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    Accelerometer strain isolator
    42.
    发明授权
    Accelerometer strain isolator 有权

    公开(公告)号：US06634231B2

    公开(公告)日：2003-10-21

    申请号：US10117299

    申请日：2002-04-05

    Applicant: David L. Malametz

    Inventor： David L. Malametz

    IPC: G01P1500

    CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/058 ,  B81C2201/0133 ,  G01P1/006 ,  G01P15/097

    Abstract: An apparatus and method for suspending and strain isolating a structure is provided, the apparatus having a first elongated flexure having first and second ends structured for connection to a support structure, and a second elongated flexure having first and second ends structured for connection to a structure to be isolated from the support structure. A portion of the second flexure intermediate the first and second ends thereof is interconnected to a portion of the first flexure intermediate the first and second ends thereof.

    Silicon bulk-micromachined electromagnetic fiber-optics bypass microswitch
    43.
    发明授权
    Silicon bulk-micromachined electromagnetic fiber-optics bypass microswitch 有权
    硅体微加工电磁光纤旁路微动开关

    公开(公告)号：US06556737B1

    公开(公告)日：2003-04-29

    申请号：US09705416

    申请日：2000-11-02

    Applicant: Denny K. Miu ,  Weilong Tang ,  Viktoria Temesvary ,  Brent E. Burns

    Inventor： Denny K. Miu ,  Weilong Tang ,  Viktoria Temesvary ,  Brent E. Burns

    IPC: G02B642

    CPC classification number: G02B26/0833 ,  B81B2201/047 ,  B81C1/00182 ,  B81C2201/0133 ,  B81C2201/014 ,  G02B6/3518 ,  G02B6/3572 ,  G02B6/3584 ,  G02B26/085

    Abstract: A fiber-optic microswitch is disclosed that includes a flexible mirror positioning structure including an outer fixed frame, a movable platform upon which a mirror is formed, and two or more resilient support members (e.g., monocrystalline silicon springs or torsion beams) connecting the movable platform to the fixed frame. Stationary fibers are mounted over the mirror. An electromagnetic drive mechanism is provided for positioning the movable platform relative to the fixed frame. The electromagnetic drive mechanism includes one or more coils formed on a drive substrate mounted under the monocrystalline structure, and one or more pole pieces that are mounted on the movable platform. Currents are selectively applied to the coils to generate attractive electromagnetic forces that pull the pole pieces, thereby causing the movable platform to move (e.g., tilt) relative to the fixed frame, thereby selectively directing light from one fiber to another. Various monocrystalline structures are disclosed.

    Abstract translation: 公开了一种光纤微型开关，其包括柔性反射镜定位结构，其包括外部固定框架，其上形成有反射镜的可移动平台以及连接可移动的两个或更多个弹性支撑构件（例如，单晶硅弹簧或扭力梁） 平台到固定框架。 固定纤维安装在镜子上。 提供电磁驱动机构用于相对于固定框架定位可移动平台。 电磁驱动机构包括形成在安装在单晶结构下的驱动基板上的一个或多个线圈和安装在可移动平台上的一个或多个极片。 电流被选择性地施加到线圈以产生有吸引力的电磁力，其拉动极片，从而使可移动平台相对于固定框架移动（例如倾斜），从而将光从一个光纤选择性地引导到另一个光纤。 公开了各种单晶结构。

    Method and apparatus for fabricating structures using chemically selective endpoint detection
    45.
    发明申请
    Method and apparatus for fabricating structures using chemically selective endpoint detection 失效

    公开(公告)号：US20030008519A1

    公开(公告)日：2003-01-09

    申请号：US09900300

    申请日：2001-07-05

    Inventor： Jeffrey J. Peterson ,  Charles E. Hunt

    IPC: H01L021/461

    CPC classification number: H01L21/30604 ,  B81C1/00626 ,  B81C2201/0104 ,  B81C2201/0133 ,  H01L21/30608

    Abstract: One embodiment of the present invention provides a process for selective etching during semiconductor manufacturing. The process starts by receiving a silicon substrate with a first layer composed of a first material, which is covered by a second layer composed of a second material. The process then performs a first etching operation that etches some but not all of the second layer, so that a portion of the second layer remains covering the first layer. Next, the system performs a second etching operation to selectively etch through the remaining portion of the second layer using a selective etchant. The etch rate of the selective etchant through the second material is faster than an etch rate of the selective etchant through the first material, so that the second etching operation etches through the remaining portion of the second layer and stops at the first layer.

    Wet and dry etching process on <110> silicon and resulting structures
    46.
    发明申请
    Wet and dry etching process on <110> silicon and resulting structures 审中-公开
    湿法和干法蚀刻工艺在<110>硅和结构上

    公开(公告)号：US20020195417A1

    公开(公告)日：2002-12-26

    申请号：US10124612

    申请日：2002-04-17

    Inventor： Dan A. Steinberg

    IPC: C23F001/00

    CPC classification number: B81C1/00547 ,  B81C2201/0132 ,  B81C2201/0133

    Abstract: A method of producing smooth sidewalls on a micromachined device is described. A portion of the wafer is dry etched, forming a dry etched sidewall. The sidewall is covered with a mask. An area adjacent to the dry etched area is wet etched, forming a wet etched sidewall. The mask may optionally be removed after wet etching. The wafer substrate has a orientation, which allows the wet etched area to have nearly vertical wet etched sidewalls.

    Abstract translation: 描述了在微加工装置上制造平滑侧壁的方法。 干燥蚀刻晶片的一部分，形成干蚀刻的侧壁。 侧壁被掩模覆盖。 与干蚀刻区域相邻的区域被湿蚀刻，形成湿蚀刻侧壁。 湿法蚀刻后可以选择去除掩模。 晶片衬底具有<110>取向，其允许湿蚀刻区域具有几乎垂直的湿蚀刻侧壁。

    Method of etching silicon wafer and silicon wafer
    47.
    发明授权
    Method of etching silicon wafer and silicon wafer 失效
    蚀刻硅晶片和硅晶片的方法

    公开(公告)号：US06284670B1

    公开(公告)日：2001-09-04

    申请号：US09120803

    申请日：1998-07-23

    Applicant: Yoshitsugu Abe ,  Hiroshi Tanaka ,  Atsushi Sakaida ,  Toshihisa Taniguchi ,  Tsuyoshi Fukada

    Inventor： Yoshitsugu Abe ,  Hiroshi Tanaka ,  Atsushi Sakaida ,  Toshihisa Taniguchi ,  Tsuyoshi Fukada

    IPC: H01L213063

    CPC classification number: B81C1/00158 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0114 ,  B81C2201/0133 ,  H01L21/3063

    Abstract: After an Si wafer is anisotropically etched through an etching mask having an opening in an anisotropically etching solution, an etching face of the Si wafer emerged by the anisotropic etching is subjected to anodic oxidation by applying a positive voltage for anodic oxidation on the Si wafer. As a result, the etching face of the Si wafer is isotropically etched due to the anodic oxidation in the anisotropic etching solution. By the isotropic etching thus performed, a sharp corner formed at an end portion of a recess portion formed in the Si wafer by the anisotropic etching, is rounded. Because the isotropic etching reaction progresses very slowly in comparison with the anisotropic etching, control of the etching can be made easy and accurately. As a result, the thickness of the diaphragm can be prevented from being dispersed.

    Abstract translation: 在通过各向异性蚀刻溶液中具有开口的蚀刻掩模对Si晶片进行各向异性蚀刻之后，通过在Si晶片上施加阳极氧化的正电压，通过各向异性蚀刻出现的Si晶片的蚀刻面进行阳极氧化。 结果，由于各向异性蚀刻溶液中的阳极氧化，Si晶片的蚀刻面被各向同性地蚀刻。 通过如此进行的各向同性蚀刻，通过各向异性蚀刻形成在形成在Si晶片中的凹部的端部处形成的尖角变圆。 由于与各向异性蚀刻相比，各向同性蚀刻反应进行得非常缓慢，因此可以容易且精确地控制蚀刻。 结果，可以防止隔膜的厚度分散。

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