04-19

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： Sebastian Thimotee Bartsch ,  Mihai Adrian Ionescu

IPC: H03H9/24 ,  B81B3/00

CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。 在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得 通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

公开(公告)号：US20120228504A1

公开(公告)日：2012-09-13

申请号：US13498795

申请日：2009-09-29

Applicant: Takanori Maeda ,  Takahiro Kawano ,  Kenjiro Fujimoto ,  Atsushi Onoe

Inventor： Takanori Maeda ,  Takahiro Kawano ,  Kenjiro Fujimoto ,  Atsushi Onoe

IPC: G01J5/02

CPC classification number: G01J5/02 ,  B81B3/007 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81B2203/019 ,  G01J5/024

Abstract: A MEMS sensor has a membrane 3 in a polygon released via a support portion 2, and the membrane 3 has a reinforcement rib portion 6 made up of a plurality of radially extending rib portions 6a and a plurality of divisional membranes 7 constructed between adjacent two rib portions 6a, 6a and formed in a polygon with the two rib portions 6a, 6a as two sides.

Abstract translation: MEMS传感器具有通过支撑部分2释放的多边形膜3，膜3具有由多个径向延伸的肋部分6a和多个分隔膜7构成的加强肋部分6，该分隔膜7在相邻的两个肋 部分6a，6a并且以两个肋部6a，6a为两侧形成为多边形。

公开(公告)号：US08128282B2

公开(公告)日：2012-03-06

申请号：US11813308

申请日：2006-01-04

Applicant: Ivo Rangelow ,  Tzvetan Ivanov ,  Katerina Ivanova

Inventor： Ivo Rangelow ,  Tzvetan Ivanov ,  Katerina Ivanova

IPC: G01K5/62

CPC classification number: G01J5/40 ,  B81B3/0018 ,  B81B2201/0278 ,  G01J5/44

Abstract: A microsystem component with a device (3) deformable under the influence of temperature changes is disclosed. The device comprises at least one first (4, 5) and second (8) element with differing thermal expansion coefficients and different thermal conductivities. The elements (4, 5; 8) are physically separate and arranged and connected to each other such that the device (3) assumes flexure states which are dependent on the temperature.

Abstract translation: 公开了一种具有在温度变化影响下可变形的装置（3）的微系统部件。 该装置包括具有不同热膨胀系数和不同导热率的至少一个第一（4,5）和第二（8）元件。 元件（4,5; 8）在物理上是分开的并且彼此连接并且连接，使得装置（3）呈现取决于温度的弯曲状态。

公开(公告)号：US07911010B2

公开(公告)日：2011-03-22

申请号：US11879462

申请日：2007-07-17

Applicant: Joseph R. Stetter

Inventor： Joseph R. Stetter

IPC: H01L29/82

CPC classification number: B81B3/0059 ,  B81B2201/0214 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2203/0118

Abstract: A universal microelectromechanical MEMS nano-sensor platform having a substrate and conductive layer deposited in a pattern on the surface to make several devices at the same time, a patterned insulation layer, wherein the insulation layer is configured to expose one or more portions of the conductive layer, and one or more functionalization layers deposited on the exposed portions of the conductive layer. The functionalization layers are adapted to provide one or more transducer sensor classes selected from the group consisting of: radiant, electrochemical, electronic, mechanical, magnetic, and thermal sensors for chemical and physical variables.

Abstract translation: 一种通用微机电MEMS纳米传感器平台，其具有在表面上以图案沉积的衬底和导电层，以同时制造多个器件，图案化绝缘层，其中绝缘层被配置为暴露导电的一个或多个部分 层和沉积在导电层的暴露部分上的一个或多个官能化层。 功能化层适于提供从由以下组成的组中选择的一个或多个换能器传感器类：用于化学和物理变量的辐射，电化学，电子，机械，磁性和热传感器。

公开(公告)号：US20110002359A1

公开(公告)日：2011-01-06

申请号：US12302677

申请日：2007-04-23

Applicant: Hubert Benzel ,  Simon Armbruster ,  Arnim Hoechst ,  Christoph Schelling ,  Ando Feyh

Inventor： Hubert Benzel ,  Simon Armbruster ,  Arnim Hoechst ,  Christoph Schelling ,  Ando Feyh

IPC: G01K7/01 ,  C25D5/00

CPC classification number: B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2207/015 ,  B81C2201/0109 ,  G01J5/06 ,  G01J5/20

Abstract: A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.

Abstract translation: 特别是用于空间分辨检测的传感器包括基板，至少一个微图案化的传感器元件，其具有值随温度变化的电特性，以及在空腔上方的至少一个隔膜，传感器元件设置在 所述至少一个隔膜的下侧，并且所述传感器元件经由连接线接触，所述连接线在隔膜的顶部或下方延伸。 特别地，多个传感器元件可以形成为通过外延形成的单晶层内的二极管像素。 可以在隔膜内形成以弹性和绝缘方式容纳各个传感器元件的悬挂弹簧。

公开(公告)号：US20100127172A1

公开(公告)日：2010-05-27

申请号：US12623318

申请日：2009-11-20

Applicant: Babak Nikoobakht

Inventor： Babak Nikoobakht

IPC: G01J5/02 ,  H01L31/0352 ,  H01L21/04

CPC classification number: G01J5/02 ,  B81B3/0081 ,  B81B2201/0278 ,  G01J5/023 ,  G01J5/08 ,  G01J5/0853

Abstract: This disclosure provides methods to integrate heat generating nanoparticles to microelectromechanical (MEMs) and photonic devices such as microbolometers and thermopiles for better photodetection and electrical energy generation. Nanoparticles include noble metal and semiconductor nanocrystals of different shapes, as light sensing and heat generating materials.

Abstract translation: 本公开提供了将发热纳米颗粒与微机电（MEM）和光子器件（例如微量热探测器和热电堆）相集成的方法，以获得更好的光电检测和电能产生。 纳米颗粒包括不同形状的贵金属和半导体纳米晶体，作为光感测和发热材料。

公开(公告)号：US20080044939A1

公开(公告)日：2008-02-21

申请号：US11744971

申请日：2007-05-07

Applicant: Androula Nassiopoulou ,  Grigoris Kaltsas ,  Dimitrios Pagonis

Inventor： Androula Nassiopoulou ,  Grigoris Kaltsas ,  Dimitrios Pagonis

IPC: H01L21/02

CPC classification number: G01F1/6888 ,  B81B2201/0278 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C2201/0114 ,  B81C2201/0115 ,  G01F1/6845 ,  G01K7/028

Abstract: This invention provides a miniaturized silicon thermal flow sensor with improved characteristics, based on the use of two series of integrated thermocouples (6, 7) on each side of a heater (4), all integrated on a porous silicon membrane (2) on top of a cavity (3). Porous silicon (2) with the cavity (3) underneath provides very good thermal isolation for the sensor elements, so as the power needed to maintain the heater (4) at a given temperature is very low. The formation process of the porous silicon membrane (2) with the cavity (3) underneath is a two-step single electrochemical process. It is based on the fact that when the anodic current is relatively low, we are in a regime of porous silicon formation, while if this current exceeds a certain value we turn into a regime of electropolishing. The process starts at low current to form porous silicon (2) and it is then turned into electropolishing conditions to form the cavity (3) underneath. Various types of thermal sensor devices, such as flow sensors, gas sensors, IR detectors, humidity sensors and thermoelectric power generators are described using the proposed methodology. Furthermore the present invention provides a method for the formation of microfluidic channels (16) using the same technique of porous silicon (17) and cavity (16) formation.

Abstract translation: 本发明提供了一种基于在加热器（4）的每一侧上使用两个集成的热电偶（6,7）的系列，具有改进的特性的小型化硅热流量传感器，它们全部集成在顶部的多孔硅膜（2）上 的腔（3）。 具有下面的空腔（3）的多孔硅（2）为传感器元件提供了非常好的热隔离，因此将加热器（4）保持在给定温度所需的功率非常低。 多孔硅膜（2）与下面的腔（3）的形成过程是两步单电化学过程。 这是基于以下事实：当阳极电流相对较低时，我们处于多孔硅形成的状态，而如果该电流超过一定值，则我们变成电解抛光的方式。 该工艺以低电流开始形成多孔硅（2），然后转化为电解抛光条件以形成下面的空腔（3）。 使用所提出的方法描述了各种类型的热传感器装置，例如流量传感器，气体传感器，红外探测器，湿度传感器和热电发电机。 此外，本发明提供了使用与多孔硅（17）和空腔（16）相同的技术形成微流体通道（16）的方法。

公开(公告)号：US07303997B1

公开(公告)日：2007-12-04

申请号：US11544591

申请日：2006-10-10

Applicant: Philips Laou ,  Merel Philippe

Inventor： Philips Laou ,  Merel Philippe

IPC: H01L21/302

CPC classification number: B81C1/00142 ,  B81B2201/0207 ,  B81B2201/0278 ,  B81B2203/0109 ,  G01J5/02 ,  G01J5/024 ,  G01J5/04 ,  G01J5/046 ,  G01J5/20

Abstract: Microbolometers with regionally thinned microbridges are produced by depositing a thin film (0.6 μm) of silicon nitride on a silicon substrate, forming microbridges on the substrate, etching the thin film to define windows in a pixel area, thinning the windows, releasing the silicon nitride, depositing a conductive YBaCuO film on the bridges, depositing a conductive film (Au) on the YBaCuO film, and removing selected areas of the YBaCuO and conductive films.

Abstract translation: 通过在硅衬底上沉积氮化硅薄膜（0.6μm），在衬底上形成微桥，蚀刻薄膜以限定像素区中的窗口，使窗户变薄，释放氮化硅，从而产生具有区域薄化微桥的微伏热计 在桥上沉积导电YBaCuO膜，在YBaCuO膜上沉积导电膜（Au），并去除YBaCuO和导电膜的选定区域。

公开(公告)号：US06835932B2

公开(公告)日：2004-12-28

申请号：US10129338

申请日：2002-05-03

Applicant: Tohru Ishizuya ,  Junji Suzuki

Inventor： Tohru Ishizuya ,  Junji Suzuki

IPC: G01J500

CPC classification number: B81B3/0081 ,  B81B2201/0278 ,  B81B2201/042 ,  B81B2203/0109 ,  G01J5/40 ,  H01L27/14812 ,  H01L27/14818 ,  H01L27/14875

Abstract: A thermal displacement element comprises a substrate, and a supported member supported on the substrate. The supported member includes first and second displacement portions, a heat separating portion exhibiting a high thermal resistance and a radiation absorbing portion receiving the radiation and converting it into heat. Each of the first and second displacement portions has at least two layers of different materials having different expansion coefficients and stacked on each other. The first displacement portion is mechanically continuous to the substrate without through the heat separating portion. The radiation absorbing portion and the second displacement portion are mechanically continuous to the substrate through the heat separating portion and the first displacement portion. The second displacement portion is thermally connected to the radiation absorbing portion. A radiation detecting device comprises a thermal displacement element and a displacement reading member fixed to the second displacement portion of the thermal displacement element and used for obtaining a predetermined change corresponding to a displacement in the second displacement portion.

公开(公告)号：US20040195096A1

公开(公告)日：2004-10-07

申请号：US10485940

申请日：2004-01-30

Inventor： Christos Tsamis ,  Angeliki Tserepi ,  Androula G Nassiopoulou

IPC: G01N027/26

CPC classification number: H05B3/265 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00682 ,  B81C1/0069 ,  B81C2201/0115 ,  G01F1/6845 ,  G01N27/12 ,  G01N27/16 ,  G01N27/18

Abstract: This invention provides a front side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.

Abstract translation: 本发明提供了前桥硅微加工工艺，用于制造桥梁或悬臂形式的悬浮多孔硅膜以及采用这些膜的热传感器装置。 悬浮的多孔硅膜的制造包括以下步骤：（a）在硅衬底（1）的至少一个预定区域中形成多孔硅层（2），（b）蚀刻窗口（5） ）使用标准光刻法和（c）在多孔硅层（2）下方的硅衬底（1）的选择性蚀刻，通过使用干蚀刻技术提供多孔硅膜（2）的多孔硅膜 并在所述多孔硅层下方形成空腔（6）。 此外，本发明提供了一种用于制造基于具有最小热损失的多孔硅膜的热传感器的方法，因为所提出的方法结合了多孔硅的低热导率和悬浮膜的使用所产生的优点。 此外，本发明中提出的前侧微加工工艺简化了制造工艺。 使用所提出的方法来描述各种类型的热传感器装置，例如量热式气体传感器，电导型气体传感器和导热传感器。