公开(公告)号：US06824960B2

公开(公告)日：2004-11-30

申请号：US10373235

申请日：2003-02-24

Applicant: In-Yao Lee ,  Chih-Ching Chen

Inventor： In-Yao Lee ,  Chih-Ching Chen

IPC: G03C500

CPC classification number: B81C1/0042 ,  B01L3/0241 ,  B41J2/16 ,  B41J2/1629 ,  B41J2/1631 ,  B81B2201/052 ,  B81B2203/0392 ,  B81C1/00595 ,  B81C2201/0136

Abstract: A method of manufacturing a fluid injection device. The method of the present invention applies a compensated geometric shape of the unetched isolating portions to increase the additional compensated portion for etching, or the ion implanting process to reduce the etching rate of the unetched isolating portions. Thus, crosstalk or overshoot in the isolating portions of the fluid injection device can be reduced, and the fluid injection device can be precisely manufactured in a small size.

Abstract translation: 一种制造流体注射装置的方法。 本发明的方法应用未蚀刻绝缘部分的补偿几何形状以增加用于蚀刻的附加补偿部分，或离子注入工艺以降低未蚀刻绝缘部分的蚀刻速率。 因此，可以减少流体注入装置的隔离部分中的串扰或过冲，并且能够精确地制造流体注射装置。

公开(公告)号：US06759265B2

公开(公告)日：2004-07-06

申请号：US10268711

申请日：2002-10-10

Applicant: Hans Artmann ,  Thorsten Pannek

Inventor： Hans Artmann ,  Thorsten Pannek

IPC: H01L2100

CPC classification number: B81C1/0069 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0139

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract translation: 在制造具有半导体材料基板的隔膜传感器单元的方法中，产生用于形成用于至少一个传感器的传感器元件结构的隔膜下方的平坦隔膜和隔热绝缘孔。 由限定传感器元件结构的特定区域中的由半导体材料制成的衬底接收与周围半导体材料的故意不同的掺杂，多孔半导体材料是由掺杂区域之间的半导体材料部分和半导体材料 在半导体中的阱区域被多孔化并且在传感器元件结构的部分被去除和/或变得多孔的情况下。

公开(公告)号：US20040053507A1

公开(公告)日：2004-03-18

申请号：US10651051

申请日：2003-08-29

Applicant: FUJITSU LIMITED

Inventor： Shoji Okuda ,  Hiroshi Tokunaga ,  Osamu Tsuboi

IPC: H01L021/461

CPC classification number: B81C1/0019 ,  B81B2201/0271 ,  B81C2201/0136 ,  B81C2201/019

Abstract: The method for fabricating a micro machine comprises the step of burying an oxide film 54 in a first semiconductor substrate 6, the step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation film 18 therebetween, the step of forming a first mask 66 with an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first mask 66 and an oxide film 54 as a mask to thereby form a spring portion 20a integral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second mask 74 with an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second mask 74, and the step of etching the insulation film 18 in the first region and the second region. The thickness of the torsion bar can be easily controlled. Thus, a micro machine having a torsion bar can be fabricated with high yields.

Abstract translation: 微机的制造方法包括在第一半导体基板6中埋入氧化膜54的步骤，将第一半导体基板与绝缘膜18接合在第二半导体基板上的工序，形成第一掩模 66，其在第一区域的开口和第一区域两侧的第二区域，用第一掩模66和氧化物膜54作为掩模蚀刻第一半导体衬底的步骤，从而形成与 在所述氧化膜和所述绝缘膜之间的第一半导体衬底，从而形成包括所述弹簧部分的扭杆，在所述第一区域和所述第二区域中形成具有开口的第二掩模74的步骤，蚀刻所述第二半导体 通过使用第二掩模74的衬底以及蚀刻第一区域和第二区域中的绝缘膜18的步骤。 可以容易地控制扭杆的厚度。 因此，可以以高产率制造具有扭杆的微型机器。

公开(公告)号：US20030110867A1

公开(公告)日：2003-06-19

申请号：US10268711

申请日：2002-10-10

Inventor： Hans Artmann ,  Thorsten Pannek

IPC: G01F001/56

CPC classification number: B81C1/0069 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0139

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract translation: 在制造具有半导体材料基板的隔膜传感器单元的方法中，产生用于形成用于至少一个传感器的传感器元件结构的隔膜下方的平坦隔膜和隔热绝缘孔。 由限定传感器元件结构的特定区域中的由半导体材料制成的衬底接收与周围半导体材料的故意不同的掺杂，多孔半导体材料是由掺杂区域之间的半导体材料部分和半导体材料 在半导体中的阱区域被多孔化并且在传感器元件结构的部分被去除和/或变得多孔的情况下。

公开(公告)号：US06506621B1

公开(公告)日：2003-01-14

申请号：US10016026

申请日：2001-12-12

Applicant: Hans Artmann ,  Thorsten Pannek ,  Robert Siegel

Inventor： Hans Artmann ,  Thorsten Pannek ,  Robert Siegel

IPC: H01L2100

CPC classification number: G01J5/06 ,  B81B3/0081 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01J5/10

Abstract: In a method for producing a diaphragm sensor array having a semiconductor material substrate on which a plurality of planar diaphragm regions is arranged as a carrier layer for sensor elements, the planar diaphragm regions are thermally decoupled from one another by crosspieces made of a material having clearly better heat conductive properties compared to the diaphragm regions and the lateral surroundings of the crosspieces. Masking for a subsequent step for producing porous semiconductor material is applied at the locations of the semiconductor material substrate at which the crosspieces for the thermal decoupling are formed, and the semiconductor regions not protected by the masking are rendered porous and the diaphragm regions are produced thereupon. Instead of using porous silicon, a plasma etching process may be performed from the backside of a semiconductor material substrate. In particular, high integration densities of diaphragm sensors may be achieved with both methods. A diaphragm sensor array is produced by one of the methods.

Abstract translation: 在具有半导体材料基板的膜片传感器阵列的制造方法中，多个平面膜片区域被布置为传感器元件的载体层，平面隔膜区域通过由具有清楚的材料制成的横条而彼此热分离 与隔膜区域和横梁的横向周围相比，具有更好的导热性能。 在用于制造多孔半导体材料的后续步骤中的掩模被应用于半导体材料基板的用于形成用于热解耦的接头的位置处，并且未被掩蔽保护的半导体区域变得多孔，并且在其上产生隔膜区域 。 代替使用多孔硅，可以从半导体材料基板的背面进行等离子体蚀刻工艺。 特别地，可以通过两种方法实现膜片传感器的高集成度。 通过这些方法之一产生膜片传感器阵列。

公开(公告)号：US06389902B2

公开(公告)日：2002-05-21

申请号：US09781798

申请日：2001-02-12

Applicant: Robert Aigner ,  Hans-Jörg Timme ,  Thomas Bever

Inventor： Robert Aigner ,  Hans-Jörg Timme ,  Thomas Bever

IPC: G01L900

CPC classification number: B81C1/00801 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0136 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

Abstract: The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference between the wafer and the epitaxial layer by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.

Abstract translation: 本发明涉及一种微机械传感器及相应的生产方法，包括以下步骤：a）制备掺杂半导体晶片; b）施加掺杂的外延层，使得发生半导体晶片和外延层之间的界面中的电荷载流子密度的跳跃; c）可选地蚀刻穿过外延层的通气孔并且可选地用牺牲材料填充通风孔; d）使用本身已知的技术在外延层的顶侧上沉积至少一个牺牲层，至少一个间隔层，膜和任选的半导体电路，其中半导体电路可以在膜被形成之后施加 同时沉积形成膜所需的层; e）蚀刻传感器后部的孔，其中蚀刻方法被选择为使得蚀刻沿着顶侧的方向前进并且通过改变电荷载流子浓度而在晶片和外延层之间的干涉中停止 。 本发明还涉及在压力传感器或麦克风中利用微机械传感器。

公开(公告)号：US06290510B1

公开(公告)日：2001-09-18

申请号：US09626936

申请日：2000-07-27

Applicant: David Kirtland Fork ,  Jackson Ho ,  Rachel King-ha Lau ,  JengPing Lu

Inventor： David Kirtland Fork ,  Jackson Ho ,  Rachel King-ha Lau ,  JengPing Lu

IPC: H01R909

CPC classification number: G01R1/06716 ,  B81B2203/0118 ,  B81C1/00484 ,  B81C2201/0136 ,  B81C2203/058 ,  G01R1/06727 ,  G01R1/07342 ,  G01R3/00 ,  H01L23/49811 ,  H01L2924/0002 ,  H01R4/48 ,  H01R12/57 ,  H05K3/4092 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/4914 ,  H01L2924/00

Abstract: Efficient methods for lithographically fabricating spring structures onto a substrate containing contact pads or metal vias by forming both the spring metal and release material layers using a single mask. Specifically, a pad of release material is self-aligned to the spring metal finger using a photoresist mask or a plated metal pattern, or using lift-off processing techniques. A release mask is then used to release the spring metal finger while retaining a portion of the release material that secures the anchor portion of the spring metal finger to the substrate. When the release material is electrically conductive (e.g., titanium), this release material portion is positioned directly over the contact pad or metal via, and acts as a conduit to the spring metal finger in the completed spring structure. When the release material is non-conductive, a metal strap is formed to connect the spring metal finger to the contact pad or metal via, and also to further anchor the spring metal finger to the substrate.

Abstract translation: 通过使用单个掩模通过形成弹簧金属和释放材料层来将含有接触垫或金属通孔的弹性结构光刻制造到衬底上的有效方法。 具体地说，使用光致抗蚀剂掩模或电镀金属图案或使用剥离处理技术，释放材料垫与弹簧金属手指自对准。 然后使用释放掩模释放弹簧金属指，同时保持将弹簧金属指的锚固部分固定到基底的释放材料的一部分。 当释放材料是导电的（例如钛）时，该释放材料部分直接位于接触垫或金属通孔上方，并且用作在完成的弹簧结构中的弹簧金属指的导管。 当释放材料不导电时，形成金属带以将弹簧金属指连接到接触垫或金属通孔，并且还将弹簧金属指状物进一步锚定到基底。

公开(公告)号：US5437739A

公开(公告)日：1995-08-01

申请号：US229501

申请日：1994-04-19

Applicant: Kenneth M. Hays

Inventor： Kenneth M. Hays

IPC: C23F1/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/306 ,  H03H3/007 ,  H01L21/302

CPC classification number: G01L9/0019 ,  B81C1/00801 ,  H03H3/007 ,  B81C2201/0136 ,  B81C2201/014 ,  Y10S148/012

Abstract: A dissolved wafer micromachining process is modified by providing an etch control seal around the perimeter of a heavily doped micromechanical structure formed on a substrate. The micromechanical structure is fabricated on a wafer using conventional methods including the formation of a trench that surrounds and defines the shape of the micromechanical structure in the substrate. The etch control seal comprises a portion of the substrate in the form of a raised ring extending around the perimeter of the micromechanical structure and its defining trench. Selected raised areas of the heavily doped micromechanical structure and the top of the raised etch control seal are bonded to a second substrate. A selective etch is then used to dissolve the first substrate so that the heavily doped micromechanical structure remains attached to the second substrate only at the bonded areas. The etch control seal reduces exposure of the micromechanical structure and bonded areas to the etch by preventing the etch from contacting the heavily doped structure until the etch leaks through the dissolving floor of the trench. This occurs only during the final stages of the substrate dissolution step, thus minimizing exposure of the micromechanical structure and bonded areas to the damaging effects of the etch. Use of an etch control seal increases design flexibility and improves micromechanical device yield and quality in a dissolved wafer fabrication process.

Abstract translation: 通过在形成在衬底上的重掺杂微机械结构的周边周围提供蚀刻控制密封来修改溶解的晶片微加工工艺。 使用常规方法在晶片上制造微机械结构，包括形成围绕并限定衬底中的微机械结构的形状的沟槽。 蚀刻控制密封件包括呈微环形结构周边延伸的凸起形状的衬底的一部分及其限定沟槽。 重掺杂的微机械结构的选定凸起区域和凸起的蚀刻控制密封件的顶部被结合到第二衬底。 然后使用选择性蚀刻来溶解第一衬底，使得重掺杂的微机械结构仅在接合区域处保持附着到第二衬底。 蚀刻控制密封件通过防止蚀刻与重掺杂结构接触直到蚀刻泄漏通过沟槽的溶解底板来减少微机械结构和结合区域对蚀刻的暴露。 这仅发生在底物溶解步骤的最后阶段期间，从而最小化微机械结构和结合区域对蚀刻的破坏作用的暴露。 蚀刻控制密封件的使用增加了设计灵活性，并且在溶解的晶片制造工艺中提高了微机械装置的产量和质量。

公开(公告)号：US09934973B2

公开(公告)日：2018-04-03

申请号：US15538564

申请日：2015-12-22

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Stefan Landis ,  Nicolas Posseme ,  Sebastien Barnola ,  Thibaut David ,  Lamia Nouri

IPC: H01L21/266 ,  C23C14/48 ,  C23C14/04 ,  H01L21/3065 ,  H01L21/306 ,  B81C1/00 ,  H01L33/00 ,  H01L33/22 ,  H01L31/18 ,  H01L31/0392 ,  G03F7/00

CPC classification number: H01L21/266 ,  B81C1/00103 ,  B81C1/0046 ,  B81C1/00587 ,  B81C2201/0136 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/042 ,  C23C14/48 ,  G03F7/0002 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L31/02363 ,  H01L31/0392 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  Y02E10/50

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.

公开(公告)号：US20170372904A1

公开(公告)日：2017-12-28

申请号：US15538564

申请日：2015-12-22

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Stephan LANDIS ,  Nicolas POSSEME ,  Sebastien BARNOLA ,  Thibaut DAVID ,  Lamia NOURI

IPC: H01L21/266 ,  C23C14/04 ,  C23C14/48 ,  H01L21/306 ,  H01L21/3065 ,  H01L33/22 ,  G03F7/00 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  B81C1/00

CPC classification number: H01L21/266 ,  B81C1/00103 ,  B81C1/0046 ,  B81C1/00587 ,  B81C2201/0136 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/042 ,  C23C14/48 ,  G03F7/0002 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L31/02363 ,  H01L31/0392 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  Y02E10/50

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.